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IXGN200N60B3

IXYS Corporation

IXGN200N60B3 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 830 W; Maximum Collector Current (IC): 300 A; Terminal Form: UNSPECIFIED;

Median Price

$44.444

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

< 1k

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Farnell

UK . 25 parts In-Stock

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$26.150

100+ parts

$19.110

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25

$26.150

$19.110

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Chip1Stop

Japan . 240 parts In-Stock

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$50.810

100+ parts

$40.230

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240

$50.810

$40.230

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Verical

USA . 240 parts In-Stock

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$48.679

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240

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$48.679

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Arrow

USA . 220 parts In-Stock

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$40.210

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220

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$40.210

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TME

Poland . 17 parts In-Stock

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$46.030

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$46.030

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Lonics

Poland . 36 parts In-Stock

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Distributors (Availability)

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Continental Prestige Electronics

USA . 8 parts In-Stock

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$36.490

100+ parts

$29.560

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8

$36.490

$29.560

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Microchip USA

USA . 4,598 parts In-Stock

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$101.936

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4,598

$101.936

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Argo Parts USA

USA . 4,163 parts In-Stock

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4,163

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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1,000

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Perfect Parts

USA . 102 parts In-Stock

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102

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Aranea Global

USA . 100 parts In-Stock

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100

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGN200N60B3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

300 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

750 ns

Nominal Turn Off Time (toff):

493 ns

Nominal Turn On Time (ton):

127 ns

Maximum VCEsat:

1.5 V

Trade Compliance

IXGN200N60B3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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