Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
FZ1200R17HE4PHPSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 2 elements, and 7 terminals. Ideal for power control applications, it offers a turn-off time of 1760ns and turn-on time of 955ns. The package style is flange mount with plastic/epoxy body material.
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Authorized Procurement Solutions
Corphita
This material provides good insulation and protection for the components inside the package, making the product durable and reliable.
N-channel IGBTs typically have lower on-state voltage drop and faster switching speeds compared to P-channel IGBTs, making them suitable for high power applications.
Designed specifically for power control applications, this product is optimized for efficient performance and reliability in managing power output.
With a high maximum voltage rating, this IGBT can handle high power applications and voltages, making it suitable for industrial and power electronics.
The long turn-off time allows for better control and management of power in switching applications, ensuring efficient performance and reduced power loss.
The fast turn-on time ensures quick response and activation, making this IGBT suitable for high-speed switching applications where rapid power control is required.
Insulated Gate Bipolar Transistors (IGBT) FZ1200R17HE4PHPSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies
Case Connection:
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FZ1200R17HE4PHPSA1 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.
CEO
Jochen Hanebeck
Chief Financial Officer
Sven Schneider
Chief Marketing Officer
Andreas Urschitz
Villach 300mm
Fabrication
Fab Initiation
2011
Austria
Villach
Wafer Capacity
11,000
Kulim 2
2016
Malaysia
Kulim
79,500
Dresden - Module 3
1999
Germany
Dresden
58,000
Villach Building
2,000
Regensburg
1986
60,000
Dresden 200 - Module 1
1995
28,000
Dresden 200 - Module 2
1996
Building 38
2005
500
Building 47
Kulim 1
2006
110,000
Mesa Facility
1990
USA
Mesa
3,000
Villach 150mm
1981
35,000
Villach 200mm
68,000
Temecula
30,000
2021
2018
5,000
Kulim 3
2024
Fab 25
Austin
31,000
Dresden - Module 4
2026
SMBJ18CA
Silicon Standard
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
IRLML6402TRPBF
International Rectifier
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Package Style (Meter): SMALL OUTLINE;
ULN2803A
Onsemi
NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
LM317T
STMicroelectronics
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Package Code: TO-220; Terminal Form: THROUGH-HOLE; JESD-30 Code: R-XSFM-T3; Minimum Input-Output Voltage Differential: 3 V;
BAV99LT1G
BAV99LT1G by Onsemi is a series connected diode with 2 elements in a small outline package. It has a max reverse recovery time of 0.006 us and can handle up to 100V repetitive peak reverse voltage. Ideal for rectification applications, this diode operates b/w -65°C to 150°C temperature range.
LL4148
Micronas Semiconductor Holding Ag
RECTIFIER DIODE; Surface Mount: YES; No. of Phases: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Output Current: .2 A; Maximum Forward Voltage (VF): 1.2 V;
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
LM107H
Advanced Micro Devices
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Maximum Bias Current (IIB) @25C: .075 uA;
BAV99
Plessey Semiconductors Discrete Components Div
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
Itt Cannon
CONNECTOR ACCESSORY; Alternate Contacts: 030-2042-000; DIN Conformity: NO; Contact Gender: MALE; Terminal Type: WIRE; MIL-Connector Accessory Name: CONTACT;
LM555CN
Fairchild Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR; Surface Mount: NO;
M24308/2-1F
Bel Fuse
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Dielectric Withstanding Voltage (V): 1750VAC; No. of Connectors: ONE; Mixed Contacts: NO;
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
Rfe International
LM555CMX
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
2N2222A
Digitron Semiconductors
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
Hitano Enterprise
EU2B-YS3103F
Idec
ROTARY SWITCH;
IXGR16N170AH1
IXYS Corporation
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Collector Current (IC): 16 A; No. of Elements: 1;
IRG4PH20KPBF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Maximum Collector Current (IC): 11 A; Terminal Form: THROUGH-HOLE;
IKZ75N65ES5XKSA1
Infineon Technologies
IKZ75N65ES5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V VCE, 80A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. The PLASTIC/EPOXY package and THROUGH-HOLE terminals make it suitable for various industrial uses.
STGF20NB60S
STGF20NB60S by STMicroelectronics is an N-CHANNEL IGBT transistor with 600V max collector-emitter voltage, 24A max collector current, and 40W max power dissipation. Ideal for motor control applications due to its single configuration and fast turn-on time of 162ns.
NGTB40N120FL2WG
NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
VS-GT55LA120UX
Vishay Intertechnology
VS-GT55LA120UX by Vishay Intertechnology is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 68A max collector current. Ideal for power control applications, it features a built-in diode, 260ns turn off time, and 291W max power dissipation.
FS200R12KT4RPBPSA1
Infineon's FS200R12KT4RPBPSA1 is a N-CHANNEL IGBT with 6 elements in bridge configuration. It has a max voltage of 1200V, current of 280A, and turn-off time of 600ns. Ideal for power control applications due to its UL recognized standard and silicon material composition.
CM200DY-12NF
Powerex
N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 650 W; Maximum Collector Current (IC): 200 A; Qualification: Not Qualified;
FS150R12KT4P_B11
Infineon FS150R12KT4P_B11 IGBT, N-Channel type, with VCEsat of 2.1V and Pmax of 750W. Ideal for high-power applications requiring fast switching such as motor drives and renewable energy systems due to its low turn-off time of 605ns. Operating temperature range from -40°C to 150°C ensures reliability in various environments.
IXGH10N170
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Maximum Collector Current (IC): 20 A; JEDEC-95 Code: TO-247AD;
IRG4RC10SDPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 38 W; Maximum Collector Current (IC): 14 A; Case Connection: COLLECTOR;
IGW50N60TFKSA1
IGW50N60TFKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals in a rectangular shape.
IXGH24N170
Littelfuse
IXGH24N170 by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 50A max collector current, and 250W max power dissipation. Ideal for power control applications, it has a single configuration and operates at up to 150°C.
STGP15M120F3
STGP15M120F3 by STMicroelectronics is an N-CHANNEL IGBT with a max VCEsat of 2.3V and a max collector-emitter voltage of 1200V. It is used for power control applications, offering a nominal turn off time of 406ns and a max collector current of 30A.
FS25R12YT3BOMA1
Infineon Technologies' FS25R12YT3BOMA1 is an N-CHANNEL IGBT with 1200V max. collector-emitter voltage and 40A max. collector current. Featuring a complex configuration, it has 6 elements and a nominal turn-off time of 640ns. Ideal for applications requiring high power switching such as industrial motor drives and renewable energy systems.
APT50GP60J
Microchip Technology
APT50GP60J by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 202ns and a turn-on time of 55ns, making it ideal for power control applications. The transistor comes in a rectangular package style with flange mount and operates at temperatures up to 150°C.
FGP10N60UNDF
FGP10N60UNDF by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 20A max collector current, and 139W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast switching times of 15.4ns turn on and 24.8ns fall time.
IRG7PH42UD2-EP
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 60 A; No. of Terminals: 3; Case Connection: COLLECTOR;
STGP35HF60W
STMicroelectronics' STGP35HF60W is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 200W power dissipation. It operates up to 150°C and has a gate-emitter threshold voltage of 5.75V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
IRGP4650D-EPBF
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 268 W; Maximum Collector Current (IC): 76 A; Maximum Rise Time (tr): 42 ns; Maximum Fall Time (tf): 54 ns;
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FZ1200R45HL3BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Transistor Element Material: SILICON; No. of Terminals: 9; Package Body Material: PLASTIC/EPOXY;
FZ1200R45KL3B5NOSA1
FZ1200R45KL3B5NOSA1 by Infineon is an N-CHANNEL IGBT with 4500V VCE, 7350ns toff, and 1050ns ton. Ideal for power control applications due to its complex configuration and three elements. Package style is flange mount with nine terminals in a rectangular shape.
FZ1200R17HP4B2BOSA2
FZ1200R17HP4B2BOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1700V max collector-emitter voltage. It has a complex configuration, 1810ns turn-off time, and 850ns turn-on time. Ideal for power control applications, this transistor features a plastic/epoxy package body material and flange mount style for isolated case connection.
FZ1200R12HE4HOSA2
FZ1200R12HE4HOSA2 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 1825A max collector current. It has a complex configuration for power control applications, featuring a nominal turn-off time of 1130ns and turn-on time of 660ns. The package style is flange mount with 7 terminals in a rectangular shape.
FZ1200R12HE4PHPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1825 A; Maximum Gate-Emitter Voltage: 20 V; Transistor Element Material: SILICON;
FZ1200R12HP4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 4930 A; Maximum Collector-Emitter Voltage: 1200 V; Terminal Form: UNSPECIFIED;
FZ1200R16KF4_S1
N-Channel; Maximum Power Dissipation (Abs): 7800 W; Maximum Collector Current (IC): 1200 A; Maximum Collector-Emitter Voltage: 1600 V; Nominal Turn On Time (ton): 1000 ns; Minimum Operating Temperature: -40 Cel;
FZ1200R17HE4HOSA2
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 7800 W; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON;
FZ1200R17HP4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 7800 W; Maximum Collector Current (IC): 1200 A; Terminal Position: UPPER;
FZ1200R33HE3BPSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; No. of Elements: 3; No. of Terminals: 3; Terminal Form: UNSPECIFIED;
FZ1200R33KF2CNOSA1
N-CHANNEL; Configuration: PARALLEL, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 14500 W; Maximum Collector Current (IC): 2000 A; Case Connection: ISOLATED;
FZ1200R16KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Maximum Operating Temperature: 150 Cel; Package Body Material: UNSPECIFIED;
FZ1200R16KF4NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Nominal Turn Off Time (toff): 1600 ns; Terminal Form: UNSPECIFIED;
FZ1200R12HE4P
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1825 A; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
FZ1200R12HP4NPSA1
N-CHANNEL; Configuration: PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 1790 A; No. of Elements: 2; Nominal Turn On Time (ton): 660 ns;
FZ1200R17HE4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 7800 W; Reference Standard: UL APPROVED; Terminal Position: UPPER;
FZ1200R12KE3
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 5600 W; Maximum Collector Current (IC): 1700 A; Maximum Collector-Emitter Voltage: 1200 V;
FZ1200R12KE3NOSA1
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1700 A; No. of Elements: 2; Package Body Material: UNSPECIFIED;
FZ1200R12KF4
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 1200 A; Case Connection: ISOLATED; Package Shape: RECTANGULAR;
FZ1200R17KF6CB2
Eupec & Kg
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 9600 W; Maximum Collector Current (IC): 1950 A; Nominal Turn On Time (ton): 460 ns;
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