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APT150GN120JDQ4

Microchip Technology

APT150GN120JDQ4 by Microchip Technology

Microchip Technology's APT150GN120JDQ4 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 215A, and Ptot of 625W. Ideal for power control applications due to its fast turn-off time (toff) of 955ns and high collector-emitter voltage rating of 1200V. Package style is flange mount with isolated case connection.

Median Price

$68.160

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 70 parts In-Stock

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$62.040

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$60.350

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$60.350

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Mouser Electronics

USA . 11 parts In-Stock

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$68.160

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$58.850

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11

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$58.850

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DigiKey

USA . 6 parts In-Stock

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$68.160

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$55.300

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6

$68.160

$55.300

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Distributors (In-Stock)

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Vyrian

USA . 2,551 parts In-Stock

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VNN

France . 2,143 parts In-Stock

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Flip Electronics

USA . 700 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 3,707 parts In-Stock

1+ parts

$0.773

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$0.773

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Corohmni

South Africa . 662 parts In-Stock

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$1.014

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$1.014

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AZTECH Wire

Italy . 347 parts In-Stock

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$19.263

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Semicontronic

India . 255 parts In-Stock

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$51.540

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$50.252

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$49.994

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$51.540

$50.252

$49.994

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Ampacity Inc.

Singapore . 126 parts In-Stock

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$51.540

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Microchip USA

USA . 9,664 parts In-Stock

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$156.768

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QUARKTWIN TECHNOLOGY LTD

USA . 25,995 parts In-Stock

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West Coast Incorporated

USA . 6,061 parts In-Stock

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Argo Parts USA

USA . 2,702 parts In-Stock

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Continental Prestige Electronics

USA . 2,690 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Metaverse IC Inc.

Canada . 228 parts In-Stock

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Robosynatics

Brazil . 200 parts In-Stock

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$1.859

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$1.721

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$1.721

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$1.859

$1.721

$1.721

Lucentia Tech

USA . 200 parts In-Stock

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$1.859

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$1.721

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$1.721

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$1.721

Perfect Parts

USA . 71 parts In-Stock

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Overview

Elevate your power control capabilities with the APT150GN120JDQ4 by Microchip Technology. Crafted with precision and quality in mind, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled performance in a range of applications. With a maximum collector-emitter voltage of 1200V and a maximum collector current of 215A, this N-Channel transistor provides reliable power control with a nominal turn-on time of just 120ns. Experience the value and benefits of this single configuration transistor with a built-in diode, designed to optimize efficiency and performance in your projects. Trust Microchip Technology for cutting-edge solutions that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses and higher switching speeds than P-channel IGBTs, making them suitable for high power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for freewheeling current flow in the circuit, improving efficiency and reducing the risk of voltage spikes in power control applications.

Maximum VCEsat: 2.1 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter terminals, leading to lower power dissipation and higher efficiency.

Nominal Turn Off Time (toff): 955 ns

Fast turn-off time ensures quick switching and reduces power losses during the switching process, making the product suitable for high frequency power control applications.

Maximum Power Dissipation (Abs): 625 W

High power dissipation rating allows the product to handle large amounts of power without overheating, ensuring reliable performance in demanding applications.

Maximum Operating Temperature: 150 °C

High operating temperature range allows the product to operate in harsh environments without compromising its performance, increasing its versatility and reliability.

Maximum Collector-Emitter Voltage: 1200 V

High collector-emitter voltage rating provides ample headroom for handling high voltage spikes and surges, making the product suitable for high voltage power control applications.

Maximum Collector Current (IC): 215 A

High collector current rating allows the product to handle large current flows, making it suitable for high power applications where high current is required.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT150GN120JDQ4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microchip Technology

Specs

Additional Features:

HIGH RELIABILITY, LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

955 ns

Nominal Turn On Time (ton):

120 ns

Maximum VCEsat:

2.1 V

Trade Compliance

APT150GN120JDQ4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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