Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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STGD6NC60HT4
STMicroelectronics
STGD6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, 15A collector current, and operates at up to 150 °C. Ideal for applications requiring fast switching and high power dissipation.
15 A
600 V
SINGLE
5.75 V
20 V
TO-252
R-PSSO-G2
e3
1
2
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
N-CHANNEL
56 W
Not Qualified
Insulated Gate BIP Transistors
YES
MATTE TIN
GULL WING
POWER CONTROL
SILICON
222 ns
17.3 ns
STGF14NC60KD
STGF14NC60KD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 11A max collector current, and 25W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 340ns.
ULTRA FAST
ISOLATED
11 A
SINGLE WITH BUILT-IN DIODE
7 V
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
25 W
NO
THROUGH-HOLE
340 ns
31.5 ns
STGW35HF60W
STGW35HF60W from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 200 W power dissipation, and operates at up to 150 °C. Ideal for high-performance switching in industrial systems.
LOW CONDUCTION LOSS
60 A
TO-247
200 W
Matte Tin (Sn)
295 ns
45 ns
STGP30NC60W
STGP30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 60 A collector current, and fast switching times (ton: 42.5 ns, toff: 189 ns). Its robust design supports high power dissipation up to 200 W at temperatures up to 150 °C.
MOTOR CONTROL
189 ns
42.5 ns
STGW30NC60W
STGW30NC60W from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, power dissipation of 200 W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various systems.
TO-247AC
STGB6NC60HDT4
STGB6NC60HDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 15A max collector current, and 56W max power dissipation. Ideal for power control applications due to its fast turn-off time of 222ns and built-in diode configuration. Suitable for surface mount with a small outline package style.
245
30
STGW39NC60VD
STGW39NC60VD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 70A max collector current, and 250W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 366ns.
70 A
250 W
TIN
366 ns
46 ns
STGP10NC60H
STGP10NC60H from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, a power dissipation of 60 W, and fast switching times (ton: 19 ns, toff: 247 ns). Ideal for high-temperature environments with a max operating temp of 150 °C.
20 A
60 W
247 ns
19 ns
NGB8204NT4G
Onsemi
NGB8204NT4G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
COLLECTOR
18 A
430 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
15000 ns
1.9 V
18 V
175 Cel
260
115 W
7000 ns
AUTOMOTIVE IGNITION
13000 ns
5200 ns
FD200R65KF2-K
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3800 W; Maximum Collector Current (IC): 1000 A; Maximum VCEsat: 4.9 V;
1000 A
6300 V
R-XUFM-X7
7
UNSPECIFIED
NOT SPECIFIED
3800 W
UPPER
6500 ns
1120 ns
4.9 V
STGIPL14K60
STGIPL14K60 by STMicroelectronics is an N-CHANNEL IGBT with 600V VCEsat, 2.5V max, and 14A IC. Ideal for MOTOR CONTROL applications, it has a turn-off time of 425ns and operates up to 125°C. Package: PLASTIC/EPOXY, RECTANGULAR shape with 38 terminals in THROUGH-HOLE form.
14 A
COMPLEX
R-PDIP-T38
6
38
125 Cel
IN-LINE
44 W
DUAL
425 ns
400 ns
2.5 V
STGW40N120KD
STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
80 A
1200 V
6.5 V
25 V
240 W
564 ns
83 ns
IKD04N60R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 8 A; Peak Reflow Temperature (C): 260;
8 A
5.7 V
75 W
342 ns
20 ns
STGW35NB60SD
STGW35NB60SD from STMicroelectronics is a powerful N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600 V, 70 A collector current, and a turn-off time of just 3600 ns. This robust device operates efficiently up to 150 °C.
5 V
TO-247AA
3600 ns
153 ns
APTGF150H120G
Microsemi
APTGF150H120G by Microsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. Ideal for motor control applications, it offers a max VCEsat of 3.7V and can handle up to 200A of collector current. With a max operating temperature of 150°C, this IGBT has a built-in diode and nominal turn-off time of 390ns.
200 A
BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X12
e1
4
12
961 W
TIN SILVER COPPER
390 ns
190 ns
3.7 V
FD1600/1200R17KF6C_B2
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 2600 A; Package Body Material: UNSPECIFIED; Transistor Element Material: SILICON;
2600 A
1700 V
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X9
9
360 ns
490 ns
FZ1800R17HP4_B29
FZ1800R17HP4_B29 by Infineon Technologies is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector Current (IC) of 1800A and Max Collector-Emitter Voltage of 1700V. Its complex configuration and high power dissipation make it suitable for demanding industrial environments.
1800 A
R-XUFM-X5
5
13000 W
1860 ns
880 ns
2.25 V
MGD623S
Sanken Electric
The Sanken Electric MGD623S is an N-CHANNEL IGBT transistor with a max voltage of 600V and current of 50A. It has a turn-off time of 420ns and turn-on time of 175ns, making it ideal for power control applications. The package style is flange mount with a plastic/epoxy body material.
50 A
420 ns
175 ns
STGB35N35LZ-1
STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.
VOLTAGE CLAMPING
40 A
380 V
2.3 V
12 V
TO-262AA
R-PSIP-T3
176 W
37000 ns
7600 ns
STGB35N35LZT4
STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.
TO-263AA
R-PDSO-G2
STGP35N35LZ
STGP35N35LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Ideal for high-performance switching in industrial systems.
STGF19NC60HD
STGF19NC60HD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 600V, a turn-off time of 272ns, and handles up to 16A current. Ideal for applications in industrial motor drives and power converters.
16 A
35 W
272 ns
32 ns
STGB6NC60HT4
STGB6NC60HT4 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600V, 15A collector current, and fast switching times (toff: 222ns, ton: 17.3ns). Ideal for compact designs with its surface mount configuration.
FGB3040G2-F085
FGB3040G2-F085 by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 150 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 390 V, such as power electronics and motor control systems.
41 A
390 V
2.2 V
150 W
Matte Tin (Sn) - annealed
FGB3440G2-F085
FGB3440G2-F085 by Onsemi is an N-CHANNEL IGBT with 26.9A IC, 390V VCE, and 166W power dissipation. Ideal for applications requiring high power handling and temperature resistance up to 175°C. Suitable for surface mount assembly with a rise time of 7000ns and fall time of 15000ns.
26.9 A
166 W
FGH60N60SMD-F085
FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
120 A
6 V
TO-247AB
600 W
AEC-Q101
60 ns
139 ns
66 ns
FGH60T65SHD-F155
FGH60T65SHD-F155 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. It has a toff of 165ns, ton of 85ns, and can operate at temperatures ranging from -55°C to 175°C.
RC-IGBT
650 V
7.5 V
-55 Cel
349 W
165 ns
85 ns
2.1 V
NXH100B120H3Q0PTG
NXH100B120H3Q0PTG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X22
22
-40 Cel
186 W
291 ns
61 ns
NXH100B120H3Q0SG
NXH100B120H3Q0SG by Onsemi is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a VCEsat of 2.3V, IC of 50A, and Pmax of 186W. Ideal for power control applications due to its fast ton of 61ns and toff of 291ns at temperatures ranging from -40 °C to +150°C.
NXH100B120H3Q0STG
NXH100B120H3Q0STG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
RGS30TSX2DGC11
ROHM
ROHM's RGS30TSX2DGC11 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 30A, and VGE(th) of 7V. Ideal for POWER CONTROL applications due to its fast turn-off time (toff) of 189ns and turn-on time (ton) of 39ns. Operates in temperatures ranging from -40°C to 175°C.
30 A
30 V
39 ns
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
6.4 V
375 W
196.4 ns
73.6 ns
NXH400N100H4Q2F2PG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 959 W; Maximum Collector Current (IC): 409 A; Maximum Gate-Emitter Threshold Voltage: 6.1 V;
409 A
1000 V
6.1 V
R-XUFM-X42
42
959 W
619 ns
186 ns
NXH400N100H4Q2F2SG
NXH400N100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 959W power dissipation, and 409A collector current. Ideal for POWER CONTROL applications due to its fast turn-off time of 619ns and high operating temperature range (-40 °C to 175°C).
STGSB200M65DF2AG
STGSB200M65DF2AG from STMicroelectronics is a high-performance N-channel IGBT designed for power control applications. It features a max VCEsat of 2.05V, supports up to 216A collector current, and operates in temperatures from -55 °C to 175 °C. Its compact surface mount design ensures efficient thermal management and reliability.
216 A
R-PDSO-G9
714 W
AEC-Q101; UL RECOGNIZED
412.6 ns
193.6 ns
2.05 V
AOTF15B65M2
Alpha & Omega Semiconductor
AOTF15B65M2 by Alpha & Omega Semiconductor is an N-CHANNEL IGBT with VCEsat of 2.15V, IC of 30A, and toff of 108ns. Ideal for power control applications due to its single configuration with built-in diode and max operating temperature of 150°C.
36 W
108 ns
33 ns
2.15 V
AFGHL25T120RHD
AFGHL25T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 219ns. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.
48 A
7.3 V
261 W
219 ns
43 ns
2.4 V
AFGHL40T120RHD
AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.
400 W
230 ns
AFGHL40T120RLD
AFGHL40T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 529W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.
529 W
276 ns
80 ns
AFGHL30T65RQDN
AFGHL30T65RQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.82V and a max IC of 42A. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175 °C, it offers high power dissipation up to 230.8W in a rectangular package style suitable for flange mount installations.
42 A
6.3 V
230.8 W
48 ns
1.82 V
NXH450N65L4Q2F2S1G
NXH450N65L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 2 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.2V and can handle up to 365W power dissipation. Ideal for POWER CONTROL applications due to its high Collector Current (IC) of 167A and low Turn Off Time (toff) of 694ns.
167 A
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
5.2 V
R-XUFM-X36
36
365 W
694 ns
211 ns
AFGHL25T120RLD
AFGHL25T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 400W Pd. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
7.1 V
205 ns
43.2 ns
2 V
FGHL75T65LQDT
FGHL75T65LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.35V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175°C, and a turn-off time of 696ns.
469 W
696 ns
88 ns
1.35 V
FGH4L50T65SQD
FGH4L50T65SQD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 169.6ns and ton of 44.8ns, operating at temperatures ranging from -55°C to 175°C.
R-PSFM-T4
268 W
169.6 ns
44.8 ns
NXH300B100H4Q2F2SG-R
NXH300B100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 194W. This COMPLEX transistor has a Nominal Turn Off Time of 326ns, making it suitable for high-power operations in various industrial settings.
73 A
5.9 V
R-XUFM-X59
59
194 W
326 ns
110.42 ns
NXH400N100H4Q2F2SG-R
NXH400N100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 409A. Ideal for POWER CONTROL applications, it has a toff of 619ns and ton of 186ns. Operating temperature ranges from -40 °C to 175°C.
NXH800A100L4Q2F2S1G
NXH800A100L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 309A IC, and 714W power dissipation. Ideal for POWER CONTROL applications due to its high voltage handling capacity and low saturation voltage. Suitable for complex configurations requiring precise control in industrial settings.
309 A
6.7 V
R-XUFM-P17
17
PIN/PEG
1121.94 ns
223.8 ns
NXH800A100L4Q2F2S2G
NXH800A100L4Q2F2S2G by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Max Collector-Emitter Voltage of 1000V, and Max Collector Current of 309A. This COMPLEX transistor has a Nominal Turn Off Time of 1121.94ns and operates b/w -40 to 175 °C temperature range.
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