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M29F800DB70N6

STMicroelectronics

M29F800DB70N6 by STMicroelectronics

M29F800DB70N6 from STMicroelectronics is a 5V NOR Flash memory with a density of 8Mbit and an access time of 70ns. It features a dual terminal design in a thin profile package, ideal for industrial applications. Operating b/w -40 °C to 85°C, it ensures reliability in harsh environments.

Median Price

$11.540

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 12 parts In-Stock

1+ parts

$11.540

100+ parts

$8.650

1k+ parts

$7.500

10k+ parts

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12

$11.540

$8.650

$7.500

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Chip Stock

USA . 13,200 parts In-Stock

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Vyrian

USA . 7,070 parts In-Stock

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7,070

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Anansix

USA . 1,775 parts In-Stock

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1,775

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Q Components

USA . 162 parts In-Stock

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162

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ComSIT Distribution GmbH

Germany . 146 parts In-Stock

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146

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Digiode

USA . 58 parts In-Stock

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58

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Semi Source

USA . 9 parts In-Stock

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9

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PC Components Company LLC

USA . 4 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,990 parts In-Stock

1+ parts

$3.050

100+ parts

-

1k+ parts

$2.745

10k+ parts

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1,990

$3.050

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$2.745

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MKK Technologies

India . 1,290 parts In-Stock

1+ parts

$5.735

100+ parts

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1,290

$5.735

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DigiPath Technology Company

USA . 1,290 parts In-Stock

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$5.735

100+ parts

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1,290

$5.735

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AZTECH Wire

Italy . 189 parts In-Stock

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$20.940

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189

$20.940

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Corphita

USA . 3,385 parts In-Stock

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3,385

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Parana Technologies

USA . 1,513 parts In-Stock

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$3.646

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1,513

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$3.646

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Microchip USA

USA . 229 parts In-Stock

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229

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Overview

Unlock unparalleled performance with the M29F800DB70N6 Flash Memory from STMicroelectronics, a trusted name in innovation and quality. Designed for diverse applications, this asynchronous NOR flash memory ensures reliable data retention even under extreme conditions, boasting a robust operating range. Experience efficient, high-speed access with minimal power consumption—ideal for industrial devices, automotive systems, and beyond. Elevate your projects with ST’s commitment to excellence and cutting-edge technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight, this material enhances reliability in various applications.

Surface Mount: YES

Allows for easy integration into modern, space-saving electronic designs.

Package Shape: RECTANGULAR

Standard shape for better compatibility with circuit boards.

Operating Mode: ASYNCHRONOUS

Enables faster data access and improved performance in operations.

Nominal Supply Voltage / Vsup: 5V

Common voltage level ensures easy compatibility with a wide range of devices.

Power Supplies (V): 5

Single voltage supply simplifies the design, reducing costs and complexity.

No. of Terminals: 48

Provides ample connections for various functionalities and interfaces.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact design is ideal for high-density applications, saving space on PCBs.

Alternate Memory Width: 8

Supports flexible memory configurations for different application needs.

Maximum Operating Temperature: 85 °C

Durable operation at high temperatures makes it suitable for industrial environments.

Organization: 512KX16

Efficient data organization that ensures quick access and retrieval.

Minimum Operating Temperature: -40 °C

Designed for extreme conditions, ensuring reliability in harsh environments.

No. of Sectors/Size: 1,2,1,15

Flexible sector size allocation allows for optimized data storage and retrieval.

Terminal Finish: TIN LEAD

Ensures good solderability and improves reliability in solder joints.

Terminal Position: DUAL

Facilitates easier mounting options and better layout flexibility.

Maximum Seated Height: 1.2 mm

Ultra-low profile is beneficial for compact device design.

Width: 12 mm

Provides a good balance of size and performance, suitable for various applications.

Minimum Supply Voltage (Vsup): 4.5V

Offers flexibility in power supply options, accommodating various device needs.

Type: NOR TYPE

Ideal for random access applications, offering faster read speeds.

Common Flash Interface: YES

Standard interface ensures wider compatibility and easier integration.

Length: 18.4 mm

Compact size aids in fitting into small electronic devices without compromise.

Programming Voltage (V): 5

Simplified programming requirements lead to easier circuit design.

Temperature Grade: INDUSTRIAL

Designed to operate reliably in demanding environments, ensuring longevity.

Technology: CMOS

Energy-efficient technology makes it suitable for battery-powered devices.

Parallel or Serial: PARALLEL

Faster data throughput compared to serial interfaces, improving overall performance.

Terminal Form: GULL WING

Provides excellent surface contact for enhanced connectivity and reliability.

Sector Size (Words): 16K,8K,32K,64K

Versatile sector size options for efficient memory allocation and usage.

Maximum Supply Current: 20 mA

Low power consumption makes it energy-efficient, ideal for portable devices.

No. of Words: 524288 words

Substantial storage capacity for a variety of applications.

Toggle Bit: YES

Enables easier monitoring of the memory status, improving user experience.

Memory Width: 16

Supports wider data paths for improved data transfer rates.

Terminal Pitch: 0.5 mm

Allows for denser layouts on PCBs, maximizing board space.

No. of Words Code: 512K

Offers efficient storage for diverse applications requiring significant memory.

Command User Interface: YES

User-friendly interface simplifies the control and operation of the memory.

Ready or Busy: YES

Indicates the memory status, allowing for efficient data handling and operations.

Maximum Supply Voltage (Vsup): 5.5V

Provides a buffer for varying supply voltage levels ensuring robust operation.

Boot Block: BOTTOM

Efficient memory organization for booting applications enhances system startup times.

Memory Density: 8388608 bit

High density storage meets modern application needs for data management.

Memory IC Type: FLASH

Non-volatile memory type ensures data retention even without power supply.

Maximum Standby Current: 0.00015 Amp

Minimal standby current prolongs battery life in portable applications.

Maximum Access Time: 70 ns

Quick access times enhance system performance in demanding applications.

Data Polling: YES

Enables efficient data verification methods, improving the reliability of operations.

Technical Specifications

Flash Memory M29F800DB70N6 attributes and parameters. Explore more Flash Memory devices from STMicroelectronics

Specs

Maximum Access Time:

70 ns

Additional Features:

BOTTOM BOOT BLOCK

Alternate Memory Width:

8

Boot Block:

BOTTOM

Command User Interface:

YES

Common Flash Interface:

YES

Data Polling:

YES

JESD-30 Code:

R-PDSO-G48

JESD-609 Code:

e0

Length:

18.4 mm

Memory Density:

8388608 bit

Memory IC Type:

Memory Width:

16

No. of Functions:

1

No. of Sectors/Size:

1,2,1,15

No. of Terminals:

48

No. of Words:

524288 words

No. of Words Code:

512K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

512KX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP48,.8,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Parallel or Serial:

PARALLEL

Power Supplies (V):

5

Programming Voltage (V):

5

Qualification:

Not Qualified

Ready or Busy:

YES

Maximum Seated Height:

1.2 mm

Sector Size (Words):

16K,8K,32K,64K

Maximum Standby Current:

.00015 Amp

Sub-Category:

Flash Memories

Maximum Supply Current:

20 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Toggle Bit:

YES

Type:

NOR TYPE

Width:

12 mm

Trade Compliance

M29F800DB70N6 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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