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IXDH30N120

IXYS Corporation

IXDH30N120 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Nominal Turn On Time (ton): 170 ns;

Median Price

$18.676

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 46 parts In-Stock

1+ parts

$14.412

100+ parts

-

1k+ parts

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10k+ parts

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46

$14.412

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-

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NAC Semi

USA . 37 parts In-Stock

1+ parts

-

100+ parts

$22.940

1k+ parts

-

10k+ parts

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37

-

$22.940

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-

Bristol Electronics

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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10

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 50 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

$0.061

10k+ parts

$0.061

50

$0.090

-

$0.061

$0.061

Perfect Parts

USA . 259 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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259

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Authorized Procurement Solutions

USA . 100 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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100

-

-

-

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GreenTree Electronics

Israel . 95 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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95

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDH30N120 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW SWITCHING LOSSES

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

170 ns

Trade Compliance

IXDH30N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-562-7279, 5961015627279

NIIN

015627279

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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