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SGW20N60

Infineon Technologies

SGW20N60 by Infineon Technologies

Infineon Technologies' SGW20N60 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 40A max collector current. Ideal for motor control applications, it has a rise time of 46ns, fall time of 65ns, and turn-off time of 313ns. Package style is flange mount with through-hole terminals.

Median Price

$2.695

Lifecycle Status

EOL

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7

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1k+

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Rochester

USA . 5,688 parts In-Stock

1+ parts

$2.710

100+ parts

$2.550

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$2.300

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5,688

$2.710

$2.550

$2.300

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DigiKey

USA . 5,688 parts In-Stock

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$2.680

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5,688

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$2.680

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Digiode

USA . 188 parts In-Stock

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$2.574

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188

$2.574

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Nova Conductors

Japan . 20 parts In-Stock

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$3.016

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$3.016

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DigiKey Marketplace

USA . 5,688 parts In-Stock

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Vyrian

USA . 5,638 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 25 parts In-Stock

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25

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Aztec Data Supply Inc.

USA . 3,185 parts In-Stock

1+ parts

$0.668

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3,185

$0.668

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$0.863

100+ parts

$0.820

1k+ parts

$0.820

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3,000

$0.863

$0.820

$0.820

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Corohmni

South Africa . 110 parts In-Stock

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$1.052

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110

$1.052

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Modulus Dynamics

Lithuania . 11,568 parts In-Stock

1+ parts

$1.997

100+ parts

$1.917

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$1.837

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11,568

$1.997

$1.917

$1.837

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Ampacity Inc.

Singapore . 5,221 parts In-Stock

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$2.280

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$2.280

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Corphita

USA . 235 parts In-Stock

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$2.439

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235

$2.439

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Aranea Global

USA . 1,000 parts In-Stock

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$2.956

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$2.838

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1,000

$2.956

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$2.838

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Argo Parts USA

USA . 2,441 parts In-Stock

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$3.016

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Continental Prestige Electronics

USA . 1,272 parts In-Stock

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$3.016

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$2.956

1,272

$3.016

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$2.956

Semicontronic

India . 5,400 parts In-Stock

1+ parts

$4.960

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$4.836

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$4.811

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5,400

$4.960

$4.836

$4.811

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Microchip USA

USA . 471 parts In-Stock

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$16.120

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471

$16.120

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A-Z Elektronik GmbH

Germany . 10,706 parts In-Stock

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Kepictronics

USA . 2,800 parts In-Stock

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Assy Fe

Spain . 1,120 parts In-Stock

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Authorized Procurement Solutions

USA . 480 parts In-Stock

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Overview

Experience the power and reliability of the SGW20N60 Insulated Gate Bipolar Transistor by Infineon Technologies. Designed with precision and quality in mind, this N-CHANNEL transistor is perfect for motor control applications. With a maximum collector-emitter voltage of 600V and a maximum gate-emitter threshold voltage of 5V, the SGW20N60 offers unparalleled performance and efficiency. Trust in Infineon Technologies to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the SGW20N60 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This choice of material provides good insulation properties, making the IGBT suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state resistance and higher efficiency, making them ideal for motor control applications.

Configuration: SINGLE

Single configuration IGBTs are easy to use and integrate into circuit designs, making them convenient for motor control applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, this IGBT ensures efficient and reliable performance in controlling motors.

Maximum Rise Time (tr): 46 ns

The fast rise time allows for quick switching speeds, essential for accurate motor control operations.

Package Shape: RECTANGULAR

The rectangular package shape offers compact and efficient mounting options, saving space in motor control systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, ensuring stable operation in motor control applications.

No. of Elements: 1

A single element design simplifies circuit layout and reduces complexity in motor control systems.

Maximum Fall Time (tf): 65 ns

The fast fall time allows for rapid turn-off, crucial for precise control of motor functions.

Nominal Turn Off Time (toff): 313 ns

The nominal turn-off time ensures smooth and controlled operation when turning off the IGBT during motor control.

No. of Terminals: 3

The three-terminal design simplifies connections and makes it easier to integrate the IGBT into motor control circuits.

Maximum Power Dissipation (Abs): 178 W

The high power dissipation capability ensures reliable performance and allows the IGBT to handle heavy loads in motor control applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides secure mechanical mounting, ideal for industrial motor control systems.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this IGBT can withstand harsh conditions and maintain performance in motor control applications.

Maximum Collector-Emitter Voltage: 600 V

The high collector-emitter voltage rating ensures the IGBT can handle high voltages commonly found in motor control systems.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making this IGBT a durable choice for motor control applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage rating ensures stable and safe operation of the IGBT in motor control circuits.

Maximum Collector Current (IC): 40 A

With a high collector current rating, this IGBT can handle large currents required for motor control applications.

Maximum Gate-Emitter Threshold Voltage: 5 V

The low gate-emitter threshold voltage allows for efficient and precise control of the IGBT in motor control systems.

Terminal Finish: TIN

The tin terminal finish provides corrosion resistance and ensures reliable connectivity for long-lasting performance in motor control applications.

Terminal Position: SINGLE

Single terminal position simplifies assembly and installation, making the IGBT user-friendly for motor control applications.

Case Connection: COLLECTOR

The collector case connection allows for easy integration into motor control circuits, providing effective control over motor functions.

Nominal Turn On Time (ton): 66 ns

The nominal turn-on time ensures quick activation of the IGBT, enabling efficient motor control operations.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGW20N60 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

65 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

46 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

313 ns

Nominal Turn On Time (ton):

66 ns

Trade Compliance

SGW20N60 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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