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M29F002BB70K6E

STMicroelectronics

M29F002BB70K6E by STMicroelectronics

M29F002BB70K6E from STMicroelectronics is a NOR flash memory with a 5V supply, featuring 256K x 8 organization and an industrial temperature range of -40 °C to 85 °C. It supports asynchronous operation and offers up to 100,000 write/erase cycles. Ideal for embedded applications requiring reliable data storage.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 7,255 parts In-Stock

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Anansix

USA . 2,751 parts In-Stock

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2,751

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Digiode

USA . 560 parts In-Stock

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560

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 989 parts In-Stock

1+ parts

$4.048

100+ parts

-

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$3.643

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989

$4.048

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$3.643

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MKK Technologies

India . 1,538 parts In-Stock

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$7.612

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$7.612

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DigiPath Technology Company

USA . 1,538 parts In-Stock

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$7.612

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1,538

$7.612

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AZTECH Wire

Italy . 1,147 parts In-Stock

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$20.080

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1,147

$20.080

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Component Stockers USA

USA . 718 parts In-Stock

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$99.990

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718

$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 26,485 parts In-Stock

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Kepictronics

USA . 18,680 parts In-Stock

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18,680

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Microchip USA

USA . 3,086 parts In-Stock

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3,086

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Parana Technologies

USA . 1,859 parts In-Stock

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$4.840

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1,859

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$4.840

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Corphita

USA . 1,341 parts In-Stock

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1,341

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Overview

Unlock unparalleled performance with the M29F002BB70K6E from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality flash memory offers exceptional reliability across diverse applications, from automotive to industrial controls. With robust endurance and efficient operation, it ensures your devices run smoothly under any conditions. Choose ST for cutting-edge technology that empowers your projects and elevates your designs. Experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy materials ensures reliability and protection against environmental factors.

Surface Mount: YES

Surface mount technology allows for compact design, making it suitable for modern electronic devices where space is limited.

Package Shape: RECTANGULAR

The rectangular shape is efficient for integration into various circuit layouts, optimizing space usage.

Operating Mode: ASYNCHRONOUS

Asynchronous operation enhances data access speeds, improving overall performance of the memory device.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage of 5V ensures compatibility with a wide range of systems and simplifies power design.

Power Supplies (V): 5

This power requirement is widely supported in many electronic systems, making integration straightforward.

No. of Terminals: 32

A higher number of terminals facilitates better connectivity options and data handling capabilities.

Package Style (Meter): CHIP CARRIER

Chip carrier packaging provides robust mechanical support and thermal management, enhancing reliability.

Maximum Operating Temperature: 85 °C

The ability to operate at high temperatures makes this product suitable for industrial applications where heat resistance is crucial.

Organization: 256KX8

This organization allows efficient data storage and retrieval, accommodating a versatile range of applications.

Minimum Operating Temperature: -40 °C

With a low operating temperature range, this memory is suitable for harsh environments, making it ideal for industrial use.

No. of Sectors/Size: 1,2,1,3

Flexible sector sizing allows for optimized data allocation and efficient memory management.

Terminal Finish: TIN

Tin finishes provide good solderability and corrosion resistance, ensuring long-term reliability.

Terminal Position: QUAD

Quad terminal positioning enhances connectivity options, resulting in improved electrical performance.

Maximum Seated Height: 3.56 mm

A low profile height is advantageous for compact designs, reducing overall device thickness.

Width: 11.43 mm

The width is optimized for standard circuit board layouts, promoting ease of integration.

Minimum Supply Voltage (Vsup): 4.5 V

Having a low minimum voltage allows for more flexibility in power supply design.

Type: NOR TYPE

NOR type memory offers fast read access times and is ideal for applications requiring frequent data retrieval.

Length: 13.97 mm

This length fits well within standard chip dimensions, enhancing compatibility with existing circuitry.

Programming Voltage (V): 5

Standard programming voltage simplifies the integration with existing systems, reducing engineering complexity.

Temperature Grade: INDUSTRIAL

Designed for industrial grade environments, ensuring durability and reliability in demanding conditions.

Technology: CMOS

CMOS technology is power-efficient and enables faster switching speeds, improving performance.

Parallel or Serial: PARALLEL

Parallel interface allows for faster data throughput, ideal for applications needing high-performance memory.

Terminal Form: J BEND

J bend terminals provide robust mechanical support for secure connections during assembly.

Sector Size (Words): 16K,8K,32K,64K

Versatile sector sizes enable adaptable storage solutions, allowing for tailored application support.

Maximum Supply Current: 20 mA

Low current requirements enhance power efficiency, making it suitable for battery-operated devices.

No. of Words: 262144 words

A sizable word count allows for considerable data storage capacity, catering to varied application needs.

Toggle Bit: YES

Allows for easy status monitoring, enhancing usability in diagnostic and debugging scenarios.

Memory Width: 8

An 8-bit memory width balances performance with efficiency, suitable for a variety of applications.

Terminal Pitch: 1.27 mm

A standard terminal pitch simplifies PCB design and assembly processes, promoting reuse of existing footprints.

No. of Words Code: 256K

Supports a substantial amount of data, making it ample for applications requiring significant memory space.

Command User Interface: YES

A user-friendly command interface enhances accessibility, making it easier for developers to implement features.

Maximum Supply Voltage (Vsup): 5.5 V

This flexibility in voltage allows for broader compatibility with various power supply designs.

Endurance: 100000 Write/Erase Cycles

High endurance levels ensure longevity and reliability, ideal for applications requiring frequent data updates.

Boot Block: BOTTOM

Boot block configuration allows easy access to critical firmware, enhancing system boot-up processes.

Memory Density: 2097152 bit

A high memory density offers ample storage for complex applications, accommodating large data sets.

Memory IC Type: FLASH

Flash memory is non-volatile, retaining data without power, making it ideal for persistent storage solutions.

Maximum Standby Current: 0.0001 Amp

Very low standby current enhances overall energy efficiency and is vital for power-sensitive applications.

Maximum Access Time: 70 ns

Fast access times improve overall system responsiveness, making this memory suitable for high-performance applications.

Data Polling: YES

Data polling capability allows for real-time monitoring during operations, enhancing reliability and feedback.

Technical Specifications

Flash Memory M29F002BB70K6E attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Boot Block:

BOTTOM

Command User Interface:

YES

Data Polling:

YES

Endurance:

100000 Write/Erase Cycles

JESD-30 Code:

R-PQCC-J32

JESD-609 Code:

e3

Length:

13.97 mm

Memory Density:

2097152 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Sectors/Size:

1,2,1,3

No. of Terminals:

32

No. of Words:

262144 words

No. of Words Code:

256K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC32,.5X.6

Package Shape:

Package Style (Meter):

CHIP CARRIER

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

3.56 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.0001 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

J BEND

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Toggle Bit:

YES

Type:

NOR TYPE

Width:

11.43 mm

Trade Compliance

M29F002BB70K6E Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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