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VS-150MT060WDF

Vishay Intertechnology

VS-150MT060WDF by Vishay Intertechnology

VS-150MT060WDF by Vishay Intertechnology is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a max collector-emitter voltage of 600V and can handle a max collector current of 138A. Ideal for power control applications due to its high power dissipation of 57W and fast turn-off time of 458ns.

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 8,839 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Corohmni

South Africa . 26 parts In-Stock

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$0.934

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26

$0.934

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Ampacity Inc.

Singapore . 390 parts In-Stock

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$6.050

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Microchip USA

USA . 245 parts In-Stock

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$6.071

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AZTECH Wire

Italy . 1,011 parts In-Stock

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$12.810

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Argo Parts USA

USA . 4,506 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

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Aranea Global

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Overview

Enhance your power control applications with the Vishay Intertechnology VS-150MT060WDF Insulated Gate Bipolar Transistor (IGBT). With a robust construction and high-quality materials, this N-CHANNEL transistor offers parallel configuration with 2 elements, built-in diode, and thermistor for optimal performance. Whether you're in the industrial, automotive, or renewable energy sector, this transistor provides efficient power handling and reliable operation. Trust Vishay Intertechnology for superior products that deliver value, benefits, and advantages to meet your needs. Discover the difference with the VS-150MT060WDF today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the internal components of the IGBT, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

The parallel configuration with built-in diode and thermistor allows for improved performance and protection against voltage spikes and temperature variations.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT is capable of handling high power levels efficiently and effectively.

Maximum Power Dissipation (Abs): 57 W

With a high maximum power dissipation, this IGBT can handle significant levels of power without overheating or failing.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage allows this IGBT to be used in a wide range of applications where high voltage levels are required.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage ensures safe and reliable operation of the IGBT, protecting it from voltage spikes and overloads.

Maximum Collector Current (IC): 138 A

With a high maximum collector current, this IGBT can handle large current loads, making it suitable for high-power applications.

Nominal Turn On Time (ton): 247 ns

The fast nominal turn-on time of this IGBT allows for quick switching and control of power, improving efficiency and performance.

Reference Standard: UL RECOGNIZED

Being UL recognized ensures that this IGBT meets the safety and quality standards set by Underwriters Laboratories, making it a reliable choice for various applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-150MT060WDF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

6.2 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-P14

No. of Elements:

2

No. of Terminals:

14

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

PIN/PEG

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

458 ns

Nominal Turn On Time (ton):

247 ns

Trade Compliance

VS-150MT060WDF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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