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IGW15T120FKSA1

Infineon Technologies

IGW15T120FKSA1 by Infineon Technologies

IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.

Median Price

$3.058

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 15 parts In-Stock

1+ parts

$4.100

100+ parts

-

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15

$4.100

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Chip1Stop

Japan . 60 parts In-Stock

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$5.950

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60

$5.950

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Rochester

USA . 51,398 parts In-Stock

1+ parts

-

100+ parts

$1.910

1k+ parts

$1.710

10k+ parts

$1.610

51,398

-

$1.910

$1.710

$1.610

Verical

USA . 43,823 parts In-Stock

1+ parts

-

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$2.138

10k+ parts

$2.013

43,823

-

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$2.138

$2.013

Flip Electronics (Authorized)

USA . 29,000 parts In-Stock

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29,000

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Arrow

USA . 330 parts In-Stock

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$2.498

10k+ parts

$2.463

330

-

-

$2.498

$2.463

RS (Exports)

UK . 10 parts In-Stock

1+ parts

-

100+ parts

$3.619

1k+ parts

$3.085

10k+ parts

-

10

-

$3.619

$3.085

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 737 parts In-Stock

1+ parts

$2.024

100+ parts

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737

$2.024

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Nova Conductors

Japan . 84 parts In-Stock

1+ parts

$2.565

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84

$2.565

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Schukat

Germany . 29 parts In-Stock

1+ parts

$2.896

100+ parts

$2.028

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-

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29

$2.896

$2.028

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Flip Electronics

USA . 29,000 parts In-Stock

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Vyrian

USA . 3,857 parts In-Stock

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3,857

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Rutronik

Germany . 180 parts In-Stock

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$2.130

1k+ parts

$1.880

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180

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$2.130

$1.880

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 25,155 parts In-Stock

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$1.372

100+ parts

$1.317

1k+ parts

$1.262

10k+ parts

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25,155

$1.372

$1.317

$1.262

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Ampacity Inc.

Singapore . 11,390 parts In-Stock

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$1.810

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$1.810

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Corphita

USA . 824 parts In-Stock

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$1.917

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824

$1.917

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Aranea Global

USA . 50 parts In-Stock

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$2.514

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$2.413

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50

$2.514

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$2.413

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Argo Parts USA

USA . 3,993 parts In-Stock

1+ parts

$2.565

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3,993

$2.565

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Continental Prestige Electronics

USA . 1 parts In-Stock

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$4.290

100+ parts

$2.520

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1

$4.290

$2.520

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Microchip USA

USA . 277 parts In-Stock

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$30.355

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277

$30.355

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Perfect Parts

USA . 569 parts In-Stock

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569

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Glotronic Ltd.

UK . 318 parts In-Stock

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318

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GreenTree Electronics

Israel . 60 parts In-Stock

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60

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Overview

Unlock the power of efficient power control with the IGW15T120FKSA1 from Infineon Technologies. As a leader in semiconductor technology, Infineon guarantees top-notch quality and reliability. This Insulated Gate Bipolar Transistor (IGBT) is the perfect solution for applications requiring high voltage and current capabilities. With its N-CHANNEL configuration and fast switching times, this IGBT delivers optimal performance for your power control needs. Trust in the value, benefits, and advantages that the IGW15T120FKSA1 brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the IGBT, ensuring a longer lifespan.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state resistance and higher efficiency compared to P-Channel IGBTs, making them ideal for high power applications.

Configuration: SINGLE

Single configuration IGBTs are easier to manage and control in power control applications, simplifying the overall circuit design.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT is optimized for efficient and reliable performance in controlling high power systems.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum collector-emitter voltage, this IGBT can handle high voltage applications with ease, ensuring reliable operation.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW15T120FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

720 ns

Nominal Turn On Time (ton):

85 ns

Trade Compliance

IGW15T120FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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