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IXYN100N120C3H1

Littelfuse

IXYN100N120C3H1 by Littelfuse

IXYN100N120C3H1 by Littelfuse is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 134A max collector current, and 690W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 265ns.

Median Price

$39.200

Lifecycle Status

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9

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DigiKey

USA . 1,082 parts In-Stock

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$26.389

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Mouser Electronics

USA . 216 parts In-Stock

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Element14

Singapore . 198 parts In-Stock

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Verical

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Nova Conductors

Japan . 600 parts In-Stock

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TME

Poland . 2 parts In-Stock

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NAC Semi

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Vyrian

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IBS Electronics

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Aztec Data Supply Inc.

USA . 2,908 parts In-Stock

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$0.699

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Corohmni

South Africa . 767 parts In-Stock

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Advanced Electronics

New Zealand . 299 parts In-Stock

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AZTECH Wire

Italy . 602 parts In-Stock

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Ampacity Inc.

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Semicontronic

India . 285 parts In-Stock

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Continental Prestige Electronics

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Microchip USA

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Authorized Procurement Solutions

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Argo Parts USA

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Glotronic Ltd.

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Netroflash

USA . 1,000 parts In-Stock

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$46.202

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Perfect Parts

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Overview

Looking for a reliable power control solution? Look no further than the IXYN100N120C3H1 by Littelfuse. As a leading manufacturer in the industry, Littelfuse ensures top-notch quality and performance in their Insulated Gate Bipolar Transistors (IGBT). With a maximum collector-emitter voltage of 1200V and a maximum power dissipation of 690W, this N-channel transistor is perfect for a variety of applications requiring efficient power control. Trust Littelfuse to provide you with a high-quality product that delivers exceptional value and benefits to meet your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection, making the transistor durable and reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower conduction losses and higher efficiency compared to P-Channel IGBTs, making them ideal for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and protects against reverse current, enhancing overall efficiency and reliability.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency in controlling high-power circuits.

Maximum Power Dissipation (Abs): 690 W

With a high maximum power dissipation, this IGBT can handle high power levels without overheating, making it suitable for demanding applications.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, allowing for reliable performance in a variety of operating conditions.

Maximum Collector-Emitter Voltage: 1200 V

Capable of handling high voltage levels, making it suitable for high-power applications where voltage spikes may occur.

Maximum Collector Current (IC): 134 A

High collector current rating allows for handling large currents, making it suitable for high-power applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXYN100N120C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

AVALANCHE RATED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

265 ns

Nominal Turn On Time (ton):

122 ns

Trade Compliance

IXYN100N120C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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