Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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DF160R12W2H3_B11
Infineon Technologies
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 50 A; Terminal Position: UPPER; Case Connection: ISOLATED;
ISOLATED
50 A
1200 V
COMPLEX
R-XUFM-X19
4
19
UNSPECIFIED
RECTANGULAR
FLANGE MOUNT
NOT SPECIFIED
N-CHANNEL
UL APPROVED
NO
UPPER
POWER CONTROL
SILICON
375 ns
49 ns
DF80R12W2H3_B11
N-Channel; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 190 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;
6.5 V
20 V
R-XUFM-X22
2
22
150 Cel
-40 Cel
N-Channel
190 W
600 ns
1.7 V
FZ1200R12KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Terminal Position: UPPER; No. of Terminals: 7;
1200 A
R-XUFM-X7
7
Not Qualified
1050 ns
700 ns
FP25R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 40 A; Maximum Collector-Emitter Voltage: 1200 V; Package Style (Meter): FLANGE MOUNT;
40 A
R-XUFM-X24
24
460 ns
110 ns
FZ1200R33KL2CNOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2300 A; Package Body Material: UNSPECIFIED;
2300 A
3300 V
R-XUFM-X9
3
9
14500 W
Insulated Gate BIP Transistors
4250 ns
1700 ns
3.65 V
BSM50GP120BOSA1
Infineon Technologies' BSM50GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn-off time of 430ns and a max operating temperature of 150°C. Ideal for applications requiring high current handling capabilities in complex configurations.
80 A
R-XUFM-X35
e3
35
MATTE TIN
430 ns
105 ns
BSM35GP120GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 1200 V;
45 A
390 ns
BSM25GP120BOSA1
Infineon's BSM25GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 45A max collector current. It has a toff of 420ns and ton of 90ns, suitable for applications requiring high power switching in complex configurations. The package style is flange mount with isolated case connection, ideal for industrial settings with temperatures up to 150°C.
420 ns
90 ns
FP15R12KS4CBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Qualification: Not Qualified; JESD-30 Code: R-XUFM-X24;
30 A
BSM35GP120BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 45 A; Terminal Position: UPPER; Nominal Turn On Time (ton): 105 ns;
FP50R12KT3BOSA1
Infineon's FP50R12KT3BOSA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 75A max collector current, and 610ns nominal turn off time. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
75 A
610 ns
140 ns
FP50R12KS4CBOSA1
Infineon Technologies' FP50R12KS4CBOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector current of 70A, and max. collector-emitter voltage of 1200V. It has a nominal turn on time of 110ns and turn off time of 460ns. Ideal for high-power applications requiring fast switching capabilities in industrial settings.
70 A
FP40R12KT3GBOSA1
FP40R12KT3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and a max collector current of 55A. This complex configuration transistor is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.
55 A
FP15R12KT3BOSA1
FP15R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 25A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
25 A
BSM10GP120BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 20 A; No. of Elements: 7; Nominal Turn On Time (ton): 95 ns;
20 A
345 ns
95 ns
BSM15GP120BOSA1
Infineon's BSM15GP120BOSA1 is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 1200V, and max. collector current of 35A. It has a nominal turn-off time of 465ns and turn-on time of 121ns, making it ideal for high-power applications requiring fast switching capabilities in industrial settings.
35 A
465 ns
121 ns
FP100R12KT4BOSA1
FP100R12KT4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 1200V max collector-emitter voltage, and 620ns turn off time. It is used in applications requiring high power switching such as industrial motor drives and renewable energy systems due to its complex configuration and silicon transistor element material.
620 ns
210 ns
BSM20GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 35 A; Nominal Turn On Time (ton): 100 ns; Package Style (Meter): FLANGE MOUNT;
600 V
175 Cel
310 ns
100 ns
BSM15GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Nominal Turn Off Time (toff): 400 ns;
100 A
400 ns
BSM50GP60GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Package Shape: RECTANGULAR; No. of Elements: 7;
315 ns
BSM75GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;
BSM10GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 24; Nominal Turn Off Time (toff): 315 ns;
BSM30GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Terminal Position: UPPER; Terminal Form: UNSPECIFIED;
BSM100GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 135 A; Package Body Material: UNSPECIFIED; Qualification: Not Qualified;
135 A
330 ns
BSM50GP60BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Transistor Element Material: SILICON; Nominal Turn On Time (ton): 105 ns;
FP25R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 39 A; Package Body Material: UNSPECIFIED; Terminal Position: UPPER;
39 A
R-XUFM-X23
23
520 ns
47 ns
FP35R12U1T4BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Transistor Element Material: SILICON; No. of Elements: 7;
54 A
510 ns
43 ns
FZ800R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 800 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;
800 A
1600 V
R-XUFM-X5
5
GENERAL PURPOSE
1600 ns
1000 ns
FP100R06KE3BOSA1
FP100R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V. It has a nominal turn-off time of 820ns and a nominal turn-on time of 170ns. This IGBT is commonly used in applications requiring high power switching, such as motor drives and power supplies.
820 ns
170 ns
FP100R07N3E4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Nominal Turn On Time (ton): 100 ns; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;
650 V
R-XUFM-X43
43
370 ns
FP10R06W1E3BOMA1
Infineon Technologies' FP10R06W1E3BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 600V, and max. current of 16A. Ideal for power control applications due to its fast turn on/off times (ton: 26ns, toff: 260ns) and operating temp up to 175°C in a rectangular package style.
16 A
260 ns
26 ns
FP10R12W1T4BOMA1
Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.
500 ns
108 ns
FP150R07N3E4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Transistor Application: POWER CONTROL;
450 ns
180 ns
FP15R06W1E3BOMA1
FP15R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 23 terminals, and a max collector current of 15 A. It has a nominal turn-off time of 260 ns and a max operating temperature of 175°C. This complex transistor is commonly used in power control applications due to its silicon element material and isolated case connection.
15 A
29 ns
FP15R12W1T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 28 A; Qualification: Not Qualified; Package Shape: RECTANGULAR;
28 A
495 ns
120 ns
FP20R06W1E3BOMA1
FP20R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, designed for POWER CONTROL applications. It features a max Collector-Emitter Voltage of 600V, Nominal Turn Off Time of 250ns, and Max Collector Current of 27A. This COMPLEX transistor has a rectangular package style and operates at temperatures up to 175°C.
27 A
250 ns
37 ns
FP30R06KE3BOSA1
Infineon's FP30R06KE3BOSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 37A max collector current, and 750ns nominal turn-off time. Its complex configuration makes it suitable for high-power applications like industrial motor drives and renewable energy systems.
37 A
750 ns
FP30R06W1E3BOMA1
FP30R06W1E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector-emitter voltage of 600V, and max. collector current of 37A. It has a nominal turn off time of 245ns and turn on time of 42ns, making it ideal for power control applications requiring fast switching capabilities at up to 175°C operating temperature.
245 ns
42 ns
FP35R12W2T4BOMA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 54 A; Package Style (Meter): FLANGE MOUNT; Transistor Application: POWER CONTROL;
FP40R12KE3GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Transistor Element Material: SILICON; No. of Terminals: 35;
135 ns
FP40R12KE3BOSA1
FP40R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 55A max collector current, and 610ns nominal turn off time. It is used for power control applications due to its complex configuration and silicon transistor element material. The package style is flange mount with a rectangular shape and wire terminals.
R-XUFM-W24
WIRE
FP40R12KT3BOSA1
FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
FP50R06KE3GBOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 60 A; Maximum Collector-Emitter Voltage: 600 V; No. of Terminals: 24;
60 A
760 ns
FP50R06KE3BOSA1
FP50R06KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 60A max collector current, and 170ns nominal turn on time. It is used in applications requiring high power switching such as motor drives and inverters due to its complex configuration and isolated case connection.
FP50R06W2E3BOMA1
FP50R06W2E3BOMA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, max. collector current of 65A, and turn off time of 470ns. It is used for power control applications, featuring a max operating temp. of 175°C and max. collector-emitter voltage of 600V in a rectangular package style with flange mount.
65 A
470 ns
85 ns
FP50R07N2E4BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 70 A; No. of Terminals: 31; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
6.45 V
R-XUFM-X31
31
265 ns
1.95 V
FP50R12KE3BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 75 A; Terminal Form: UNSPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FP75R06KE3BOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 95 A; Nominal Turn On Time (ton): 170 ns; Peak Reflow Temperature (C): NOT SPECIFIED;
95 A
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