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VS-GT55LA120UX

Vishay Intertechnology

VS-GT55LA120UX by Vishay Intertechnology

VS-GT55LA120UX by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 68A max collector current. Ideal for power control applications, it features a built-in diode, 260ns turn off time, and 291W max power dissipation.

Median Price

$34.990

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 150 parts In-Stock

1+ parts

$28.570

100+ parts

$24.020

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150

$28.570

$24.020

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Mouser Electronics

USA . 238 parts In-Stock

1+ parts

$34.990

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238

$34.990

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DigiKey

USA . 192 parts In-Stock

1+ parts

$34.990

100+ parts

$22.907

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192

$34.990

$22.907

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Newark

USA . 96 parts In-Stock

1+ parts

$36.430

100+ parts

$30.650

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96

$36.430

$30.650

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Element14

Singapore . 150 parts In-Stock

1+ parts

$48.530

100+ parts

$40.840

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150

$48.530

$40.840

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EBV Elektronik

Germany . 80 parts In-Stock

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80

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Vyrian

USA . 7,201 parts In-Stock

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7,201

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Nova Conductors

Japan . 600 parts In-Stock

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600

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TME

Poland . 80 parts In-Stock

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$30.400

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80

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$30.400

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NAC Semi

USA . 60 parts In-Stock

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-

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$130.560

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60

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$130.560

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 50,089 parts In-Stock

1+ parts

$0.680

100+ parts

-

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50,089

$0.680

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Corohmni

South Africa . 41 parts In-Stock

1+ parts

$0.712

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41

$0.712

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AZTECH Wire

Italy . 51 parts In-Stock

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$11.131

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51

$11.131

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Ampacity Inc.

Singapore . 162 parts In-Stock

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$24.280

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162

$24.280

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Semicontronic

India . 127 parts In-Stock

1+ parts

$24.280

100+ parts

$23.673

1k+ parts

$23.552

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127

$24.280

$23.673

$23.552

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Continental Prestige Electronics

USA . 160 parts In-Stock

1+ parts

$32.880

100+ parts

$31.830

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160

$32.880

$31.830

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Microchip USA

USA . 9,574 parts In-Stock

1+ parts

$86.227

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9,574

$86.227

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Argo Parts USA

USA . 3,974 parts In-Stock

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3,974

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Bastille Electronics

Australia . 10 parts In-Stock

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10

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Overview

Upgrade your power control systems with the VS-GT55LA120UX by Vishay Intertechnology. As a leading manufacturer in the industry, Vishay Intertechnology delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for maximum performance and efficiency. With a single configuration and built-in diode, this transistor is perfect for applications requiring precise power control. Experience the value of increased power dissipation, fast turn-on/off times, and high voltage capabilities. Trust Vishay Intertechnology to provide reliable solutions for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and protection for the internal components of the IGBT, ensuring long-term reliability.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and saves space, making this IGBT ideal for power control applications.

Maximum Power Dissipation (Abs): 291 W

With a high maximum power dissipation, this IGBT can handle large power loads efficiently without overheating.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage allows this IGBT to be used in high voltage applications, providing versatility in power control.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand harsh environments and maintain performance under varying temperature conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-GT55LA120UX attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

260 ns

Nominal Turn On Time (ton):

19 ns

Trade Compliance

VS-GT55LA120UX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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