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SGP15N120XKSA1

Infineon Technologies

SGP15N120XKSA1 by Infineon Technologies

SGP15N120XKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 683ns toff. It's used for POWER CONTROL applications due to its SILICON material and SINGLE configuration in a PLASTIC/EPOXY package.

Median Price

$2.996

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.163

10k+ parts

$2.975

4,500

-

-

$3.163

$2.975

Rochester

USA . 4,500 parts In-Stock

1+ parts

-

100+ parts

$2.830

1k+ parts

$2.530

10k+ parts

$2.380

4,500

-

$2.830

$2.530

$2.380

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$4.330

100+ parts

-

1k+ parts

-

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500

$4.330

-

-

-

Vyrian

USA . 8,559 parts In-Stock

1+ parts

-

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-

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8,559

-

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-

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Digiode

USA . 600 parts In-Stock

1+ parts

-

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600

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,523 parts In-Stock

1+ parts

$0.690

100+ parts

-

1k+ parts

-

10k+ parts

-

2,523

$0.690

-

-

-

Modulus Dynamics

Lithuania . 17,030 parts In-Stock

1+ parts

$0.912

100+ parts

$0.876

1k+ parts

$0.839

10k+ parts

-

17,030

$0.912

$0.876

$0.839

-

Corohmni

South Africa . 392 parts In-Stock

1+ parts

$1.687

100+ parts

-

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-

10k+ parts

-

392

$1.687

-

-

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Continental Prestige Electronics

USA . 959 parts In-Stock

1+ parts

$2.570

100+ parts

$2.220

1k+ parts

-

10k+ parts

-

959

$2.570

$2.220

-

-

Argo Parts USA

USA . 2,211 parts In-Stock

1+ parts

$4.330

100+ parts

-

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2,211

$4.330

-

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$4.330

100+ parts

$4.243

1k+ parts

-

10k+ parts

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1,000

$4.330

$4.243

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AZTECH Wire

Italy . 859 parts In-Stock

1+ parts

$9.230

100+ parts

-

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859

$9.230

-

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Microchip USA

USA . 4,392 parts In-Stock

1+ parts

$28.187

100+ parts

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4,392

$28.187

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Ampacity Inc.

Singapore . 796 parts In-Stock

1+ parts

$36.050

100+ parts

-

1k+ parts

-

10k+ parts

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796

$36.050

-

-

-

Semicontronic

India . 974 parts In-Stock

1+ parts

$47.050

100+ parts

$45.874

1k+ parts

$45.638

10k+ parts

-

974

$47.050

$45.874

$45.638

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

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3,000

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Corphita

USA . 888 parts In-Stock

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888

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Perfect Parts

USA . 795 parts In-Stock

1+ parts

-

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795

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-

Overview

Unleash the power of innovation with the SGP15N120XKSA1 from Infineon Technologies. As a leader in the industry, Infineon ensures top-notch quality and reliability in their Insulated Gate Bipolar Transistors (IGBT). Whether you're looking to optimize power control in industrial applications or enhance performance in your electronic devices, this N-CHANNEL transistor guarantees seamless operation and efficiency. With a maximum collector-emitter voltage of 1200V and a nominal turn-off time of 683ns, the SGP15N120XKSA1 offers unparalleled value and benefits to customers seeking cutting-edge solutions. Upgrade your systems today with Infineon's superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside the transistor, increasing its durability.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs are known for their lower conduction losses and faster switching speeds, making them ideal for power control applications.

Configuration: SINGLE

Simplifies the circuit design and reduces the risk of interferences or malfunctions.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring efficient and reliable operation in such scenarios.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures without compromising performance, making it suitable for a variety of industrial environments.

Maximum Collector-Emitter Voltage: 1200 V

Offers a high voltage rating, allowing the transistor to handle high power levels safely.

Maximum Collector Current (IC): 30 A

Capable of handling high current loads, making it suitable for applications that require substantial power output.

Terminal Finish: TIN

Provides good conductivity and corrosion resistance, ensuring reliable electrical connections.

Nominal Turn On Time (ton): 68 ns

Fast turn-on time enables quick switching operations, improving efficiency and reducing power losses.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGP15N120XKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

683 ns

Nominal Turn On Time (ton):

68 ns

Trade Compliance

SGP15N120XKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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