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IKQ75N120CH3XKSA1

Infineon Technologies

IKQ75N120CH3XKSA1 by Infineon Technologies

IKQ75N120CH3XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 150A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 454ns and turn-on time of 81ns, this transistor operates from -40°C temperature range.

Median Price

$12.948

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 137 parts In-Stock

1+ parts

$3.929

100+ parts

$3.678

1k+ parts

$3.658

10k+ parts

-

137

$3.929

$3.678

$3.658

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DigiKey

USA . 1,311 parts In-Stock

1+ parts

$12.530

100+ parts

$7.555

1k+ parts

$6.178

10k+ parts

-

1,311

$12.530

$7.555

$6.178

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Chip1Stop

Japan . 210 parts In-Stock

1+ parts

$12.900

100+ parts

-

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-

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210

$12.900

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Farnell

UK . 1,123 parts In-Stock

1+ parts

$12.948

100+ parts

$10.792

1k+ parts

$10.366

10k+ parts

-

1,123

$12.948

$10.792

$10.366

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Mouser Electronics

USA . 426 parts In-Stock

1+ parts

$13.010

100+ parts

$7.410

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-

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426

$13.010

$7.410

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Verical

USA . 25 parts In-Stock

1+ parts

$13.025

100+ parts

$7.215

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-

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25

$13.025

$7.215

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Newark

USA . 361 parts In-Stock

1+ parts

$16.250

100+ parts

$11.650

1k+ parts

$11.200

10k+ parts

-

361

$16.250

$11.650

$11.200

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Element14

Singapore . 361 parts In-Stock

1+ parts

$18.780

100+ parts

$12.120

1k+ parts

$11.480

10k+ parts

-

361

$18.780

$12.120

$11.480

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RS (Exports)

UK . 115 parts In-Stock

1+ parts

-

100+ parts

$10.352

1k+ parts

$14.068

10k+ parts

-

115

-

$10.352

$14.068

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 838 parts In-Stock

1+ parts

$6.511

100+ parts

-

1k+ parts

-

10k+ parts

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838

$6.511

-

-

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$13.485

100+ parts

-

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-

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50

$13.485

-

-

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Vyrian

USA . 91 parts In-Stock

1+ parts

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91

-

-

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Rutronik

Germany . 90 parts In-Stock

1+ parts

-

100+ parts

$9.170

1k+ parts

$8.300

10k+ parts

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90

-

$9.170

$8.300

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 186 parts In-Stock

1+ parts

$1.341

100+ parts

-

1k+ parts

-

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186

$1.341

-

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Ampacity Inc.

Singapore . 863 parts In-Stock

1+ parts

$3.340

100+ parts

-

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-

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863

$3.340

-

-

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Semicontronic

India . 231 parts In-Stock

1+ parts

$3.340

100+ parts

$3.256

1k+ parts

$3.240

10k+ parts

-

231

$3.340

$3.256

$3.240

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Corphita

USA . 493 parts In-Stock

1+ parts

$6.169

100+ parts

-

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-

10k+ parts

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493

$6.169

-

-

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Modulus Dynamics

Lithuania . 12,132 parts In-Stock

1+ parts

$12.934

100+ parts

$12.417

1k+ parts

$11.899

10k+ parts

-

12,132

$12.934

$12.417

$11.899

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Corohmni

South Africa . 226 parts In-Stock

1+ parts

$12.934

100+ parts

-

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226

$12.934

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$13.215

100+ parts

-

1k+ parts

$12.687

10k+ parts

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1,000

$13.215

-

$12.687

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$13.322

100+ parts

$12.656

1k+ parts

$12.656

10k+ parts

-

1,000

$13.322

$12.656

$12.656

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Continental Prestige Electronics

USA . 956 parts In-Stock

1+ parts

$15.520

100+ parts

$10.650

1k+ parts

-

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956

$15.520

$10.650

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Allen Electronics Distributors

USA . 157 parts In-Stock

1+ parts

$18.530

100+ parts

-

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157

$18.530

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GreenTree Electronics

Israel . 48,000 parts In-Stock

1+ parts

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48,000

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Robosynatics

Brazil . 21,534 parts In-Stock

1+ parts

-

100+ parts

$12.675

1k+ parts

$12.417

10k+ parts

$12.417

21,534

-

$12.675

$12.417

$12.417

Lucentia Tech

USA . 21,534 parts In-Stock

1+ parts

-

100+ parts

$12.675

1k+ parts

$12.417

10k+ parts

$12.417

21,534

-

$12.675

$12.417

$12.417

Microchip USA

USA . 7,921 parts In-Stock

1+ parts

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7,921

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Argo Parts USA

USA . 3,625 parts In-Stock

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3,625

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RC Electronics

USA . 1,231 parts In-Stock

1+ parts

-

100+ parts

$12.980

1k+ parts

$11.850

10k+ parts

$11.490

1,231

-

$12.980

$11.850

$11.490

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

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1,000

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Perfect Parts

USA . 269 parts In-Stock

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269

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iodParts Technologies Inc.

India . 40 parts In-Stock

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40

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Overview

Unlock the power of high-quality performance with the IKQ75N120CH3XKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-notch Insulated Gate Bipolar Transistors (IGBT) like no other. Perfect for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for added convenience. Experience superior reliability and efficiency with a maximum collector-emitter voltage of 1200V and a maximum collector current of 150A. Elevate your projects with the IKQ75N120CH3XKSA1 and discover the difference in quality and performance today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this IGBT lightweight and durable, ideal for various electronic applications.

Polarity or Channel Type: N-CHANNEL

The N-channel design of this IGBT allows for efficient power control and handling of high voltages, making it suitable for power management systems.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode in this IGBT simplifies circuit design and ensures better efficiency in power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, this IGBT offers reliable performance and precise power management capabilities.

Package Shape: RECTANGULAR

The rectangular package shape of this IGBT allows for easy integration into electronic circuits and provides efficient heat dissipation for enhanced performance.

Terminal Form: THROUGH-HOLE

The through-hole terminal form of this IGBT facilitates easy soldering onto circuit boards, ensuring secure connections and optimal performance.

Nominal Turn Off Time (toff): 454 ns

With a fast turn-off time of 454 ns, this IGBT is able to quickly switch off power to prevent damage from voltage spikes, enhancing system protection.

No. of Terminals: 3

With 3 terminals, this IGBT offers easy connectivity options for circuit design, allowing for versatile applications in various electronic systems.

Package Style (Meter): FLANGE MOUNT

The flange mount package style of this IGBT simplifies installation and provides a secure mounting solution for stable operation in power control systems.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage of 1200 V ensures that this IGBT can handle high power levels and voltage spikes with minimal risk of damage.

Transistor Element Material: SILICON

Made from silicon, a reliable and durable semiconductor material, this IGBT offers stable performance and efficient power control capabilities.

Minimum Operating Temperature: -40 °C

With a minimum operating temperature of -40°C, this IGBT is suitable for use in a wide range of environments, making it a versatile choice for various applications.

Maximum Collector Current (IC): 150 A

With a high maximum collector current of 150 A, this IGBT is able to handle large power loads and is ideal for high-current power control applications.

Terminal Finish: TIN

The tin terminal finish on this IGBT ensures reliable electrical connections and corrosion resistance, making it a durable choice for long-term use.

Terminal Position: SINGLE

Featuring a single terminal position, this IGBT offers easy installation and wiring options, simplifying the integration process into electronic circuits.

Nominal Turn On Time (ton): 81 ns

With a fast turn-on time of 81 ns, this IGBT can quickly switch on power to provide efficient control in power management systems.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKQ75N120CH3XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

454 ns

Nominal Turn On Time (ton):

81 ns

Trade Compliance

IKQ75N120CH3XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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