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IGW15N120H3FKSA1

Infineon Technologies

IGW15N120H3FKSA1 by Infineon Technologies

IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.

Median Price

$3.800

Lifecycle Status

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15

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1k+

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Rochester

USA . 5,445 parts In-Stock

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$2.400

100+ parts

$2.250

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$2.040

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5,445

$2.400

$2.250

$2.040

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Farnell

UK . 92 parts In-Stock

1+ parts

$3.800

100+ parts

$1.840

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$1.690

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92

$3.800

$1.840

$1.690

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Chip1Stop

Japan . 210 parts In-Stock

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$4.000

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$2.180

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210

$4.000

$2.180

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Arrow

USA . 187 parts In-Stock

1+ parts

$4.721

100+ parts

$2.238

1k+ parts

$1.772

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187

$4.721

$2.238

$1.772

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Element14

Singapore . 223 parts In-Stock

1+ parts

$6.010

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$3.630

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$3.100

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223

$6.010

$3.630

$3.100

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Verical

USA . 732 parts In-Stock

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$2.644

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$1.816

10k+ parts

$1.629

732

-

$2.644

$1.816

$1.629

Avnet

USA . 240 parts In-Stock

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-

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$1.179

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$1.087

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240

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$1.179

$1.087

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Distrelec

Netherlands . 15 parts In-Stock

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Digiode

USA . 120 parts In-Stock

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$2.280

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-

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120

$2.280

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Nova Conductors

Japan . 300 parts In-Stock

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$2.825

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300

$2.825

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Schukat

Germany . 64 parts In-Stock

1+ parts

$3.416

100+ parts

$2.397

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64

$3.416

$2.397

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TME

Poland . 45 parts In-Stock

1+ parts

$3.750

100+ parts

$2.130

1k+ parts

$2.010

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45

$3.750

$2.130

$2.010

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Vyrian

USA . 3,820 parts In-Stock

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3,820

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Sensible Micro Corp

USA . 2,650 parts In-Stock

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2,650

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Chip Stock

USA . 336 parts In-Stock

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336

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Distributors (Availability)

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Corohmni

South Africa . 238 parts In-Stock

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$1.090

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238

$1.090

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Aztec Data Supply Inc.

USA . 1,940 parts In-Stock

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$1.370

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$1.370

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Modulus Dynamics

Lithuania . 16,778 parts In-Stock

1+ parts

$1.513

100+ parts

$1.452

1k+ parts

$1.392

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16,778

$1.513

$1.452

$1.392

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Ampacity Inc.

Singapore . 525 parts In-Stock

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$1.720

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525

$1.720

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Corphita

USA . 203 parts In-Stock

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$2.160

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$2.160

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Bastille Electronics

Australia . 50 parts In-Stock

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$2.825

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$2.684

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$2.550

10k+ parts

$2.514

50

$2.825

$2.684

$2.550

$2.514

Argo Parts USA

USA . 4,600 parts In-Stock

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$2.825

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4,600

$2.825

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Semicontronic

India . 478 parts In-Stock

1+ parts

$3.730

100+ parts

$3.637

1k+ parts

$3.618

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478

$3.730

$3.637

$3.618

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Component Stockers USA

USA . 755 parts In-Stock

1+ parts

$4.090

100+ parts

$2.910

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755

$4.090

$2.910

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Continental Prestige Electronics

USA . 90 parts In-Stock

1+ parts

$4.340

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$2.440

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$2.060

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90

$4.340

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Microchip USA

USA . 9,796 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

USA . 706 parts In-Stock

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706

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Glotronic Ltd.

UK . 544 parts In-Stock

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544

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Overview

Unlock the power of efficient and reliable power control with the IGW15N120H3FKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Insulated Gate Bipolar Transistors that excel in a variety of applications. With a single configuration and N-channel polarity, this IGBT offers unparalleled performance with a nominal turn-off time of 370 ns and a maximum collector-emitter voltage of 1200 V. Trust in Infineon's expertise to provide you with a product that delivers exceptional value, benefits, and advantages for all your power control needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

Offers efficient power control capabilities, making it ideal for high-performance systems.

Configuration: SINGLE

Simplifies circuit design and installation, saving time and effort for users.

Transistor Application: POWER CONTROL

Allows for precise control over power output, ensuring optimal performance in power control applications.

Package Shape: RECTANGULAR

Offers a compact design for space-saving installation in a variety of devices.

Terminal Form: THROUGH-HOLE

Easy to install and secure connection in PCB boards, providing reliability in operation.

Nominal Turn Off Time (toff): 370 ns

Provides fast switching speed for efficient operation in power control systems.

No. of Terminals: 3

Simple and straightforward connection setup, reducing complexity in circuit design.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in place, ensuring stability and durability in operation.

Maximum Operating Temperature: 175 °C

Withstands high temperatures, suitable for demanding industrial environments.

Maximum Collector-Emitter Voltage: 1200 V

Handles high voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

Ensures reliability and high performance in various operating conditions.

Maximum Collector Current (IC): 30 A

Supports high current levels, making it suitable for power control applications.

Terminal Finish: TIN

Provides corrosion resistance for long-term reliability in operation.

Terminal Position: SINGLE

Simplifies installation and connection, ensuring ease of use for users.

Nominal Turn On Time (ton): 49 ns

Offers fast switching response for optimal power control and efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW15N120H3FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

370 ns

Nominal Turn On Time (ton):

49 ns

Trade Compliance

IGW15N120H3FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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