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IXDH30N120D1

IXYS Corporation

IXDH30N120D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 435 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V;

Median Price

$8.580

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

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$8.580

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Vyrian

USA . 1,333 parts In-Stock

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Inventory MP

USA . 10 parts In-Stock

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Bristol Electronics

USA . 10 parts In-Stock

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LittleDiode

UK . 3 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 913 parts In-Stock

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$1.050

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$1.050

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$1.634

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$1.487

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$1.340

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$1.634

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AZTECH Wire

Italy . 211 parts In-Stock

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$8.443

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Continental Prestige Electronics

USA . 4,294 parts In-Stock

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$8.580

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$8.408

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Bastille Electronics

Australia . 450 parts In-Stock

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$8.580

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$8.151

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$7.636

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$8.580

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Component Stockers USA

USA . 26 parts In-Stock

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$9.760

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Microchip USA

USA . 251 parts In-Stock

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$31.220

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Argo Parts USA

USA . 4,748 parts In-Stock

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Perfect Parts

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDH30N120D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW SWITCHING LOSSES

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

170 ns

Trade Compliance

IXDH30N120D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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