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SINGLE Insulated Gate Bipolar Transistors (IGBT) 238

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGW60H65F by STMicroelectronics

STGW60H65F

STMicroelectronics

STGW60H65F by STMicroelectronics is an N-CHANNEL IGBT with 650V VCE, 120A IC, and 360W Ptot. It's used for POWER CONTROL applications due to its fast turn-off time of 265ns and high operating temperature of 150 °C. The transistor comes in a RECTANGULAR package with THROUGH-HOLE terminals.

120 A

650 V

SINGLE

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

360 W

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

265 ns

96 ns

NGTG15N60S1EG by Onsemi

NGTG15N60S1EG

Onsemi

NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.

COLLECTOR

30 A

650 V

SINGLE

6.5 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

117 W

Insulated Gate BIP Transistors

NO

TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

440 ns

93 ns

STGW50HF60S by STMicroelectronics

STGW50HF60S

STMicroelectronics

STGW50HF60S by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 110A max collector current, and 284W max power dissipation. Ideal for power control applications due to its single configuration and fast turn-off time of 950ns.

110 A

600 V

SINGLE

5.7 V

20 V

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

284 W

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

950 ns

69 ns

IGC70T120T8RL by Infineon Technologies

IGC70T120T8RL

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XUUC-N5;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.07 V

STGD3NC120H-1 by STMicroelectronics

STGD3NC120H-1

STMicroelectronics

STGD3NC120H-1 by STMicroelectronics is an N-CHANNEL IGBT with 1200V VCE, 16A IC, and 105W power dissipation. Ideal for POWER CONTROL applications due to its low VCEsat of 2.8V and fast turn-off time of 342ns. Package style is IN-LINE with through-hole terminals.

COLLECTOR

16 A

1200 V

SINGLE

5 V

20 V

TO-251

R-PSIP-T3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

105 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

342 ns

18.5 ns

2.8 V

IGC70T120T8RQ by Infineon Technologies

IGC70T120T8RQ

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Terminal Position: UPPER;

1200 V

SINGLE

6.3 V

20 V

R-XUUC-N5

1

5

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

2.42 V

SIGC61T60NCX1SA1 by Infineon Technologies

SIGC61T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 75 A; Qualification: Not Qualified; Package Body Material: UNSPECIFIED;

75 A

600 V

SINGLE

R-XUUC-N4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

205 ns

90 ns

SIGC14T60NCX1SA7 by Infineon Technologies

SIGC14T60NCX1SA7

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Nominal Turn On Time (ton): 28 ns; Maximum Collector-Emitter Voltage: 600 V;

20 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

28 ns

SIGC11T60NCX1SA2 by Infineon Technologies

SIGC11T60NCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 130 ns; Package Body Material: UNSPECIFIED;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

130 ns

28 ns

SIGC121T60NR2CX1SA2 by Infineon Technologies

SIGC121T60NR2CX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 150 A; Nominal Turn Off Time (toff): 260 ns; Package Style (Meter): UNCASED CHIP;

150 A

600 V

SINGLE

S-XUUC-N

1

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

260 ns

155 ns

SIGC156T60NR2CX1SA4 by Infineon Technologies

SIGC156T60NR2CX1SA4

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Package Shape: SQUARE;

200 A

600 V

SINGLE

S-XUUC-N11

1

11

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

326 ns

229 ns

SIGC25T60SNCX1SA2 by Infineon Technologies

SIGC25T60SNCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 41 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

41 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

391 ns

78 ns

SIGC14T60SNCX1SA5 by Infineon Technologies

SIGC14T60SNCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 15 A; Terminal Form: NO LEAD; Maximum Operating Temperature: 150 Cel;

15 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SIGC18T60SNCX1SA3 by Infineon Technologies

SIGC18T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Terminal Form: NO LEAD; Qualification: Not Qualified;

20 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

313 ns

66 ns

SIGC81T60SNCX1SA1 by Infineon Technologies

SIGC81T60SNCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Nominal Turn Off Time (toff): 540 ns; Nominal Turn On Time (ton): 115 ns;

100 A

600 V

SINGLE

S-XUUC-N10

1

10

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

540 ns

115 ns

SIGC42T60SNCX1SA2 by Infineon Technologies

SIGC42T60SNCX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; No. of Terminals: 4; Transistor Application: POWER CONTROL;

50 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

460 ns

95 ns

SIGC11T60SNCX1SA1 by Infineon Technologies

SIGC11T60SNCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; JESD-30 Code: S-XUUC-N2; Transistor Application: POWER CONTROL;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

224 ns

40 ns

SIGC12T60SNCX1SA3 by Infineon Technologies

SIGC12T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Qualification: Not Qualified;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

329 ns

50 ns

SIGC07T60SNCX1SA3 by Infineon Technologies

SIGC07T60SNCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 6 A; JESD-30 Code: S-XUUC-N2; No. of Terminals: 2;

6 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SIGC42T60UNX1SA1 by Infineon Technologies

SIGC42T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON; Package Style (Meter): UNCASED CHIP;

50 A

600 V

SINGLE

S-XUUC-N3

1

3

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

370 ns

79 ns

SGB06N60ATMA1 by Infineon Technologies

SGB06N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

SGB20N60ATMA1 by Infineon Technologies

SGB20N60ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; No. of Elements: 1; Nominal Turn Off Time (toff): 313 ns;

LOW CONDUCTION LOSS

COLLECTOR

40 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

313 ns

66 ns

SGB02N120ATMA1 by Infineon Technologies

SGB02N120ATMA1

Infineon Technologies

SGB02N120ATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 6.2A. It has a nominal turn-off time of 375ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGP02N60XKSA1 by Infineon Technologies

SGP02N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;

LOW CONDUCTION LOSS

COLLECTOR

6 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

354 ns

34 ns

SGD02N120BUMA1 by Infineon Technologies

SGD02N120BUMA1

Infineon Technologies

Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGI02N120XKSA1 by Infineon Technologies

SGI02N120XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6.2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Collector-Emitter Voltage: 1200 V;

COLLECTOR

6.2 A

1200 V

SINGLE

TO-262AA

R-PSIP-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

375 ns

40 ns

SGP02N120XKSA1 by Infineon Technologies

SGP02N120XKSA1

Infineon Technologies

Infineon's SGP02N120XKSA1 is an N-CHANNEL IGBT with 1200V VCE, 6.2A IC, and 375ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration and SILICON material. Operates at up to 150°C with THROUGH-HOLE terminals in a RECTANGULAR package style.

COLLECTOR

6.2 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

375 ns

40 ns

SGP07N120XKSA1 by Infineon Technologies

SGP07N120XKSA1

Infineon Technologies

Infineon's SGP07N120XKSA1 is an N-CHANNEL IGBT transistor with 1200V max collector-emitter voltage and 16.5A max collector current. Ideal for power control applications, it has a turn-off time of 520ns and turn-on time of 56ns, operating up to 150°C.

COLLECTOR

16.5 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

520 ns

56 ns

IGP10N60TXKSA1 by Infineon Technologies

IGP10N60TXKSA1

Infineon Technologies

Infineon's IGP10N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. Ideal for power control applications, it has a turn-on time of 21ns and turn-off time of 296ns. The package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

20 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

296 ns

21 ns

SGD06N60BUMA1 by Infineon Technologies

SGD06N60BUMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 12 A; Nominal Turn On Time (ton): 41 ns; Qualification: Not Qualified;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-252AA

R-PSSO-G2

3

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

318 ns

41 ns

SGP06N60XKSA1 by Infineon Technologies

SGP06N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB; No. of Terminals: 3;

LOW CONDUCTION LOSS

COLLECTOR

12 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

318 ns

41 ns

IGB03N120H2ATMA1 by Infineon Technologies

IGB03N120H2ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 9.6 A; JESD-30 Code: R-PSSO-G2; No. of Terminals: 2;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

SGB07N120ATMA1 by Infineon Technologies

SGB07N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 16.5 A; Case Connection: COLLECTOR; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

16.5 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

520 ns

56 ns

SGB10N60AATMA1 by Infineon Technologies

SGB10N60AATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;

LOW CONDUCTION LOSS

COLLECTOR

20 A

600 V

SINGLE

TO-263AB

R-PSSO-G2

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

SINGLE

POWER CONTROL

SILICON

224 ns

40 ns

SGB15N120ATMA1 by Infineon Technologies

SGB15N120ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; No. of Terminals: 2; Package Shape: RECTANGULAR;

COLLECTOR

30 A

1200 V

SINGLE

TO-263AB

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

TIN

GULL WING

SINGLE

POWER CONTROL

SILICON

683 ns

68 ns

IGP03N120H2XKSA1 by Infineon Technologies

IGP03N120H2XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 9.6 A; Maximum Collector-Emitter Voltage: 1200 V; JEDEC-95 Code: TO-220AB;

COLLECTOR

9.6 A

1200 V

SINGLE

TO-220AB

R-PSFM-T3

NOT APPLICABLE

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

403 ns

16.1 ns

IGW03N120H2FKSA1 by Infineon Technologies

IGW03N120H2FKSA1

Infineon Technologies

IGW03N120H2FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 9.6A. It has a nominal turn-off time of 403ns and nominal turn-on time of 16.1ns, making it ideal for power control applications requiring fast switching capabilities at temperatures up to 150°C.

COLLECTOR

9.6 A

1200 V

SINGLE

TO-247AD

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

403 ns

16.1 ns

SGP15N60XKSA1 by Infineon Technologies

SGP15N60XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SGW15N60FKSA1 by Infineon Technologies

SGW15N60FKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V;

LOW CONDUCTION LOSS

COLLECTOR

31 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

315 ns

54 ns

SIGC25T60NCX1SA5 by Infineon Technologies

SIGC25T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 40 A; Qualification: Not Qualified; Nominal Turn On Time (ton): 29 ns;

40 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC18T60UNX1SA2 by Infineon Technologies

SIGC18T60UNX1SA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 20 A; No. of Elements: 1; Package Body Material: UNSPECIFIED;

20 A

600 V

SINGLE

R-XUUC-N2

1

2

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

100 ns

23.5 ns

SIGC07T60NCX1SA1 by Infineon Technologies

SIGC07T60NCX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Terminal Form: NO LEAD; No. of Elements: 1;

8 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

SIGC42T60NCX1SA5 by Infineon Technologies

SIGC42T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 70 A; JESD-30 Code: S-XUUC-N4; No. of Elements: 1;

70 A

600 V

SINGLE

S-XUUC-N4

1

4

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

160 ns

55 ns

SIGC18T60NCX1SA6 by Infineon Technologies

SIGC18T60NCX1SA6

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 30 A; Package Shape: SQUARE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

30 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC12T60NCX1SA5 by Infineon Technologies

SIGC12T60NCX1SA5

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 10 A; Nominal Turn Off Time (toff): 135 ns; Terminal Position: UPPER;

10 A

600 V

SINGLE

S-XUUC-N2

1

2

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

135 ns

29 ns

SIGC25T60UNX1SA1 by Infineon Technologies

SIGC25T60UNX1SA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 60 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel;

60 A

600 V

SINGLE

R-XUUC-N3

1

3

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

151 ns

29 ns

SIGC81T60NCX1SA3 by Infineon Technologies

SIGC81T60NCX1SA3

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 100 A; Package Style (Meter): UNCASED CHIP; Nominal Turn On Time (ton): 125 ns;

100 A

600 V

SINGLE

S-XUUC-N10

1

10

150 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

NO LEAD

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

235 ns

125 ns

IGW15N120H3FKSA1 by Infineon Technologies

IGW15N120H3FKSA1

Infineon Technologies

IGW15N120H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 370ns and a turn-on time of 49ns, making it suitable for power control applications requiring fast switching speeds. The transistor comes in a rectangular package style with through-hole terminals, ideal for flange mount installations at temperatures up to 175°C.

30 A

1200 V

SINGLE

TO-247

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

370 ns

49 ns