Loading...

FS25R12YT3BOMA1

Infineon Technologies

FS25R12YT3BOMA1 by Infineon Technologies

Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.

Median Price

$71.550

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 176 parts In-Stock

1+ parts

-

100+ parts

$63.600

1k+ parts

$56.910

10k+ parts

$53.560

176

-

$63.600

$56.910

$53.560

Verical

USA . 176 parts In-Stock

1+ parts

-

100+ parts

$79.500

1k+ parts

-

10k+ parts

-

176

-

$79.500

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$63.721

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$63.721

-

-

-

Digiode

USA . 208 parts In-Stock

1+ parts

$67.308

100+ parts

-

1k+ parts

-

10k+ parts

-

208

$67.308

-

-

-

Vyrian

USA . 5,155 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,155

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 4,639 parts In-Stock

1+ parts

$1.880

100+ parts

-

1k+ parts

-

10k+ parts

-

4,639

$1.880

-

-

-

AZTECH Wire

Italy . 195 parts In-Stock

1+ parts

$8.697

100+ parts

-

1k+ parts

-

10k+ parts

-

195

$8.697

-

-

-

Ampacity Inc.

Singapore . 267 parts In-Stock

1+ parts

$60.220

100+ parts

-

1k+ parts

-

10k+ parts

-

267

$60.220

-

-

-

Semicontronic

India . 18 parts In-Stock

1+ parts

$60.220

100+ parts

$58.714

1k+ parts

$58.413

10k+ parts

-

18

$60.220

$58.714

$58.413

-

Continental Prestige Electronics

USA . 6,624 parts In-Stock

1+ parts

$63.721

100+ parts

-

1k+ parts

-

10k+ parts

$62.447

6,624

$63.721

-

-

$62.447

Netroflash

USA . 500 parts In-Stock

1+ parts

$63.721

100+ parts

-

1k+ parts

$60.535

10k+ parts

$59.261

500

$63.721

-

$60.535

$59.261

Corphita

USA . 945 parts In-Stock

1+ parts

$63.765

100+ parts

-

1k+ parts

-

10k+ parts

-

945

$63.765

-

-

-

Modulus Dynamics

Lithuania . 679 parts In-Stock

1+ parts

$77.630

100+ parts

$74.525

1k+ parts

$71.420

10k+ parts

-

679

$77.630

$74.525

$71.420

-

Corohmni

South Africa . 185 parts In-Stock

1+ parts

$77.630

100+ parts

-

1k+ parts

-

10k+ parts

-

185

$77.630

-

-

-

Microchip USA

USA . 2,626 parts In-Stock

1+ parts

$156.423

100+ parts

-

1k+ parts

-

10k+ parts

-

2,626

$156.423

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 2,941 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,941

-

-

-

-

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Argo Parts USA

USA . 317 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

317

-

-

-

-

Perfect Parts

USA . 90 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90

-

-

-

-

Overview

Experience unmatched performance and reliability with the FS25R12YT3BOMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon sets the standard for quality and innovation. This Insulated Gate Bipolar Transistor (IGBT) offers a range of applications, from power supplies to motor control, with its N-CHANNEL polarity and COMPLEX configuration. With a nominal turn off time of 640 ns and a maximum collector-emitter voltage of 1200 V, this product delivers exceptional value and efficiency. Trust Infineon for superior technology that meets your needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them suitable for various applications including motor drives and power inverters.

Configuration: COMPLEX

The complex configuration allows for improved performance and control over the switching characteristics, making this IGBT versatile and suitable for demanding applications.

Package Shape: RECTANGULAR

The rectangular package shape offers ease of mounting and installation, making it convenient for integrating into different electronic systems.

Nominal Turn Off Time (toff): 640 ns

The relatively fast turn-off time of 640 ns ensures efficient switching and helps in reducing power losses, making this IGBT ideal for high-frequency applications.

No. of Terminals: 22

The higher number of terminals allows for more connections and control options, enhancing the versatility and flexibility of this IGBT for complex circuit designs.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum voltage rating of 1200 V enables this IGBT to handle high voltage levels safely, making it suitable for power electronics applications where voltage spikes are common.

Transistor Element Material: SILICON

Silicon is a widely used material for transistor elements due to its high thermal conductivity and durability, ensuring reliable performance and extended lifespan of this IGBT.

Maximum Collector Current (IC): 40 A

The high maximum collector current rating of 40 A allows this IGBT to handle heavy loads with ease, making it suitable for high-power applications where current requirements are significant.

Terminal Position: UPPER

The upper terminal position helps in simplifying the connection layout and improves heat dissipation, enhancing the overall performance and reliability of this IGBT.

Case Connection: ISOLATED

The isolated case connection ensures electrical insulation and prevents short circuits, enhancing the safety and reliability of this IGBT in diverse operating conditions.

Nominal Turn On Time (ton): 120 ns

The fast turn-on time of 120 ns allows for quick response and efficient switching, reducing power losses and improving overall performance in high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FS25R12YT3BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X22

No. of Elements:

6

No. of Terminals:

22

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

640 ns

Nominal Turn On Time (ton):

120 ns

Trade Compliance

FS25R12YT3BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 17