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VS-CPV364M4FPBF

Vishay Intertechnology

VS-CPV364M4FPBF by Vishay Intertechnology

VS-CPV364M4FPBF by Vishay Intertechnology is an N-CHANNEL IGBT with 600V VCEsat, 27A IC, and 63W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration, 240ns fall time, and -40 to 150°C operating temperature range.

Median Price

$91.379

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 150 parts In-Stock

1+ parts

$91.379

100+ parts

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150

$91.379

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Vyrian

USA . 2,143 parts In-Stock

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2,143

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 273 parts In-Stock

1+ parts

$0.357

100+ parts

-

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273

$0.357

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Aztec Data Supply Inc.

USA . 3,733 parts In-Stock

1+ parts

$1.360

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3,733

$1.360

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Microchip USA

USA . 339 parts In-Stock

1+ parts

$2.320

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339

$2.320

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AZTECH Wire

Italy . 620 parts In-Stock

1+ parts

$11.890

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620

$11.890

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Semicontronic

India . 1,620 parts In-Stock

1+ parts

$65.050

100+ parts

$63.424

1k+ parts

$63.098

10k+ parts

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1,620

$65.050

$63.424

$63.098

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Ampacity Inc.

Singapore . 608 parts In-Stock

1+ parts

$65.050

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608

$65.050

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Continental Prestige Electronics

USA . 2,575 parts In-Stock

1+ parts

$91.379

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$89.551

2,575

$91.379

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$89.551

Argo Parts USA

USA . 3,986 parts In-Stock

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3,986

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Netroflash

USA . 1,000 parts In-Stock

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100+ parts

$89.551

1k+ parts

$86.810

10k+ parts

$84.982

1,000

-

$89.551

$86.810

$84.982

Overview

Unleash the power of efficient and reliable power control with the VS-CPV364M4FPBF by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for high-performance applications. With a maximum collector-emitter voltage of 600 V and a maximum power dissipation of 63 W, this N-channel complex configuration transistor is perfect for a wide range of power control needs. Trust Vishay Intertechnology to provide you with the value, benefits, and advantages you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the IGBT, ensuring its durability and reliability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance, higher current handling capabilities, and faster switching speeds compared to P-channel IGBTs.

Configuration: COMPLEX

Complex configuration allows for advanced power control applications and efficient performance.

Maximum VCEsat: 1.5 V

Low VCEsat value means minimal power loss and improved efficiency in power control applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connection and ease of soldering, ensuring reliable electrical connections.

Maximum Collector-Emitter Voltage: 600 V

The high maximum VCE allows for handling high voltage levels in power control applications.

Maximum Collector Current (IC): 27 A

High current handling capacity enables the IGBT to handle large power loads effectively.

Maximum Power Dissipation (Abs): 63 W

With a high power dissipation rating, this IGBT can handle significant power levels without overheating.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-CPV364M4FPBF attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

240 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T13

No. of Elements:

6

No. of Terminals:

13

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

570 ns

Nominal Turn Off Time (toff):

380 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

1.5 V

Trade Compliance

VS-CPV364M4FPBF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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