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IXGN50N120C3H1

Littelfuse

IXGN50N120C3H1 by Littelfuse

IXGN50N120C3H1 by Littelfuse is an N-CHANNEL IGBT with VCEsat of 4.2V, IC of 95A, and Ptot of 460W. Ideal for power control applications, it operates at -55 to 150°C with a VCEmax of 1200V.

Median Price

$43.737

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Nova Conductors

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Andel Nordic

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AZTECH Wire

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Overview

Unlock the power of efficient and reliable power control with the IXGN50N120C3H1 by Littelfuse. As a trusted manufacturer in the industry, Littelfuse delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like no other. This N-CHANNEL transistor with a built-in diode is designed for maximum performance and durability in a variety of applications. Offering a high collector-emitter voltage of 1200V and a maximum collector current of 95A, this transistor ensures seamless power management with minimal turn off time. Trust Littelfuse to provide you with the tools you need to elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external factors, making the product suitable for industrial applications.

Polarity or Channel Type: N-CHANNEL

Allows for efficient current flow in the N-channel configuration, enhancing overall performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with a built-in diode, expanding the range of applications where this IGBT can be used.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring reliable and precise control over power usage.

Maximum VCEsat: 4.2 V

Low VCEsat minimizes power dissipation and improves efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into existing circuit designs.

Nominal Turn Off Time (toff): 485 ns

Fast turn-off time enhances switching speed and reduces power loss during operation.

No. of Terminals: 4

4 terminals provide a secure connection and ensure stable operation within the circuit.

Maximum Power Dissipation (Abs): 460 W

High power dissipation capacity allows for reliable operation in high-power applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design facilitates easy installation and improves thermal performance.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures stability and reliability under varying environmental conditions.

Maximum Collector-Emitter Voltage: 1200 V

High VCE voltage rating allows for use in high-voltage applications without risk of damage.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the IGBT suitable for demanding applications.

Maximum Gate-Emitter Voltage: 20 V

Allows for precise control over gate voltage, ensuring proper operation and efficiency.

Minimum Operating Temperature: -55 °C

Wide temperature range enables operation in harsh environments without compromising performance.

Maximum Collector Current (IC): 95 A

High maximum collector current rating allows for use in high-power applications with large current requirements.

Maximum Gate-Emitter Threshold Voltage: 5 V

Low gate-emitter threshold voltage ensures fast and efficient switching performance.

Terminal Position: UPPER

Upper terminal position simplifies connection and ensures proper alignment within the circuit layout.

Case Connection: ISOLATED

Isolated case connection enhances safety and provides protection against electrical hazards.

Nominal Turn On Time (ton): 60 ns

Fast turn-on time improves overall switching speed, reducing power loss and enhancing efficiency.

Reference Standard: UL RECOGNIZED

UL recognition ensures compliance with safety and quality standards, making the product a reliable choice for industrial applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGN50N120C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

485 ns

Nominal Turn On Time (ton):

60 ns

Maximum VCEsat:

4.2 V

Trade Compliance

IXGN50N120C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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