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IXBK55N300

Littelfuse

IXBK55N300 by Littelfuse

IXBK55N300 by Littelfuse is an N-CHANNEL IGBT with 3.2V VCEsat, 130A IC, and 625W power dissipation. Ideal for POWER CONTROL applications, it features a 3000V VCE max and -55 to 150°C operating temp range in a RECTANGULAR package with THROUGH-HOLE terminals.

Median Price

$105.232

Lifecycle Status

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DigiKey

USA . 3,171 parts In-Stock

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$101.010

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$97.057

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Newark

USA . 564 parts In-Stock

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$104.040

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$86.180

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Verical

USA . 11 parts In-Stock

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$106.424

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$106.424

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Element14

Singapore . 342 parts In-Stock

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$108.874

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$91.780

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TME

Poland . 11 parts In-Stock

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$97.460

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Nova Conductors

Japan . 870 parts In-Stock

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$104.300

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$104.300

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IBS Electronics

USA . 16,925 parts In-Stock

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$124.371

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$118.443

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Ozdisan Elektronik

Türkiye . 25 parts In-Stock

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$142.757

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Vyrian

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NAC Semi

USA . 20 parts In-Stock

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$284.430

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Electronics Depot

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Andel Nordic

Denmark . 369 parts In-Stock

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$0.340

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$0.236

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$0.236

369

$0.340

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$0.236

Corohmni

South Africa . 786 parts In-Stock

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$0.673

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$0.673

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Aztec Data Supply Inc.

USA . 870 parts In-Stock

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$1.790

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$1.790

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Ampacity Inc.

Singapore . 1,343 parts In-Stock

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$74.270

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Continental Prestige Electronics

USA . 250 parts In-Stock

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$89.720

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$89.720

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Component Stockers USA

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$103.020

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$103.070

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Netroflash

USA . 1,000 parts In-Stock

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$104.300

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Semicontronic

India . 1,264 parts In-Stock

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$161.650

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$157.609

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$156.800

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$161.650

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Microchip USA

USA . 3,676 parts In-Stock

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$164.970

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iodParts Technologies Inc.

India . 6,481 parts In-Stock

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Argo Parts USA

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Perfect Parts

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Authorized Procurement Solutions

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Overview

Experience the next level of power control with the Littelfuse IXBK55N300 Insulated Gate Bipolar Transistor. Manufactured by a trusted industry leader, this N-CHANNEL transistor offers unparalleled quality and reliability for a wide range of applications. With a maximum collector-emitter voltage of 3000V and a maximum collector current of 130A, this transistor provides exceptional performance in demanding environments. Upgrade your power control systems today and discover the superior value and benefits that the Littelfuse IXBK55N300 can offer to you.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable and cost-effective, making the IGBT easy to handle and install in various applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have better performance characteristics compared to P-channel IGBTs, providing efficient power control in high-power applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode helps in handling reverse current and provides protection against voltage spikes, enhancing the reliability of the IGBT.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT ensures efficient and reliable operation in controlling high power loads.

Maximum VCEsat: 3.2 V

Low VCEsat helps in minimizing power loss and improving efficiency, making this IGBT suitable for high power applications where efficiency is crucial.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and fitting in various electronic systems, making it versatile for different applications.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easier soldering, ensuring reliable connectivity in electronic circuits.

Nominal Turn Off Time (toff): 475 ns

Fast turn-off time helps in reducing switching losses and improving overall efficiency, making this IGBT ideal for high-frequency power control applications.

No. of Terminals: 3

The 3-terminal design simplifies the connection setup and provides easy integration into electronic circuits, increasing the ease of use of this IGBT.

Maximum Power Dissipation (Abs): 625 W

With a high power dissipation capacity, this IGBT can handle large power loads without overheating, ensuring reliable performance in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount package style allows for secure mounting on a heatsink for efficient heat dissipation, ensuring prolonged device lifespan and reliability in high-power applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature tolerance makes this IGBT suitable for use in harsh environments or applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 3000 V

High collector-emitter voltage rating allows this IGBT to handle high voltage loads, making it suitable for use in high-power applications.

Transistor Element Material: SILICON

Silicon is a common and reliable material for transistor elements, providing stable performance and durability in various operating conditions.

Maximum Gate-Emitter Voltage: 25 V

The high maximum gate-emitter voltage rating ensures reliable gate control and protection against voltage spikes, enhancing the overall performance of this IGBT.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature tolerance allows this IGBT to operate efficiently in cold environments or applications where temperature drops are expected.

Maximum Collector Current (IC): 130 A

High collector current rating allows this IGBT to handle large current loads, making it suitable for high-power applications where current handling capacity is crucial.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures efficient gate control and reduces power losses, enhancing the overall performance of this IGBT in power control applications.

Terminal Finish: TIN SILVER COPPER

The terminal finish provides corrosion resistance and ensures reliable electrical connections, increasing the durability and lifespan of this IGBT.

Terminal Position: SINGLE

Single terminal position simplifies the connection setup and integration into electronic circuits, providing ease of use and installation for this IGBT.

Case Connection: COLLECTOR

The collector case connection allows for easy and efficient heat dissipation, ensuring optimal performance and reliability of this IGBT in high-power applications.

Maximum Time At Peak Reflow Temperature (s): 10

With a short time at peak reflow temperature, this IGBT can withstand reflow soldering processes without compromising its performance or reliability.

Peak Reflow Temperature °C: 260

The high peak reflow temperature tolerance allows this IGBT to withstand soldering processes without damage, ensuring reliable performance in assembly and manufacturing.

Nominal Turn On Time (ton): 637 ns

Fast turn-on time ensures quick response and efficient power control, making this IGBT suitable for high-frequency switching applications where timing is critical.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXBK55N300 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

3000 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

25 V

JEDEC-95 Code:

TO-264AA

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

475 ns

Nominal Turn On Time (ton):

637 ns

Maximum VCEsat:

3.2 V

Trade Compliance

IXBK55N300 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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