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M29W040B55N1

STMicroelectronics

M29W040B55N1 by STMicroelectronics

M29W040B55N1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and 55 ns max access time. It supports up to 100K write/erase cycles, ideal for embedded applications. Its compact SOIC package ensures efficient space utilization in designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Chip Stock

USA . 16,200 parts In-Stock

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Vyrian

USA . 2,270 parts In-Stock

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2,270

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Digiode

USA . 2,190 parts In-Stock

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Anansix

USA . 1,545 parts In-Stock

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DF Sales Co.

USA . 6 parts In-Stock

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DF Sales Co.

USA . 6 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 163 parts In-Stock

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$2.360

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$2.124

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163

$2.360

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$2.124

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MKK Technologies

India . 2,006 parts In-Stock

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$4.437

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2,006

$4.437

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DigiPath Technology Company

USA . 2,006 parts In-Stock

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$4.437

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$4.437

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AZTECH Wire

Italy . 1,155 parts In-Stock

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$19.250

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$19.250

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Component Stockers USA

USA . 574 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 27,651 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,335 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,890 parts In-Stock

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Microchip USA

USA . 4,520 parts In-Stock

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Kepictronics

USA . 3,988 parts In-Stock

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Corphita

USA . 3,954 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Metaverse IC Inc.

Canada . 2,680 parts In-Stock

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Assy Fe

Spain . 1,014 parts In-Stock

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Parana Technologies

USA . 532 parts In-Stock

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$2.822

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532

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Perfect Parts

USA . 133 parts In-Stock

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Overview

Unlock unparalleled performance with the M29W040B55N1 flash memory from STMicroelectronics, a leader in innovative semiconductor solutions. Designed for reliability and efficiency, this compact memory offers exceptional endurance and swift data access, making it perfect for a wide range of applications—from consumer electronics to industrial systems. Experience the quality and support of a trusted manufacturer while enhancing your projects with this powerful yet efficient memory solution.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures reliability and longevity of the product.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient use of space on printed circuit boards.

Package Shape: RECTANGULAR

The rectangular shape offers efficient layout and orientation flexibility in electronic designs.

Operating Mode: ASYNCHRONOUS

Asynchronous operation provides faster data access times, enhancing overall system performance.

Nominal Supply Voltage / Vsup: 3.3 V

Operating at 3.3 V aligns with common voltage levels, making integration with other components straightforward.

Power Supplies (V): 3

Supports a stable power supply requirement, ensuring consistent performance across various applications.

No. of Terminals: 32

The 32-terminal configuration allows for extensive connectivity options, enhancing versatility.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

A thin profile design maximizes space efficiency in compact electronic devices and systems.

Maximum Operating Temperature: 70 °C

A high maximum operating temperature rating ensures reliable functionality in diverse environments.

Organization: 512KX8

This organization scheme provides a balance between storage capacity and access speed, ideal for many applications.

Minimum Operating Temperature: 0 °C

The ability to function from 0° allows deployment in various temperature-sensitive applications.

No. of Sectors/Size: 8

Having multiple sectors allows for more efficient memory management and data organization.

Terminal Finish: TIN LEAD

Tin-lead finish provides good solderability and long-term reliability in connections.

Terminal Position: DUAL

Dual terminal positioning enables more flexible mounting options in designs.

Maximum Seated Height: 1.2 mm

A low seated height helps reduce the overall height of the assembly, important for space-constrained designs.

Width: 8 mm

With a width of 8 mm, the product provides a compact form factor conducive to space-sensitive applications.

Minimum Supply Voltage (Vsup): 3 V

This makes it compatible with a wider range of power sources and 3.3 V systems.

Type: NOR TYPE

NOR flash offers fast random access capabilities, enhancing performance in read-intensive applications.

Length: 18.4 mm

The 18.4 mm length enhances compatibility with standard board designs while maintaining compactness.

Programming Voltage (V): 3

Operating at a lower voltage for programming helps protect sensitive components from damage.

Temperature Grade: COMMERCIAL

Designed for commercial use, ensuring adequate performance in a wide range of consumer electronics.

Technology: CMOS

CMOS technology improves power efficiency and performance, making it ideal for portable devices.

Parallel or Serial: PARALLEL

Parallel configurations allow for faster data transfer rates versus serial counterparts, enhancing throughput.

Terminal Form: GULL WING

Gull wing terminals facilitate ease of soldering and improve board layout possibilities.

Sector Size (Words): 64K

Having 64K word sector sizes increases the efficiency of read and write operations.

Maximum Supply Current: 20 mA

Low supply current minimizes power consumption, making it suitable for battery-operated devices.

No. of Words: 524288 words

With 524288 words, the product offers sufficient capacity for many applications, ensuring data storage flexibility.

Toggle Bit: YES

Support for toggle bit enhances memory management and simplifies programming operations.

Memory Width: 8

An 8-bit memory width provides a good balance between performance and complexity in data processing.

Terminal Pitch: 0.5 mm

A fine terminal pitch allows for high-density interconnections on compact PCBs.

No. of Words Code: 512K

The 512K word code ensures efficiency and flexibility in memory allocation across various applications.

Command User Interface: YES

A user command interface simplifies integration and operational control within larger systems.

Maximum Supply Voltage (Vsup): 3.6 V

The maximum voltage rating offers a range suitable for standard electronic supply voltages.

Endurance: 100,000 Write/Erase Cycles

High endurance ensures long-term usability for applications requiring frequent updates to stored data.

Memory Density: 4194304 bit

Multi-bit density makes this memory an excellent choice for storage-intensive applications.

Memory IC Type: FLASH

Being a flash memory type provides non-volatile storage, ensuring data retention without power.

Maximum Standby Current: 0.0001 Amp

Very low standby current helps in reducing overall power consumption, prolonging battery life in portable devices.

Maximum Access Time: 55 ns

Fast access time improves performance during read operations, essential for responsive applications.

Data Polling: YES

Data polling capability allows for effective data management and error detection in memory operations.

Technical Specifications

Flash Memory M29W040B55N1 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G32

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

4194304 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

8

No. of Terminals:

32

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

512KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP32,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

3

Programming Voltage (V):

3

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sector Size (Words):

64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

8 mm

Trade Compliance

M29W040B55N1 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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