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CM600DU-12NFH

Mitsubishi Electric

CM600DU-12NFH by Mitsubishi Electric

Mitsubishi Electric's CM600DU-12NFH is a N-CHANNEL IGBT with 2 elements, each with built-in diode. It has a max VCEsat of 2.7V and can handle up to 600A collector current. Ideal for power control applications, this IGBT operates at a max temperature of 150°C and has an isolated case connection.

Median Price

$220.420

Lifecycle Status

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Forefront Electronics and Design

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Vyrian

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Aztec Data Supply Inc.

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AZTECH Wire

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Continental Prestige Electronics

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Overview

Unlock the power of cutting-edge technology with the CM600DU-12NFH by Mitsubishi Electric. This insulated gate bipolar transistor (IGBT) offers unparalleled performance and reliability, making it an ideal choice for power control applications. With a maximum collector-emitter voltage of 600V and a maximum collector current of 600A, this device provides exceptional power dissipation capabilities. Trust in Mitsubishi Electric's renowned quality and craftsmanship to deliver superior results in your projects. Experience the difference with the CM600DU-12NFH – where innovation meets excellence.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their high efficiency and fast switching speeds, making them ideal for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for improved current handling and efficiency, making it suitable for high power applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance in controlling power circuits.

Maximum VCEsat: 2.7 V

Low VCEsat minimizes power losses and improves efficiency in power switching applications.

Maximum Power Dissipation (Abs): 2350 W

High power dissipation capability allows for handling high power levels without overheating.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating allows for safe operation in high voltage applications.

Maximum Gate-Emitter Voltage: 20 V

A moderate gate-emitter voltage rating provides reliable gate control for efficient switching.

Maximum Collector Current (IC): 600 A

High collector current rating allows for handling high current levels in power circuits.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and corrosion resistance for reliable connections.

Reference Standard: UL RECOGNIZED

UL recognition ensures compliance with safety and performance standards for reliable operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM600DU-12NFH attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

2.7 V

Trade Compliance

CM600DU-12NFH Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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