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SK20DGDL065ET

Semikron International

SK20DGDL065ET by Semikron International

SK20DGDL065ET by Semikron International is an N-CHANNEL IGBT with 600V VCEsat, 24A IC, and 190ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.

Median Price

$78.170

Lifecycle Status

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3

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< 1k

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Nova Conductors

Japan . 100 parts In-Stock

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$78.170

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100

$78.170

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Vyrian

USA . 152 parts In-Stock

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152

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ACDS - Activité Composants Distribution Service

France . 100 parts In-Stock

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100

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 408 parts In-Stock

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$12.183

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408

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Continental Prestige Electronics

USA . 1,207 parts In-Stock

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$78.170

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$76.607

1,207

$78.170

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$76.607

Argo Parts USA

USA . 4,614 parts In-Stock

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4,614

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Netroflash

USA . 1,000 parts In-Stock

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$76.607

1k+ parts

$74.261

10k+ parts

$72.698

1,000

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$76.607

$74.261

$72.698

Overview

Unlock the power of efficiency and reliability with the SK20DGDL065ET by Semikron International. As a leading manufacturer in the industry, Semikron International delivers top-quality Insulated Gate Bipolar Transistors (IGBT) designed for power control applications. With a maximum VCEsat of 2.5V and a complex configuration, this transistor offers unparalleled performance. Whether you're working on industrial machinery or renewable energy systems, the SK20DGDL065ET provides the perfect solution for your needs. Trust Semikron International for cutting-edge technology and superior products that will elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and durability, making the product suitable for high-power applications.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs have lower on-state voltage drop and faster switching times, leading to improved efficiency and performance.

Configuration: COMPLEX

Complex configurations allow for more advanced power control capabilities, making this product versatile and suitable for a wide range of applications.

Maximum VCEsat: 2.5 V

The low VCEsat value indicates minimal power dissipation and improved efficiency during operation.

Nominal Turn Off Time (toff): 190 ns

The fast turn-off time ensures quick switching transitions, enhancing the product's performance in power control applications.

No. of Terminals: 23

Having a higher number of terminals allows for more connections and control options, making this product suitable for complex circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product can withstand demanding thermal conditions, improving its reliability in harsh environments.

Maximum Collector-Emitter Voltage: 600 V

The high VCE max rating enables the product to handle high voltage levels, making it suitable for power control applications.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage rating ensures safe and reliable operation of the IGBT, protecting it from potential overvoltage conditions.

Maximum Collector Current (IC): 24 A

With a high collector current rating, this product can handle higher power levels and currents, making it suitable for power control applications.

Nominal Turn On Time (ton): 49 ns

The fast turn-on time allows for quick response and switching speeds, improving the product's efficiency and performance.

Reference Standard: IEC-60747-1

Compliance with IEC standards ensures quality and reliability, making this product a trusted choice for industrial and commercial applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SK20DGDL065ET attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Additional Features:

ULTRA FAST

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X23

JESD-609 Code:

e3/e4

No. of Elements:

7

No. of Terminals:

23

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

IEC-60747-1

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN/SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

190 ns

Nominal Turn On Time (ton):

49 ns

Maximum VCEsat:

2.5 V

Trade Compliance

SK20DGDL065ET Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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