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IRG4PC50WPBF

International Rectifier

IRG4PC50WPBF by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-PSFM-T3;

Median Price

$5.221

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< 1k

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Nova Conductors

Japan . 100 parts In-Stock

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$3.763

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$3.763

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Digiode

USA . 375 parts In-Stock

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$6.678

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$6.678

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USA . 131 parts In-Stock

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Huijzer Components

Netherlands . 30 parts In-Stock

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ComSIT Distribution GmbH

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Vyrian

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Modulus Dynamics

Lithuania . 14,352 parts In-Stock

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$3.627

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$3.482

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$3.337

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14,352

$3.627

$3.482

$3.337

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Bastille Electronics

Australia . 500 parts In-Stock

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$3.763

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$3.575

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$3.396

10k+ parts

$3.349

500

$3.763

$3.575

$3.396

$3.349

Continental Prestige Electronics

USA . 259 parts In-Stock

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$3.763

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$3.688

259

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$3.688

Argo Parts USA

USA . 107 parts In-Stock

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$3.763

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AZTECH Wire

Italy . 568 parts In-Stock

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$5.064

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Ampacity Inc.

Singapore . 6 parts In-Stock

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Corphita

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Perfect Parts

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A-Z Elektronik GmbH

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USA . 4,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,281 parts In-Stock

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S.R.D Solutions

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Assy Fe

Spain . 10 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4PC50WPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

86 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

272 ns

Nominal Turn On Time (ton):

74 ns

Trade Compliance

IRG4PC50WPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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