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VS-GT80DA120U

Vishay Intertechnology

VS-GT80DA120U by Vishay Intertechnology

VS-GT80DA120U by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 139A max collector current, and 658W max power dissipation. Ideal for power control applications, it features a single configuration with built-in diode and operates in temperatures ranging from -40°C to 150°C.

Median Price

$37.582

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 120 parts In-Stock

1+ parts

$37.190

100+ parts

$30.070

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120

$37.190

$30.070

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Element14

Singapore . 148 parts In-Stock

1+ parts

$37.582

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148

$37.582

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Farnell

UK . 148 parts In-Stock

1+ parts

$38.508

100+ parts

$31.498

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148

$38.508

$31.498

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DigiKey

USA . 488 parts In-Stock

1+ parts

$39.030

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$26.250

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488

$39.030

$26.250

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Mouser Electronics

USA . 132 parts In-Stock

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$39.030

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$27.630

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132

$39.030

$27.630

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RS (Exports)

UK . 160 parts In-Stock

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Verical

USA . 90 parts In-Stock

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$31.437

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90

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$31.437

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TTI

USA . 80 parts In-Stock

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-

100+ parts

$28.710

1k+ parts

$27.650

10k+ parts

$27.370

80

-

$28.710

$27.650

$27.370

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,792 parts In-Stock

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4,792

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Nova Conductors

Japan . 200 parts In-Stock

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ComSIT Distribution GmbH

Germany . 8 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 80 parts In-Stock

1+ parts

$1.503

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80

$1.503

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Corohmni

South Africa . 199 parts In-Stock

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$1.779

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199

$1.779

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Ampacity Inc.

Singapore . 100 parts In-Stock

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$24.510

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100

$24.510

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Continental Prestige Electronics

USA . 160 parts In-Stock

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$33.400

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$32.330

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160

$33.400

$32.330

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Microchip USA

USA . 6,121 parts In-Stock

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$87.147

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6,121

$87.147

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Argo Parts USA

USA . 3,384 parts In-Stock

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3,384

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Power up your projects with the VS-GT80DA120U Insulated Gate Bipolar Transistor by Vishay Intertechnology. Designed for power control applications, this N-CHANNEL transistor offers a single configuration with a built-in diode for added convenience. With a maximum collector-emitter voltage of 1200V and a maximum gate-emitter voltage of 20V, this high-quality transistor ensures reliable performance even in demanding environments. Trust Vishay Intertechnology for top-notch components that deliver value and efficiency every time.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs typically have lower on-state voltage drop and higher efficiency, making them a good choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against voltage spikes, enhancing the reliability of the power control system.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable operation in controlling large amounts of power.

Maximum Power Dissipation: 658 W

With a high maximum power dissipation, this IGBT can handle large power loads without overheating, ensuring long-term stability and performance.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage allows this IGBT to be used in high voltage applications, providing flexibility and versatility.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) VS-GT80DA120U attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Vishay Intertechnology

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

7 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

436 ns

Nominal Turn On Time (ton):

199 ns

Trade Compliance

VS-GT80DA120U Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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