Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 150 Cel; Terminal Form: THROUGH-HOLE;
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$5.525
AZTECH Wire
$20.850
Insulated Gate Bipolar Transistors (IGBT) SGP10N60AXKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Additional Features:
Case Connection:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
JEDEC-95 Code:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
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Nominal Turn Off Time (toff):
Nominal Turn On Time (ton):
SGP10N60AXKSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
2N7002-7-F
Diodes Incorporated
Diodes Inc. 2N7002-7-F is a N-channel FET with 60V DS breakdown voltage, 0.115A max drain current, and 13.5 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and operates up to 150°C.
BAV99
Cheng-yi Electronic
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
DS18B20Z
Dallas Semiconductor
TEMPERATURE SENSOR,SWITCH/DIGITAL OUTPUT,SERIAL; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Shape or Style: RECTANGULAR; Housing: PLASTIC; Maximum Accuracy (Cel): 0.50;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
BSS138
Changzhou Galaxy Century Microelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Minimum DS Breakdown Voltage: 50 V; Maximum Operating Temperature: 150 Cel;
LM107H
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Code: TO-99; Package Shape: ROUND;
1N4148
International Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BSS138PS,115
NXP Semiconductors
NXP Semiconductors' BSS138PS,115 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it features a 1.6 ohm max on-resistance and operates in enhancement mode. The transistor comes in a small outline package with GULL WING terminals, making it suitable for surface mount designs.
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
Hitachi
Daco Semiconductor
SS14
Fairchild Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Plessey Semiconductors Discrete Components Div
SMBJ18CA
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Pro-an Electronic
1N4148WS
Jiangsu Changjiang Electronics Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ISO1050DUBR
ISO1050DUBR by Texas Instruments is a network interface IC with 8 terminals, operating from -55 to 105°C. It features a small outline package, nickel palladium gold finish, and gull wing terminal form. Ideal for telecom applications requiring a 5V supply voltage and peak reflow temperature of 260°C.
Changzhou Starsea Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
STM32H753ZIT6
STMicroelectronics
STM32H753ZIT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20-Ch 16-Bit ADC and 2-Ch 12-Bit DAC channels. With a clock frequency of up to 48 MHz, it is ideal for industrial applications requiring CAN, Ethernet, and USB connectivity. This microcontroller operates b/w -40°C to +85°C temperature range.
2N7002
Teledyne Components
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; No. of Terminals: 3;
APT75GP120JDQ3
Microchip Technology
APT75GP120JDQ3 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. It is designed for motor control applications, featuring a nominal turn off time of 360ns and a max operating temperature of 150°C.
STGB10NC60KDT4
STGB10NC60KDT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 242ns turn-off time. It is used for power control applications, has a small outline package style, and operates at a max temperature of 150°C.
IGW30N60H3FKSA1
Infineon Technologies
IGW30N60H3FKSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 60A. It has a nominal turn-off time of 262ns and nominal turn-on time of 50ns, making it ideal for power control applications requiring fast switching speeds. The transistor's package style is flange mount with through-hole terminals, suitable for high-power applications in industrial settings.
IGP15N60TXKSA1
Infineon's IGP15N60TXKSA1 is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage and 30A max collector current. It has a turn-off time of 291ns and turn-on time of 32ns, making it ideal for power control applications. The transistor comes in a plastic/epoxy package with through-hole terminals and can operate at temperatures up to 175°C.
IXGT30N120B3D1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Package Body Material: PLASTIC/EPOXY;
FS150R12KT4P_B11
Infineon FS150R12KT4P_B11 IGBT, N-Channel type, with VCEsat of 2.1V and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and renewable energy systems due to its low turn-off time of 605ns. Operating temperature range from -40°C to 150°C ensures reliability in various environments.
IRG7PH42UD1MPBF
Infineon's IRG7PH42UD1MPBF is an N-CHANNEL IGBT with 43ns fall time, 313W power dissipation, and 1200V collector-emitter voltage. Ideal for high-power applications requiring up to 85A collector current, such as industrial motor drives and renewable energy systems.
CM200TX-24T
Mitsubishi Electric
Mitsubishi Electric's CM200TX-24T is an N-CHANNEL IGBT with 1200V VCEsat, 200A IC, and 1040W power dissipation. Ideal for POWER CONTROL applications, it features a complex configuration in a rectangular package with 35 terminals. Operating b/w -40 to 150 °C, it offers fast rise/fall times of 200/500 ns.
STGW40N120KD
STGW40N120KD by STMicroelectronics is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 240W max power dissipation. Ideal for motor control applications due to its built-in diode and fast turn-off time of 564ns. Package style is flange mount with through-hole terminals.
FD16001200R17HP4B2BOSA2
Infineon's FD16001200R17HP4B2BOSA2 IGBT features N-CHANNEL polarity, COMPLEX configuration, and 1700V max. collector-emitter voltage. Ideal for POWER CONTROL applications with 1710ns turn-off time and 650ns turn-on time. Package style is FLANGE MOUNT with 9 terminals in RECTANGULAR shape.
CM450DX-24T
The Mitsubishi Electric CM450DX-24T is an N-channel IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.05V and can handle up to 450A collector current. Ideal for power control applications with a max power dissipation of 2500W and operating temperature range from -40°C to 150°C.
IXYH50N120C3D1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 105 A; Terminal Finish: MATTE TIN;
FGD5T120SH
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Collector Current (IC): 10 A; Case Connection: COLLECTOR;
SKM300GB12T4
Semikron International
SKM300GB12T4 by Semikron is an N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a VCEsat of 2.1V, IC of 422A, and toff of 540ns. Ideal for POWER CONTROL applications, it operates b/w -40°C to 175°C with a VCE max of 1200V.
SGD02N120BUMA1
Infineon's SGD02N120BUMA1 is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 6.2A max collector current. Ideal for power control applications, it has a turn-off time of 375ns and turn-on time of 40ns. This surface-mount transistor in a rectangular package is designed for high-power operations up to 150°C.
IRGB4061DPBF
International Rectifier
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 206 W; Maximum Collector Current (IC): 36 A; Qualification: Not Qualified;
FGH40N60UFDTU
Onsemi
FGH40N60UFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 80A IC, and 290W Ptot. Ideal for power control applications due to its fast tf of 100ns and toff of 190ns. The package style is flange mount with a max operating temperature of 150°C.
IRGP50B60PD1PBF
IRGP50B60PD1PBF by Infineon is an N-CHANNEL IGBT with a max voltage of 600V and current of 75A. It has a power dissipation of 390W, rise time of 20ns, and fall time of 20ns. Ideal for power control applications due to its fast switching speed and high collector-emitter voltage capability.
IXGA20N120A3
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
FZ600R17KE3S4HOSA1
Infineon Technologies' FZ600R17KE3S4HOSA1 is an N-CHANNEL IGBT with 1700V VCE, 840A IC, and 3150W power dissipation. Ideal for power control applications, it features a built-in diode, UL approval, and operates b/w -40 to 125°C.
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SGP10N60RUFDTU
SGP10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 75W Pd. Ideal for MOTOR CONTROL applications due to its single configuration with built-in diode. Features fast switching times: ton of 49ns and tf of 220ns.
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; Additional Features: LOW CONDUCTION LOSS, HIGH SPEED SWITCHING;
SGP15N120XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Nominal Turn Off Time (toff): 683 ns; Terminal Position: SINGLE;
SGP15N120XK
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 30 A; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED;
SGP13N60UFD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Package Body Material: PLASTIC/EPOXY;
SGP13N60UFDTU
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 13 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: THROUGH-HOLE;
SGP10N60RUFD
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 16 A; JESD-30 Code: R-PSFM-T3;
SGP15N60
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 138 W; Maximum Collector Current (IC): 31 A; Case Connection: COLLECTOR;
SGP15N60HKSA1
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; No. of Terminals: 3; Maximum Collector-Emitter Voltage: 600 V;
SGP15N60XKSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SGP15N60XK
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 31 A; Terminal Position: SINGLE; Nominal Turn On Time (ton): 54 ns;
SGP10N60
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 104 W; Maximum Collector Current (IC): 21 A; No. of Terminals: 3;
SGP10N60AHKSA1
N-Channel; Maximum Gate-Emitter Threshold Voltage: 5 V; Nominal Turn On Time (ton): 49 ns; Nominal Turn Off Time (toff): 243 ns; Transistor Element Material: SILICON; Maximum Collector-Emitter Voltage: 600 V;
SGP10N60AXK
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 20 A; Case Connection: COLLECTOR; JEDEC-95 Code: TO-220AB;
SGP10N60A
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 92 W; Maximum Collector Current (IC): 20 A; Terminal Form: THROUGH-HOLE;
SGP15N120
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 198 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V;
SGP15N120HKSA1
N-Channel; Nominal Turn Off Time (toff): 779 ns; Maximum Gate-Emitter Threshold Voltage: 5 V; Nominal Turn On Time (ton): 54 ns; Minimum Operating Temperature: -55 Cel; Maximum Gate-Emitter Voltage: 20 V;
SGP13N60UF
Samsung
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 13 A; Terminal Form: THROUGH-HOLE;
SGP15N60RUF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 24 A; No. of Terminals: 3; Additional Features: HIGH SPEED SWITCHING;
Siemens
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 21 A; Nominal Turn Off Time (toff): 329 ns; Maximum Collector-Emitter Voltage: 600 V;
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