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FZ1200R45HL3BPSA1

Infineon Technologies

FZ1200R45HL3BPSA1 by Infineon Technologies

FZ1200R45HL3BPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4500V max collector-emitter voltage. It has a complex configuration, 6670ns turn-off time, and 1100ns turn-on time. Ideal for power control applications, this device features a plastic/epoxy package body and operates from -40°C.

Median Price

$4,993.790

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 82 parts In-Stock

1+ parts

$4,125.130

100+ parts

$3,877.620

1k+ parts

$3,630.110

10k+ parts

-

82

$4,125.130

$3,877.620

$3,630.110

-

DigiKey

USA . 22 parts In-Stock

1+ parts

$4,993.790

100+ parts

$4,993.790

1k+ parts

$4,993.790

10k+ parts

$4,993.790

22

$4,993.790

$4,993.790

$4,993.790

$4,993.790

Verical

USA . 47 parts In-Stock

1+ parts

$5,156.413

100+ parts

$4,847.025

1k+ parts

$4,537.637

10k+ parts

-

47

$5,156.413

$4,847.025

$4,537.637

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$2,407.580

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$2,407.580

-

-

-

Digiode

USA . 956 parts In-Stock

1+ parts

$4,561.634

100+ parts

-

1k+ parts

-

10k+ parts

-

956

$4,561.634

-

-

-

Vyrian

USA . 3,992 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,992

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 644 parts In-Stock

1+ parts

$0.561

100+ parts

-

1k+ parts

-

10k+ parts

-

644

$0.561

-

-

-

Modulus Dynamics

Lithuania . 5,737 parts In-Stock

1+ parts

$1.452

100+ parts

$1.394

1k+ parts

$1.336

10k+ parts

-

5,737

$1.452

$1.394

$1.336

-

Aztec Data Supply Inc.

USA . 4,998 parts In-Stock

1+ parts

$1.840

100+ parts

-

1k+ parts

-

10k+ parts

-

4,998

$1.840

-

-

-

AZTECH Wire

Italy . 398 parts In-Stock

1+ parts

$16.083

100+ parts

-

1k+ parts

-

10k+ parts

-

398

$16.083

-

-

-

Microchip USA

USA . 230 parts In-Stock

1+ parts

$2,299.380

100+ parts

-

1k+ parts

-

10k+ parts

-

230

$2,299.380

-

-

-

Aranea Global

USA . 100 parts In-Stock

1+ parts

$2,359.428

100+ parts

-

1k+ parts

$2,265.051

10k+ parts

-

100

$2,359.428

-

$2,265.051

-

Continental Prestige Electronics

USA . 5,883 parts In-Stock

1+ parts

$2,407.580

100+ parts

-

1k+ parts

-

10k+ parts

$2,359.428

5,883

$2,407.580

-

-

$2,359.428

Argo Parts USA

USA . 2,051 parts In-Stock

1+ parts

$2,407.580

100+ parts

$2,383.504

1k+ parts

$2,359.428

10k+ parts

$2,335.352

2,051

$2,407.580

$2,383.504

$2,359.428

$2,335.352

Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$2,455.731

100+ parts

$2,455.731

1k+ parts

$2,455.731

10k+ parts

-

700

$2,455.731

$2,455.731

$2,455.731

-

Ampacity Inc.

Singapore . 42 parts In-Stock

1+ parts

$4,081.460

100+ parts

-

1k+ parts

-

10k+ parts

-

42

$4,081.460

-

-

-

Semicontronic

India . 42 parts In-Stock

1+ parts

$4,081.460

100+ parts

$3,979.424

1k+ parts

$3,959.016

10k+ parts

-

42

$4,081.460

$3,979.424

$3,959.016

-

Corphita

USA . 277 parts In-Stock

1+ parts

$4,321.548

100+ parts

-

1k+ parts

-

10k+ parts

-

277

$4,321.548

-

-

-

Overview

Unlock the power of efficient and reliable power control with the FZ1200R45HL3BPSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers high-quality Insulated Gate Bipolar Transistors (IGBT) that offer superior performance and durability. Ideal for a wide range of applications, this N-CHANNEL transistor boasts a complex configuration and three elements for maximum efficiency. With a maximum Collector-Emitter Voltage of 4500V and a Nominal Turn On Time of 1100ns, this product provides exceptional value to customers seeking top-notch power control solutions. Experience the benefits of Infineon's cutting-edge technology and elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the components inside the package, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient power control and low on-state resistance, making it suitable for high-power applications.

Configuration: COMPLEX

The complex configuration allows for advanced functionality and versatility in power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in controlling high power loads.

Package Shape: RECTANGULAR

The rectangular shape enables easy mounting and integration into existing systems or circuit designs.

No. of Elements: 3

Having multiple elements allows for higher current and voltage handling capabilities, making it suitable for heavy-duty applications.

Nominal Turn Off Time (toff): 6670 ns

The quick turn off time ensures efficient switching and helps in reducing power losses in the system.

No. of Terminals: 9

Having more terminals provides flexibility in circuit connections and enables advanced control and monitoring of the device.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure and stable mounting, ensuring mechanical stability in high-power applications.

Maximum Collector-Emitter Voltage: 4500 V

With a high maximum voltage rating, this IGBT can handle high voltage levels, making it suitable for high-power applications.

Transistor Element Material: SILICON

Silicon is a commonly used semiconductor material known for its high efficiency and reliability, ensuring consistent performance.

Minimum Operating Temperature: -40 °C

The wide operating temperature range allows for operation in harsh environments, making it suitable for a variety of applications.

Terminal Position: UPPER

The upper terminal position facilitates easy connections and integration into circuit designs, ensuring ease of use.

Case Connection: ISOLATED

The isolated case connection provides electrical insulation and safety, protecting the device and surrounding components from voltage spikes.

Nominal Turn On Time (ton): 1100 ns

The quick turn on time ensures fast response and efficient switching, contributing to overall system performance.

Reference Standard: IEC-1287

Compliance with the IEC-1287 standard ensures quality, reliability, and compatibility with industry standards.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FZ1200R45HL3BPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector-Emitter Voltage:

4500 V

Configuration:

JESD-30 Code:

R-PUFM-X9

No. of Elements:

3

No. of Terminals:

9

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

IEC-1287

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

6670 ns

Nominal Turn On Time (ton):

1100 ns

Trade Compliance

FZ1200R45HL3BPSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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