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FP10R12W1T4BOMA1

Infineon Technologies

FP10R12W1T4BOMA1 by Infineon Technologies

Infineon Technologies' FP10R12W1T4BOMA1 is an N-CHANNEL IGBT with 7 elements, max. voltage of 1200V, and max. current of 20A. Ideal for POWER CONTROL applications due to its fast turn-off time of 500ns and turn-on time of 108ns. Package style is FLANGE MOUNT with RECTANGULAR shape and UPPER terminal position.

Median Price

$28.985

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 19 parts In-Stock

1+ parts

$6.704

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19

$6.704

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Farnell

UK . 67 parts In-Stock

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$29.780

100+ parts

$22.020

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67

$29.780

$22.020

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Chip1Stop

Japan . 21 parts In-Stock

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$33.500

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21

$33.500

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Newark

USA . 63 parts In-Stock

1+ parts

$34.780

100+ parts

$23.120

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$22.570

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63

$34.780

$23.120

$22.570

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Element14

Singapore . 71 parts In-Stock

1+ parts

$45.610

100+ parts

$35.208

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71

$45.610

$35.208

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Rochester

USA . 67 parts In-Stock

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$21.420

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$19.170

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$18.040

67

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$21.420

$19.170

$18.040

DigiKey

USA . 62 parts In-Stock

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$28.190

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62

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$28.190

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Verical

USA . 45 parts In-Stock

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$26.775

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$23.962

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$22.550

45

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$26.775

$23.962

$22.550

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 422 parts In-Stock

1+ parts

$25.688

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422

$25.688

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Vyrian

USA . 3,696 parts In-Stock

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3,696

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Nova Conductors

Japan . 10 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 353 parts In-Stock

1+ parts

$0.604

100+ parts

-

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353

$0.604

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Aztec Data Supply Inc.

USA . 304 parts In-Stock

1+ parts

$0.810

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304

$0.810

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Modulus Dynamics

Lithuania . 23,423 parts In-Stock

1+ parts

$0.867

100+ parts

$0.832

1k+ parts

$0.798

10k+ parts

-

23,423

$0.867

$0.832

$0.798

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Advanced Electronics

New Zealand . 65 parts In-Stock

1+ parts

$0.988

100+ parts

$0.899

1k+ parts

$0.810

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65

$0.988

$0.899

$0.810

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Ampacity Inc.

Singapore . 51 parts In-Stock

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$5.700

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51

$5.700

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Semicontronic

India . 51 parts In-Stock

1+ parts

$5.700

100+ parts

$5.558

1k+ parts

$5.529

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51

$5.700

$5.558

$5.529

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AZTECH Wire

Italy . 834 parts In-Stock

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$12.891

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834

$12.891

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Corphita

USA . 189 parts In-Stock

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$24.336

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189

$24.336

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Continental Prestige Electronics

USA . 55 parts In-Stock

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$26.850

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$22.830

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55

$26.850

$22.830

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Component Stockers USA

USA . 119 parts In-Stock

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$31.220

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$31.220

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Microchip USA

USA . 3,817 parts In-Stock

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$92.115

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3,817

$92.115

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Robosynatics

Brazil . 18,034 parts In-Stock

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$1.943

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$1.904

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$1.904

18,034

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$1.943

$1.904

$1.904

Lucentia Tech

USA . 18,034 parts In-Stock

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$1.943

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$1.904

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$1.904

18,034

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$1.943

$1.904

$1.904

QUARKTWIN TECHNOLOGY LTD

USA . 2,497 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Argo Parts USA

USA . 1,544 parts In-Stock

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Perfect Parts

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Bastille Electronics

Australia . 40 parts In-Stock

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Overview

Elevate your power control capabilities with the FP10R12W1T4BOMA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. Ideal for a wide range of applications, this N-CHANNEL transistor offers unparalleled performance and reliability. With a complex configuration and 7 elements, this product guarantees precise power control with a nominal turn-off time of 500 ns. Experience the benefits of this innovative technology and elevate your power control solutions today!

Feature Benefit Bullets

Polarity or Channel Type:

N-CHANNEL - This makes the product suitable for high power control applications.

Configuration:

COMPLEX - The complex configuration allows for efficient power control and management.

Transistor Application:

POWER CONTROL - Ideal for applications requiring precise power control and management.

Package Shape:

RECTANGULAR - The rectangular shape of the package makes it easy to integrate into various systems.

No. of Elements:

7 - Having 7 elements allows for greater control and versatility in power management.

Nominal Turn Off Time (toff):

500 ns - The fast turn off time ensures quick and efficient power switching.

No. of Terminals:

23 - With 23 terminals, there are ample connection options available for various configurations.

Package Style (Meter):

FLANGE MOUNT - The flange mount package style provides a secure and stable mounting option.

Maximum Operating Temperature:

175 °C - The high operating temperature range allows for use in a wide range of environments.

Maximum Collector-Emitter Voltage:

1200 V - With a high voltage rating, this product can handle demanding power requirements.

Transistor Element Material:

SILICON - Silicon is a reliable and durable material for transistor elements.

Maximum Collector Current (IC):

20 A - The high collector current rating makes this product suitable for high power applications.

Terminal Position:

UPPER - The upper terminal position makes it easy to connect to other components in a system.

Case Connection:

ISOLATED - The isolated case connection helps to prevent interference and ensure stable performance.

Nominal Turn On Time (ton):

108 ns - The fast turn on time ensures quick and responsive power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FP10R12W1T4BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JESD-30 Code:

R-XUFM-X23

No. of Elements:

7

No. of Terminals:

23

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

500 ns

Nominal Turn On Time (ton):

108 ns

Trade Compliance

FP10R12W1T4BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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