Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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TIG066SS-TL-E
Onsemi
TIG066SS-TL-E by Onsemi is an N-CHANNEL IGBT with 400V max collector-emitter voltage, 6V max gate-emitter voltage, and 150 °C max operating temperature. It is surface mountable and has a tin/bismuth terminal finish. Ideal for power electronics applications requiring high-voltage switching capabilities.
400 V
1 V
6 V
e6
1
150 Cel
N-CHANNEL
Insulated Gate BIP Transistors
YES
Tin/Bismuth (Sn/Bi)
TIG052TS-TL-E
TIG052TS-TL-E by Onsemi is an N-CHANNEL IGBT suitable for surface mount applications. With a max operating temp of 150 °C, it offers a Vce of 400V and Vge of 6V. Ideal for power electronics in various industries due to its high voltage capabilities and compact design.
NGTB15N135IHRWG
NGTB15N135IHRWG by Onsemi is an N-CHANNEL IGBT with 357W power dissipation, 175 °C max temp, and 1350V collector-emitter voltage. Ideal for high-power applications like industrial motor drives and renewable energy systems due to its 30A collector current capability and 20V gate-emitter voltage.
30 A
1350 V
6.5 V
20 V
e3
175 Cel
357 W
NO
Matte Tin (Sn) - annealed
NGTB15N120IHLWG
NGTB15N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max gate-emitter voltage of 20V. It has a nominal turn off time of 440ns, making it suitable for power control applications requiring high voltage handling and fast switching capabilities. The transistor's package style is flange mount with through-hole terminals, ideal for applications where efficient heat dissipation is crucial.
COLLECTOR
1200 V
SINGLE WITH BUILT-IN DIODE
TO-247
R-PSFM-T3
3
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
156 W
TIN
THROUGH-HOLE
SINGLE
POWER CONTROL
SILICON
440 ns
NGTB15N60S1EG
NGTB15N60S1EG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 30A IC, and 117W Ptot. Ideal for MOTOR CONTROL applications due to its built-in diode, 440ns toff, and 93ns ton. Package: PLASTIC/EPOXY, Through-Hole terminals, Flange Mount style.
650 V
TO-220AB
117 W
MATTE TIN
MOTOR CONTROL
93 ns
NGTB20N120IHLWG
NGTB20N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 40A max collector current, and 485ns nominal turn off time. Ideal for power control applications, it features a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
40 A
192 W
485 ns
NGTB20N120LWG
NGTB20N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 40A. It has a nominal turn-off time of 485ns and is ideal for motor control applications due to its single configuration with built-in diode. The transistor operates at a max temperature of 150 °C, making it suitable for high-power applications.
110 ns
NGTB25N120IHLWG
NGTB25N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 475ns toff. Ideal for power control applications due to its 192W Pdiss, FLANGE MOUNT package style, and built-in diode configuration.
50 A
475 ns
NGTB25N120LWG
NGTB25N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 192W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 475ns.
117 ns
NGTG15N60S1EG
NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.
NGTB15N60EG
NGTB15N60EG by Onsemi is an N-CHANNEL IGBT with 117W power dissipation, 600V collector-emitter voltage, and 30A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications in various industries like automotive and industrial equipment.
600 V
NGTB15N120FLWG
NGTB15N120FLWG by Onsemi is an N-CHANNEL IGBT with 156W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities at up to 150°C operating temperature.
NGTB20N120IHSWG
NGTB20N120IHSWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 156W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
NGTB25N120FLWG
NGTB25N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 192W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
NGTB30N120IHLWG
NGTB30N120IHLWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 260W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
60 A
260 W
NGTB30N120LWG
NGTB30N120LWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 60A max collector current, and 560W max power dissipation. Ideal for motor control applications due to its single configuration with built-in diode and fast turn-off time of 596ns.
560 W
596 ns
167 ns
NGTB40N120FLWG
NGTB40N120FLWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 80A max collector current, and 260W max power dissipation. Ideal for power control applications, it features a built-in diode, 630ns turn-off time, and operates up to 150°C.
80 A
630 ns
172 ns
NGTB40N120IHLWG
NGTB40N120IHLWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It has a nominal turn off time of 565ns, making it ideal for power control applications. The transistor comes in a rectangular package style with through-hole terminals and can handle up to 260W of power dissipation.
565 ns
NGTB40N120LWG
NGTB40N120LWG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 80A. It is designed for motor control applications, featuring a nominal turn-off time of 565ns and a max power dissipation of 260W. The transistor has a single configuration with built-in diode in a rectangular package style suitable for flange mount installations.
178 ns
NGTB40N60IHLWG
NGTB40N60IHLWG by Onsemi is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. Featuring a turn-off time of 230ns and turn-on time of 110ns, it comes in a rectangular package style with through-hole terminals.
230 ns
NGTB50N60FLWG
NGTB50N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 223W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
100 A
223 W
Tin (Sn)
NGTG30N60FLWG
NGTG30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
250 W
NGTB30N60FLWG
NGTB30N60FLWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 250W power dissipation. Ideal for high-power applications requiring efficient switching capabilities at up to 150 °C operating temperature.
NGTB50N60FWG
NGTB50N60FWG by Onsemi is an N-CHANNEL IGBT with 223W power dissipation, 600V collector-emitter voltage, and 100A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications like motor drives and inverters due to its robust specifications.
NGTG30N60FWG
NGTG30N60FWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 167W Pd. Ideal for high-power applications requiring efficient switching at up to 150°C operating temperature.
167 W
NGTB20N120IHRWG
NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
384 W
TIG056BF-1E
Onsemi's TIG056BF-1E is an N-CHANNEL IGBT with 30W power dissipation, 150 °C max temp, and 430V collector-emitter voltage. Ideal for high-power applications in industrial machinery and renewable energy systems due to its robust design and efficient performance.
430 V
5 V
33 V
30 W
NGTB30N120IHRWG
NGTB30N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 60A IC, and 384W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
NGTB40N120IHRWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 384 W; Maximum Collector Current (IC): 80 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Gate-Emitter Voltage: 20 V;
NGTB40N60FLWG
NGTB40N60FLWG by Onsemi is an N-CHANNEL IGBT with 257W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 150 °C and has a gate-emitter threshold voltage of 6.5V. Ideal for high-power applications requiring efficient switching capabilities.
257 W
NGTB40N120FL2WG
NGTB40N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 80A IC, and 535W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
535 W
NGTB50N120FL2WG
NGTB50N120FL2WG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 100A IC, and 535W Pd. Ideal for high-power applications like motor drives, inverters, and power supplies due to its robust design and high operating temperature of 175°C.
NGTB50N60FL2WG
NGTB50N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 100A IC, and 417W Pd. It operates up to 175 °C making it ideal for high-power applications like motor drives and inverters.
417 W
NGTB30N60L2WG
NGTB30N60L2WG by Onsemi is an N-CHANNEL IGBT with 225W power dissipation, 600V collector-emitter voltage, and 100A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control equipment.
225 W
NGTB45N60SWG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;
90 A
MGB15N40CLT4
MGB15N40CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 22V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a surface-mount package with GULL WING terminals. The transistor has a nominal turn-off time of 20500ns and can handle a max collector current of 15A.
VOLTAGE CLAMPING
15 A
440 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
2.1 V
22 V
R-PSSO-G2
e0
2
SMALL OUTLINE
235
136 W
Not Qualified
Tin/Lead (Sn/Pb)
GULL WING
30
AUTOMOTIVE IGNITION
20500 ns
6000 ns
NGTB50N65FL2WG
NGTB50N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCE, 100A IC, and 417W Pd. Ideal for high-power applications requiring efficient switching at up to 175°C operating temperature.
NGTB15N120FL2WG
NGTB15N120FL2WG by Onsemi is an N-CHANNEL IGBT with 294W power dissipation, 1200V collector-emitter voltage, and 30A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial machinery, renewable energy systems, and motor control units.
294 W
NGB8206N
NGB8206N by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 390V, max gate-emitter voltage of 15V, and max collector current of 20A. With a package style of SMALL OUTLINE and peak reflow temperature of 235 °C, it offers reliable performance in high-power automotive systems.
20 A
390 V
14000 ns
15 V
150 W
8000 ns
TIN LEAD
18500 ns
6500 ns
NGB8206NTF4
NGB8206NTF4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 390V and a Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. The transistor has a Nominal Turn Off Time of 18500ns and Nominal Turn On Time of 6500ns, suitable for fast switching requirements in automotive systems.
Tin/Lead (Sn80Pb20)
NGTB30N65IHL2WG
N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 60 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; JESD-609 Code: e3;
300 W
NGTB35N60FL2WG
NGTB35N60FL2WG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 70A IC, and 300W Pd. It operates up to 175°C making it ideal for high-power applications like motor drives and inverters. With surface mount capability and a gate-emitter threshold voltage of 6.5V, it offers efficient power management in various industrial settings.
70 A
NGTB35N65FL2WG
The Onsemi NGTB35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 300W power dissipation. Ideal for high-power applications requiring efficient switching at up to 175 °C operating temperature.
NGTB60N60SWG
NGTB60N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 298W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.
120 A
298 W
NGTB30N60SWG
NGTB30N60SWG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 60A IC, and 189W Pd. It has a toff of 285ns and ton of 90ns, suitable for power control applications requiring fast switching speeds. The transistor comes in a PLASTIC/EPOXY package with through-hole terminals and can operate up to 150 °C.
189 W
285 ns
90 ns
NGB15N41CLT4
NGB15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.
15000 ns
107 W
7000 ns
15500 ns
5700 ns
NGD15N41CLT4
NGD15N41CLT4 by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max gate-emitter voltage of 15V. It is designed for automotive ignition applications, featuring a built-in diode and resistor in a small outline package style. With a max power dissipation of 107W, it operates at temperatures up to 175 °C.
NGP15N41CL
NGP15N41CL by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Power Dissipation of 107W. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. With a rise time of 7000ns and fall time of 15000ns, this transistor offers reliable performance in automotive systems.
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