Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Insulated Gate Bipolar Transistors (IGBT) are electronic devices used in power electronics to control and switch high voltage and high current levels. They are commonly used in applications such as motor drives, power supplies, and welding equipment.The IGBT is a three-terminal device that combines the high-speed switching capability of a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with the low conduction losses of a bipolar transistor. The IGBT consists of a p-type and n-type semiconductor material, which are sandwiched between two electrodes, and an insulated gate electrode.The IGBT is operated by applying a voltage to the gate electrode, which creates a conductive channel between the p-type and n-type material, allowing current to flow through the device. The IGBT is turned off by reducing the gate voltage, which reduces the conductivity of the channel and stops the flow of current.IGBTs are designed to handle high voltage and high current levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.IGBTs are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance. Proper selection and use of IGBTs are critical to ensure reliable and efficient operation of power electronics systems. IGBTs are often used in conjunction with other components, such as diodes and capacitors, to form complete power electronics circuits.
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IKWH30N65WR5XKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 75 A; Maximum Collector-Emitter Voltage: 650 V;
75 A
650 V
SINGLE WITH BUILT-IN DIODE
4.8 V
20 V
TO-247
R-PSFM-T3
1
3
175 Cel
-40 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
190 W
NO
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
416 ns
61 ns
1.7 V
IXGT25N250-T/R
IXYS Corporation
Insulated Gate Bipolar Transistors;
DF120R12W2H3B27BOMA1
Infineon's DF120R12W2H3B27BOMA1 IGBT features 1200V VCEsat, 50A IC, and 180W power dissipation. Ideal for high-power applications like motor drives, renewable energy systems, and industrial automation due to its N-CHANNEL polarity and fast switching times.
ISOLATED
50 A
1200 V
COMPLEX
6.5 V
R-XUFM-X20
20
150 Cel
UNSPECIFIED
180 W
UL APPROVED
UPPER
360 ns
60 ns
2.4 V
F3L15R12W2H3B27BOMA1
Infineon's F3L15R12W2H3B27BOMA1 IGBT is N-CHANNEL with 12 elements, VCEsat of 2.4V, and toff of 355ns. Ideal for power control applications, it has a max VCE of 1200V, IC of 20A, and ton of 67ns. Operating from -40 to +150 °C, UL approved for reliability.
20 A
R-XUFM-X34
12
34
145 W
355 ns
67 ns
FS150R12KT4B9BOSA1
FS150R12KT4B9BOSA1 by Infineon is an N-CHANNEL IGBT with 6 elements in a bridge configuration. It has a max voltage of 1200V, turn off time of 525ns, and turn on time of 196ns. Ideal for power control applications due to its isolated case connection and silicon material composition.
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X33
6
33
525 ns
196 ns
TDB6HK180N16RRBOSA1
TDB6HK180N16RRBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V VCEsat, 140A IC, and 515W power dissipation. Ideal for POWER CONTROL applications due to its fast turn-off time of 410ns and high operating temperature range from -40°C to 150°C.
UL RECOGNIZED
140 A
R-XUFM-X29
29
515 W
410 ns
190 ns
2.2 V
F4-50R07W2H3_B51
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 215 W; Maximum Collector Current (IC): 65 A; Minimum Operating Temperature: -40 Cel;
65 A
R-XUFM-X28
4
28
215 W
342 ns
34 ns
NGTB25N120SWG
Onsemi
NGTB25N120SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 385W. Ideal for power control applications due to its built-in diode and fast turn-off time (toff) of 430ns. Operates in temperatures ranging from -55 °C to 175°C, making it suitable for various industrial uses.
e3
-55 Cel
385 W
TIN
430 ns
178 ns
NGTB40N120SWG
The Onsemi NGTB40N120SWG is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, turn-off time of 564ns, and power dissipation of 535W. The transistor operates b/w -55 to 175 °C and features a built-in diode in a RECTANGULAR package with THROUGH-HOLE terminals.
80 A
535 W
564 ns
154 ns
NGTB45N60S2WG
NGTB45N60S2WG by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.3V and Max IC of 90A. Ideal for POWER CONTROL applications, it has a Max VCE of 600V and can operate in temperatures ranging from -55 to 175 °C.
90 A
600 V
TO-247AD
300 W
Tin (Sn)
232 ns
2.3 V
NGTB50N60S1WG
NGTB50N60S1WG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 100A. It is used for power control applications, featuring a built-in diode and operating temperature range from -55 to 175 °C.
100 A
417 W
341 ns
139 ns
2 V
NGTB75N60SWG
NGTB75N60SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2V, IC of 100A, and Pdiss of 595W. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range in a rectangular package style.
595 W
380 ns
150 ns
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
COLLECTOR
9 A
7 V
R-PSSO-G2
2
SMALL OUTLINE
260
49 W
YES
MATTE TIN
GULL WING
30
105 ns
134 ns
2.1 V
NGTB15N60R2FG
NGTB15N60R2FG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 24A IC, and 54W power dissipation. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and motor control.
24 A
54 W
Insulated Gate BIP Transistors
STGW15M120DF3
STMicroelectronics
STGW15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
30 A
259 W
406 ns
39 ns
STGWA15M120DF3
STGWA15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.
VS-150MT060WDF
Vishay Intertechnology
VS-150MT060WDF by Vishay Intertechnology is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max collector-emitter voltage of 600V and can handle a max collector current of 138A. Ideal for power control applications due to its high power dissipation of 57W and fast turn-off time of 458ns.
138 A
PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
6.2 V
R-PUFM-P14
14
57 W
PIN/PEG
458 ns
247 ns
MG12150W-XN2MM
Littelfuse
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 200 A; JESD-30 Code: R-XUFM-X35; Nominal Turn Off Time (toff): 610 ns;
200 A
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X35
35
125 Cel
610 ns
340 ns
MG1215H-XBN2MM
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
25 A
R-XUFM-X24
7
24
MOTOR CONTROL
140 ns
2.15 V
MG1225H-XBN2MM
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Transistor Application: MOTOR CONTROL; Package Body Material: UNSPECIFIED;
40 A
MG1225H-XN2MM
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Operating Temperature: 125 Cel; Minimum Operating Temperature: -40 Cel;
MG1250H-XN2MM
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Position: UPPER; Transistor Element Material: SILICON;
MG1250W-XBN2MM
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; No. of Elements: 7; JESD-30 Code: R-XUFM-X24;
MG1275H-XN2MM
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Minimum Operating Temperature: -40 Cel; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
105 A
MG1275W-XBN2MM
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Nominal Turn On Time (ton): 340 ns; Terminal Form: UNSPECIFIED;
MG1275W-XN2MM
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 105 A; Transistor Application: POWER CONTROL; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
R-PUFM-X35
MG17100S-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 150 A; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 2;
150 A
1700 V
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
6.4 V
R-XUFM-X7
1100 ns
450 ns
2.45 V
MG17150D-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 250 A; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Application: POWER CONTROL;
250 A
1200 ns
480 ns
MG17300WB-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 375 A; Package Style (Meter): FLANGE MOUNT; Maximum Operating Temperature: 125 Cel;
375 A
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X11
11
1300 ns
385 ns
MG17450WB-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 600 A; Terminal Form: UNSPECIFIED; Maximum Operating Temperature: 125 Cel;
600 A
400 ns
MG1750S-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Nominal Turn Off Time (toff): 1100 ns; JESD-30 Code: R-XUFM-X7;
MG1775S-BN4MM
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 125 A; JESD-30 Code: R-XUFM-X7; Package Body Material: UNSPECIFIED;
125 A
FD-DF80R12W1H3_B52
N-Channel; Maximum Power Dissipation (Abs): 215 W; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON; Minimum Operating Temperature: -40 Cel;
N-Channel
320 ns
43 ns
BSM150GB120DLCHOSA1
Infineon's BSM150GB120DLCHOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, 1200V max. collector-emitter voltage, and 300A max. collector current. It features a fast turn-off time of 650ns and turn-on time of 190ns, making it ideal for high-power applications like motor drives and inverters.
300 A
650 ns
BSM300GA120DLCHOSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 570 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUFM-X5;
570 A
R-XUFM-X5
5
FB10R06KL4BOMA1
N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR; No. of Terminals: 17;
16 A
R-XUFM-X17
17
260 ns
FB20R06YE3B1BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Package Shape: RECTANGULAR; Terminal Position: UPPER;
27 A
R-XUFM-X26
26
33 ns
FD1000R33HE3KBPSA1
Infineon's FD1000R33HE3KBPSA1 is a N-CHANNEL IGBT with 2 elements & built-in diode. It has a max collector-emitter voltage of 3300V, collector current of 1000A, and turn-off time of 3550ns. Ideal for power control applications due to its common gate configuration and silicon material.
1000 A
3300 V
COMMON GATE, 2 ELEMENTS WITH BUILT-IN DIODE
R-XUFM-X9
9
3550 ns
1150 ns
FF600R12ME4CB11BOSA1
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 4050 W; Maximum Collector Current (IC): 1060 A; Package Shape: RECTANGULAR;
1060 A
4050 W
710 ns
300 ns
FF600R12ME4CBOSA1
FF600R12ME4CBOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1200V and current of 1060A, suitable for POWER CONTROL applications. With a turn off time of 710ns and turn on time of 300ns, it offers efficient performance in RECTANGULAR package style.
FP10R06KL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 16 A; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON;
R-XUFM-X23
23
FP10R12KE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;
15 A
481 ns
80 ns
FP15R12KE3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 27 A; Terminal Position: UPPER; Package Body Material: UNSPECIFIED;
508 ns
97 ns
FP20R06KL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Nominal Turn On Time (ton): 60 ns;
185 ns
FS25R12YT3BOMA1
Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
R-XUFM-X22
22
640 ns
120 ns
FS35R12YT3BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Terminal Form: UNSPECIFIED; Terminal Position: UPPER;
FS50R06YL4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X23;
55 A
160 ns
55 ns
FS800R07A2E3BOSA2
N-CHANNEL; Configuration: 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 700 A; No. of Terminals: 33; Package Style (Meter): FLANGE MOUNT;
700 A
3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
690 ns
230 ns
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