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SGS10N60RUFDTU

Onsemi

SGS10N60RUFDTU by Onsemi

SGS10N60RUFDTU by Onsemi is an N-CHANNEL IGBT with 600V VCE, 16A IC, and 35W Pd. Ideal for MOTOR CONTROL applications due to its fast tf of 220ns and toff of 284ns. The package style is FLANGE MOUNT with a max operating temp of 150°C.

Median Price

$0.942

Lifecycle Status

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7

In-Stock Inventory

1k+

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Arrow

USA . 28 parts In-Stock

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$0.942

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$0.942

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$0.942

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$0.942

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Verical

USA . 28 parts In-Stock

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$0.942

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$0.942

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$0.942

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Digiode

USA . 884 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$0.898

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Vyrian

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Chip Stock

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ComSIT Distribution GmbH

Germany . 159 parts In-Stock

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Ampacity Inc.

Singapore . 28 parts In-Stock

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$0.800

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Corphita

USA . 1,198 parts In-Stock

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$0.848

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Corohmni

South Africa . 63 parts In-Stock

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$0.863

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Continental Prestige Electronics

USA . 4,781 parts In-Stock

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$0.880

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Argo Parts USA

USA . 2,985 parts In-Stock

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AZTECH Wire

Italy . 605 parts In-Stock

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Metaverse IC Inc.

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Problanco Electronics

Mexico . 6,890 parts In-Stock

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Kulean Microsystems

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TANS Electronics

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SupplyDigital Components

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Perfect Parts

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UHIMA Technologies

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Microchip USA

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Netroflash

USA . 50 parts In-Stock

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$0.880

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Overview

Boost your motor control applications with the SGS10N60RUFDTU Insulated Gate Bipolar Transistor from Onsemi. With a maximum collector-emitter voltage of 600V and a high power dissipation of 35W, this N-Channel transistor offers reliable performance and durability. Its built-in diode and fast switching times make it ideal for efficient motor control. Trust Onsemi's reputation for quality and innovation to deliver the value and benefits you need for your projects. Upgrade your designs with the SGS10N60RUFDTU today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the internal components in various environments.

Polarity or Channel Type:

N-CHANNEL - Offers efficient current flow and low on-state voltage drop for improved performance.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and allows for greater control and power efficiency.

Transistor Application:

MOTOR CONTROL - Ideal for controlling and managing power output in motor applications with precision.

Package Shape:

RECTANGULAR - Easy to mount and integrate into different systems for versatile usage.

Terminal Form:

THROUGH-HOLE - Ensures secure and stable connections for reliable performance.

Maximum Fall Time (tf):

220 ns - Fast fall time allows for quick switching and response times in applications.

Nominal Turn Off Time (toff):

284 ns - Provides efficient turn off operations for optimal power management.

No. of Terminals:

3 - Simplifies connection setup and reduces the risk of errors during installation.

Maximum Power Dissipation (Abs):

35 W - Handles high power loads effectively without overheating or damage.

Package Style (Meter):

FLANGE MOUNT - Allows for easy mounting and secure placement in various setups.

Maximum Operating Temperature:

150 °C - Can operate in high-temperature environments without compromising performance.

Maximum Collector-Emitter Voltage:

600 V - Handles high voltage applications with ease for reliable performance.

Transistor Element Material:

SILICON - Provides excellent semiconductor properties for efficient power handling.

Maximum Gate-Emitter Voltage:

20 V - Ensures safe and reliable gate control without damaging the internal components.

Maximum Collector Current (IC):

16 A - Supports high current loads for robust and effective power management.

Maximum Gate-Emitter Threshold Voltage:

8 V - Allows for precise control of the gate voltage for accurate switching.

Terminal Finish:

MATTE TIN - Ensures reliable and stable terminal connections for consistent performance.

Terminal Position:

SINGLE - Simplifies installation and reduces the risk of wiring errors for ease of use.

Case Connection:

ISOLATED - Provides electrical isolation for enhanced safety and protection in circuits.

Nominal Turn On Time (ton):

49 ns - Fast turn on time enables quick response and efficient power delivery.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SGS10N60RUFDTU attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

LOW CONDUCTION LOSS, HIGH SPEED SWITCHING

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Fall Time (tf):

220 ns

Maximum Gate-Emitter Threshold Voltage:

8 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

284 ns

Nominal Turn On Time (ton):

49 ns

Trade Compliance

SGS10N60RUFDTU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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