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IGP10N60TXKSA1

Infineon Technologies

IGP10N60TXKSA1 by Infineon Technologies

Infineon's IGP10N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 20A max collector current. Ideal for power control applications, it has a turn-on time of 21ns and turn-off time of 296ns. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

$1.651

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 300 parts In-Stock

1+ parts

$0.528

100+ parts

-

1k+ parts

$0.342

10k+ parts

$0.333

300

$0.528

-

$0.342

$0.333

Chip1Stop

Japan . 150 parts In-Stock

1+ parts

$1.570

100+ parts

$0.735

1k+ parts

$0.673

10k+ parts

-

150

$1.570

$0.735

$0.673

-

Element14

Singapore . 960 parts In-Stock

1+ parts

$1.651

100+ parts

$1.066

1k+ parts

$0.739

10k+ parts

$0.711

960

$1.651

$1.066

$0.739

$0.711

Mouser Electronics

USA . 790 parts In-Stock

1+ parts

$1.680

100+ parts

$0.729

1k+ parts

$0.473

10k+ parts

-

790

$1.680

$0.729

$0.473

-

DigiKey

USA . 503 parts In-Stock

1+ parts

$1.680

100+ parts

$0.714

1k+ parts

$0.563

10k+ parts

-

503

$1.680

$0.714

$0.563

-

Farnell

UK . 960 parts In-Stock

1+ parts

$1.803

100+ parts

$0.970

1k+ parts

$0.716

10k+ parts

$0.696

960

$1.803

$0.970

$0.716

$0.696

Newark

USA . 2,486 parts In-Stock

1+ parts

$1.880

100+ parts

$0.918

1k+ parts

$0.718

10k+ parts

$0.617

2,486

$1.880

$0.918

$0.718

$0.617

Rochester

USA . 779 parts In-Stock

1+ parts

-

100+ parts

$0.562

1k+ parts

$0.466

10k+ parts

$0.416

779

-

$0.562

$0.466

$0.416

Verical

USA . 300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.411

10k+ parts

-

300

-

-

$0.411

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 467 parts In-Stock

1+ parts

$0.582

100+ parts

-

1k+ parts

-

10k+ parts

-

467

$0.582

-

-

-

Nova Conductors

Japan . 54 parts In-Stock

1+ parts

$0.961

100+ parts

-

1k+ parts

-

10k+ parts

-

54

$0.961

-

-

-

TME

Poland . 44 parts In-Stock

1+ parts

$1.600

100+ parts

$1.080

1k+ parts

-

10k+ parts

-

44

$1.600

$1.080

-

-

Maritex

Poland . 191 parts In-Stock

1+ parts

$1.995

100+ parts

$1.296

1k+ parts

-

10k+ parts

-

191

$1.995

$1.296

-

-

Vyrian

USA . 5,924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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5,924

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 329 parts In-Stock

1+ parts

$0.520

100+ parts

-

1k+ parts

-

10k+ parts

-

329

$0.520

-

-

-

Corphita

USA . 325 parts In-Stock

1+ parts

$0.552

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$0.552

-

-

-

Argo Parts USA

USA . 1,002 parts In-Stock

1+ parts

$0.961

100+ parts

-

1k+ parts

-

10k+ parts

-

1,002

$0.961

-

-

-

Netroflash

USA . 500 parts In-Stock

1+ parts

$0.961

100+ parts

-

1k+ parts

-

10k+ parts

-

500

$0.961

-

-

-

Corohmni

South Africa . 35 parts In-Stock

1+ parts

$1.008

100+ parts

-

1k+ parts

-

10k+ parts

-

35

$1.008

-

-

-

Aztec Data Supply Inc.

USA . 186 parts In-Stock

1+ parts

$1.080

100+ parts

-

1k+ parts

-

10k+ parts

-

186

$1.080

-

-

-

Modulus Dynamics

Lithuania . 3,807 parts In-Stock

1+ parts

$1.606

100+ parts

$1.542

1k+ parts

$1.478

10k+ parts

-

3,807

$1.606

$1.542

$1.478

-

Continental Prestige Electronics

USA . 1,000 parts In-Stock

1+ parts

$1.750

100+ parts

$1.060

1k+ parts

$0.759

10k+ parts

-

1,000

$1.750

$1.060

$0.759

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Microchip USA

USA . 9,223 parts In-Stock

1+ parts

$12.090

100+ parts

-

1k+ parts

-

10k+ parts

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9,223

$12.090

-

-

-

Perfect Parts

USA . 4,088 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,088

-

-

-

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Overview

Unlock the power of efficient and reliable power control with the IGP10N60TXKSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers top-quality Insulated Gate Bipolar Transistors (IGBT) that are designed for high-performance applications. Whether you're looking to optimize power management in industrial equipment or enhance energy efficiency in renewable energy systems, this N-CHANNEL transistor offers unmatched value, benefits, and advantages. Trust Infineon Technologies to provide you with the innovative solutions you need to take your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the internal components of the IGBT.

Maximum Collector-Emitter Voltage: 600 V

The high maximum collector-emitter voltage of 600V allows for efficient power control in high voltage applications, making this IGBT suitable for a variety of power control tasks.

Maximum Collector Current (IC): 20 A

With a maximum collector current of 20A, this IGBT can handle high power loads effectively, ensuring reliable performance in power control applications.

Nominal Turn On Time (ton): 21 ns

The fast nominal turn on time of 21 ns allows for quick response and switching in power control operations, enhancing the efficiency and accuracy of the device.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGP10N60TXKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

296 ns

Nominal Turn On Time (ton):

21 ns

Trade Compliance

IGP10N60TXKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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