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V23990-K230-F40-/0B/-PM

Vincotech

V23990-K230-F40-/0B/-PM by Vincotech

Vincotech V23990-K230-F40-/0B/-PM is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max VCEsat of 2.2V and can handle up to 88A IC. Ideal for power control applications, this IGBT operates at temperatures up to 175°C with a collector-emitter voltage of 1200V.

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Nova Conductors

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AZTECH Wire

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Overview

Enhance your power control applications with the V23990-K230-F40-/0B/-PM by Vincotech. As a leading manufacturer in the Insulated Gate Bipolar Transistor (IGBT) category, Vincotech offers a superior product that boasts a maximum VCEsat of 2.2V and a maximum collector-emitter voltage of 1200V. With 6 elements and built-in diode and thermistor, this transistor provides exceptional performance and reliability. Whether you're looking to optimize power efficiency or enhance control in your systems, the V23990-K230-F40-/0B/-PM delivers the value, benefits, and advantages you need for success.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher switching speeds compared to P-CHANNEL IGBTs, making them more efficient for power control applications.

Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

The bridge configuration with built-in diode and thermistor simplifies the design and enhances the reliability of the power control system.

Maximum VCEsat: 2.2 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter terminals during conduction, leading to higher efficiency and lower power losses.

Package Shape: RECTANGULAR

Rectangular packages are easy to mount and provide better thermal characteristics for heat dissipation.

Nominal Turn Off Time (toff): 411 ns

Fast turn-off time enables quick switching of the IGBT, reducing switching losses and improving overall system efficiency.

Maximum Power Dissipation (Abs): 246 W

High power dissipation capability allows the IGBT to handle large amounts of power without overheating, ensuring reliable operation in high-power applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature range enables the IGBT to withstand elevated temperatures, making it suitable for a wide range of industrial applications.

Maximum Collector-Emitter Voltage: 1200 V

High breakdown voltage rating allows the IGBT to handle high voltage levels, providing robust performance in high-voltage applications.

Maximum Gate-Emitter Voltage: 20 V

The high gate-emitter voltage rating ensures reliable and safe operation of the IGBT by preventing gate breakdown under high voltage conditions.

Maximum Collector Current (IC): 88 A

High collector current rating allows the IGBT to handle large current flows, making it suitable for high-power applications that require high current handling capability.

Maximum Gate-Emitter Threshold Voltage: 6.3 V

The gate-emitter threshold voltage determines the turn-on voltage level, and a moderate threshold voltage helps in controlling the IGBT with precision.

Nominal Turn On Time (ton): 125 ns

Fast turn-on time ensures quick response of the IGBT, allowing for efficient power control and fast switching operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) V23990-K230-F40-/0B/-PM attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vincotech

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.3 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X39

No. of Elements:

6

No. of Terminals:

39

Maximum Operating Temperature:

175 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

411 ns

Nominal Turn On Time (ton):

125 ns

Maximum VCEsat:

2.2 V

Trade Compliance

V23990-K230-F40-/0B/-PM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vincotech

Vincotech is an established, reliable partner in designing and building power modules for motion control, renewable energy, and power supply applications, setting performance standards for both off-the-shelf and application specific solutions. A group company of Mitsubishi Electric Corporation staffed with around 800 people worldwide, Vincotech delivers fast, flexible and customer-focused solutions, service and support to empower customers' ideas. 2019 the company turnover was 159.7 million euros. Headquartered in Unterhaching near Munich, Germany, Vincotech also owns and operates a production site in Bicske, Hungary. The ISO14001-certified factory in Hungary develops and manufactures all power modules. Engineered to comply with the RoHS and REACH standard, these modules are subjected to a series of electrical and functional tests prior to packaging to ensure they fully satisfy Vincotech’s rigorous standards for quality. The name Vincotech stands for highest product reliability, excellent customer service, and flexible, competitive solutions, all of which culminate in outstanding customer satisfaction. A highly motivated and experienced engineering team at the R&D, supported by skilled technical service crews in all major regions, provides the underpinning for the company’s strong technology portfolio. Vincotech, your reliable partner of choice.

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