Loading...

M29F800DB55N6

STMicroelectronics

M29F800DB55N6 by STMicroelectronics

M29F800DB55N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 55ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,279

-

-

-

-

Digiode

USA . 3,646 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,646

-

-

-

-

Anansix

USA . 1,970 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,970

-

-

-

-

J2 Sourcing AB

Sweden . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Prism Electronics

USA . 7 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,356 parts In-Stock

1+ parts

$3.234

100+ parts

-

1k+ parts

$2.910

10k+ parts

-

2,356

$3.234

-

$2.910

-

MKK Technologies

India . 1,133 parts In-Stock

1+ parts

$6.081

100+ parts

-

1k+ parts

-

10k+ parts

-

1,133

$6.081

-

-

-

DigiPath Technology Company

USA . 1,133 parts In-Stock

1+ parts

$6.081

100+ parts

-

1k+ parts

-

10k+ parts

-

1,133

$6.081

-

-

-

AZTECH Wire

Italy . 353 parts In-Stock

1+ parts

$19.020

100+ parts

-

1k+ parts

-

10k+ parts

-

353

$19.020

-

-

-

Corphita

USA . 4,214 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,214

-

-

-

-

Parana Technologies

USA . 2,300 parts In-Stock

1+ parts

-

100+ parts

$3.866

1k+ parts

-

10k+ parts

-

2,300

-

$3.866

-

-

Microchip USA

USA . 401 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

401

-

-

-

-

Perfect Parts

USA . 8 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8

-

-

-

-

Overview

Unlock the power of innovation with the M29F800DB55N6 Flash Memory from STMicroelectronics. Renowned for their commitment to quality and reliability, STMicroelectronics delivers a memory solution that excels in performance across various applications, from industrial controls to consumer electronics. With its compact design and robust features, this NOR Flash memory ensures rapid data access and exceptional durability, empowering your projects with seamless efficiency and long-lasting value. Trust in STMicroelectronics to elevate your technology to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and longevity, making the product suitable for a wide range of applications.

Surface Mount: YES

Surface mount capability allows for compact design and efficient use of PCB space.

Package Shape: RECTANGULAR

The rectangular package design optimizes space on circuit boards, facilitating easier integration.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances the speed of data access, improving overall system performance.

Nominal Supply Voltage / Vsup (V): 5

Standard 5V supply voltage is widely compatible with various systems, ensuring easy integration.

Power Supplies (V): 5

Single voltage power supply simplifies design and reduces component count.

No. of Terminals: 48

A higher number of terminals facilitates more data lines and better connectivity options.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

The thin profile design is advantageous for space-constrained applications.

Alternate Memory Width: 8

Supports various memory interfacing options, making it flexible for different applications.

Maximum Operating Temperature: 85 °C

High operating temperature rating makes it suitable for industrial applications and environments.

Organization: 512KX16

Provides a good balance of capacity and speed, suitable for a variety of uses.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for reliable operation in extreme conditions.

No. of Sectors/Size: 1,2,1,15

Flexible sector sizes allow for efficient memory utilization and data storage.

Terminal Finish: TIN LEAD

Tin lead finish provides excellent solderability and reliability in connections.

Terminal Position: DUAL

Dual terminal position enhances the mounting stability and performance of the memory device.

Maximum Seated Height: 1.2 mm

The low height of the component is ideal for thin electronic designs.

Width: 12 mm

Compact width ensures efficient use of PCB space in various applications.

Minimum Supply Voltage (Vsup): 4.5 V

Allows for operation in lower voltage applications, making it versatile.

Type: NOR TYPE

NOR flash memory allows for fast reads and reliable data retention.

Common Flash Interface: YES

Compatibility with common flash interfaces simplifies integration with existing systems.

Length: 18.4 mm

Compact length contributes to space efficiency on printed circuit boards.

Programming Voltage (V): 5

Standard programming voltage makes it user-friendly for many applications.

Temperature Grade: INDUSTRIAL

Industrial temperature rating ensures the component performs reliably in harsh conditions.

Technology: CMOS

CMOS technology not only reduces power consumption but also enhances performance.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data transfer rates compared to serial interfaces.

Terminal Form: GULL WING

Gull wing terminals improve soldering reliability and mechanical strength.

Sector Size (Words): 16K,8K,32K,64K

Multiple sector sizes provide flexibility in how memory can be utilized and organized.

Maximum Supply Current: 20 mA

Low supply current requirement is beneficial for power-sensitive applications.

No. of Words: 524288 words

Ample storage capacity meets the needs of many embedded applications.

Toggle Bit: YES

Toggle bit functionality aids in data integrity checking during operations.

Memory Width: 16

16-bit memory width allows for efficient data processing and storage.

Terminal Pitch: 0.5 mm

Fine pitch terminals support high-density PCB designs.

No. of Words Code: 512K

512K code capacity provides a substantial amount of storage for applications.

Command User Interface: YES

User-friendly command interface simplifies programming and control.

Ready or Busy: YES

This feature indicates memory status, enhancing operational efficiency.

Maximum Supply Voltage (Vsup): 5.5 V

Allows for compatibility with a range of applications without exceeding voltage thresholds.

Boot Block: BOTTOM

Bottom boot block configuration enhances booting processes in embedded systems.

Memory Density: 8388608 bit

High density provides ample storage, ideal for data-intensive applications.

Memory IC Type: FLASH

Flash memory technology is non-volatile, ensuring data retention without power.

Maximum Standby Current: 0.00015 Amp

Very low standby current reduces power consumption, making it suitable for battery-operated devices.

Maximum Access Time: 55 ns

Fast access time enhances system performance, allowing quicker data retrieval.

Data Polling: YES

Data polling capability enhances error detection and reliability during data operations.

Technical Specifications

Flash Memory M29F800DB55N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

55 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DB55N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20