Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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NGTB40N60FL2WG
Onsemi
NGTB40N60FL2WG by Onsemi is an N-CHANNEL IGBT with 366W power dissipation, 600V collector-emitter voltage, and 80A collector current. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and electric vehicles.
80 A
600 V
6.5 V
20 V
e3
175 Cel
N-CHANNEL
366 W
Insulated Gate BIP Transistors
NO
Tin (Sn)
NGB18N40CLBT4
NGB18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
COLLECTOR
18 A
430 V
SINGLE WITH BUILT-IN DIODE AND RESISTOR
15000 ns
1.9 V
18 V
R-PSSO-G2
e0
1
2
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
235
115 W
Not Qualified
7000 ns
YES
TIN LEAD
GULL WING
SINGLE
AUTOMOTIVE IGNITION
SILICON
13000 ns
5200 ns
NGD18N40CLBT4
NGD18N40CLBT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 15A, and power dissipation of 115W. The transistor operates at a max temperature of 175 °C with rise time of 7000ns and fall time of 15000ns.
15 A
NGD8201NT4
NGD8201NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 115W. This surface-mount transistor operates at up to 175 °C with rise time of 14000ns and fall time of 7000ns.
20 A
440 V
2.3 V
15 V
14000 ns
18500 ns
6500 ns
NGB8202NT4
NGB8202NT4 by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 440V, collector current of 20A, and power dissipation of 150W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 8000ns and fall time of 14000ns.
2.1 V
150 W
8000 ns
NGD8205NT4
NGD8205NT4 by Onsemi is an N-CHANNEL IGBT with 20A IC, 390V VCE, and 88W Pd. Ideal for automotive ignition applications due to its built-in diode and resistor. Features GULL WING terminals, RECTANGULAR package shape, and operates up to 175 °C.
390 V
88 W
MGP15N40CLG
MGP15N40CLG by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 440V and a max collector current of 15A. It features a built-in diode and resistor, making it ideal for automotive ignition applications. With a package style of FLANGE MOUNT and max power dissipation of 150W, this transistor operates at temperatures up to 175 °C.
VOLTAGE CLAMPING
20000 ns
22 V
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
260
6000 ns
TIN
THROUGH-HOLE
20500 ns
NGB18N40CLBT4G
NGB18N40CLBT4G by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 430V and a max gate-emitter voltage of 18V. It has a built-in diode and resistor, making it suitable for automotive ignition applications. This IGBT has a max power dissipation of 115W and operates at temperatures up to 175 °C.
NGB8202NT4G
NGB8202NT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 440V and Max Collector Current of 20A. It features a built-in diode and resistor, making it ideal for POWER CONTROL applications. With a small outline package style and surface mount capability, it offers efficient performance up to 175°C operating temperature.
POWER CONTROL
NGD8201NT4G
NGD8201NT4G by Onsemi is an N-CHANNEL IGBT with 20A IC, 400V VCE, and 125W power dissipation. Ideal for power control applications, it features a built-in diode and resistor in a small outline package suitable for surface mount technology.
400 V
125 W
NGP15N41CLG
NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.
107 W
15500 ns
5700 ns
NGB8204NT4G
NGB8204NT4G by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It has a max collector-emitter voltage of 430V, collector current of 18A, and power dissipation of 115W. This surface-mount transistor operates at temperatures up to 175 °C with rise time of 7000ns and fall time of 15000ns.
FGB3040G2-F085
FGB3040G2-F085 by Onsemi is an N-CHANNEL IGBT with 7000 ns rise time, 15000 ns fall time, and 150 W power dissipation. Ideal for applications requiring a max collector-emitter voltage of 390 V, such as power electronics and motor control systems.
41 A
2.2 V
12 V
Matte Tin (Sn) - annealed
30
FGB3440G2-F085
FGB3440G2-F085 by Onsemi is an N-CHANNEL IGBT with 26.9A IC, 390V VCE, and 166W power dissipation. Ideal for applications requiring high power handling and temperature resistance up to 175°C. Suitable for surface mount assembly with a rise time of 7000ns and fall time of 15000ns.
26.9 A
166 W
FGH60N60SMD-F085
FGH60N60SMD-F085 by Onsemi is an N-CHANNEL IGBT with 600V VCE, 120A IC, and 600W Ptot. Ideal for power control applications due to its fast tr of 60ns and tf of 20ns. Its single configuration with built-in diode makes it suitable for high-power switching needs.
120 A
SINGLE WITH BUILT-IN DIODE
20 ns
6 V
TO-247AB
600 W
AEC-Q101
60 ns
MATTE TIN
139 ns
66 ns
FGH60T65SHD-F155
FGH60T65SHD-F155 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.1V and IC of 120A, ideal for POWER CONTROL applications. It has a toff of 165ns, ton of 85ns, and can operate at temperatures ranging from -55°C to 175°C.
RC-IGBT
650 V
7.5 V
TO-247
-55 Cel
NOT SPECIFIED
349 W
165 ns
85 ns
NXH100B120H3Q0PTG
NXH100B120H3Q0PTG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
ISOLATED
50 A
1200 V
COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
R-XUFM-X22
22
150 Cel
-40 Cel
UNSPECIFIED
186 W
UPPER
291 ns
61 ns
NXH100B120H3Q0SG
NXH100B120H3Q0SG by Onsemi is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a VCEsat of 2.3V, IC of 50A, and Pmax of 186W. Ideal for power control applications due to its fast ton of 61ns and toff of 291ns at temperatures ranging from -40 °C to +150°C.
NXH100B120H3Q0STG
NXH100B120H3Q0STG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.
AFGHL75T65SQDC
AFGHL75T65SQDC by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max collector-emitter voltage of 650V. It is designed for power control applications, featuring a nominal turn-off time of 196.4ns and a max power dissipation of 375W. Ideal for high-power electronic systems requiring efficient switching capabilities.
LOW CONDUCTION LOSS
6.4 V
375 W
196.4 ns
73.6 ns
NXH400N100H4Q2F2PG
N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 959 W; Maximum Collector Current (IC): 409 A; Maximum Gate-Emitter Threshold Voltage: 6.1 V;
409 A
1000 V
COMPLEX
6.1 V
R-XUFM-X42
4
42
959 W
619 ns
186 ns
NXH400N100H4Q2F2SG
NXH400N100H4Q2F2SG by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 959W power dissipation, and 409A collector current. Ideal for POWER CONTROL applications due to its fast turn-off time of 619ns and high operating temperature range (-40 °C to 175°C).
AFGHL25T120RHD
AFGHL25T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 219ns. The package style is FLANGE MOUNT with a RECTANGULAR shape and THROUGH-HOLE terminals.
48 A
7.3 V
261 W
219 ns
43 ns
2.4 V
AFGHL40T120RHD
AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.
400 W
230 ns
AFGHL40T120RLD
AFGHL40T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 529W power dissipation. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range.
529 W
276 ns
80 ns
AFGHL30T65RQDN
AFGHL30T65RQDN by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.82V and a max IC of 42A. It is designed for power control applications, featuring a single configuration with built-in diode. With a max operating temperature of 175 °C, it offers high power dissipation up to 230.8W in a rectangular package style suitable for flange mount installations.
42 A
6.3 V
230.8 W
48 ns
1.82 V
NXH450N65L4Q2F2S1G
NXH450N65L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 2 BANKS, SERIES CONNECTED configuration. It has a Max VCEsat of 2.2V and can handle up to 365W power dissipation. Ideal for POWER CONTROL applications due to its high Collector Current (IC) of 167A and low Turn Off Time (toff) of 694ns.
167 A
2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR
5.2 V
R-XUFM-X36
36
365 W
694 ns
211 ns
AFGHL25T120RLD
AFGHL25T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 400W Pd. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.
7.1 V
205 ns
43.2 ns
2 V
FGHL75T65LQDT
FGHL75T65LQDT by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 1.35V and IC of 80A, ideal for POWER CONTROL applications. It features a package style of FLANGE MOUNT, operating temperature range from -55 to 175°C, and a turn-off time of 696ns.
469 W
696 ns
88 ns
1.35 V
FGH4L50T65SQD
FGH4L50T65SQD by Onsemi is an N-CHANNEL IGBT transistor with a max VCEsat of 2.1V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 169.6ns and ton of 44.8ns, operating at temperatures ranging from -55°C to 175°C.
R-PSFM-T4
268 W
169.6 ns
44.8 ns
NXH300B100H4Q2F2SG-R
NXH300B100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. With a Max VCEsat of 2.25V, it offers a Max Collector-Emitter Voltage of 1000V and Max Power Dissipation of 194W. This COMPLEX transistor has a Nominal Turn Off Time of 326ns, making it suitable for high-power operations in various industrial settings.
73 A
5.9 V
R-XUFM-X59
6
59
194 W
326 ns
110.42 ns
2.25 V
NXH400N100H4Q2F2SG-R
NXH400N100H4Q2F2SG-R by Onsemi is an N-CHANNEL IGBT with 4 elements, VCEsat of 2.3V, and IC of 409A. Ideal for POWER CONTROL applications, it has a toff of 619ns and ton of 186ns. Operating temperature ranges from -40 °C to 175°C.
NXH800A100L4Q2F2S1G
NXH800A100L4Q2F2S1G by Onsemi is an N-CHANNEL IGBT with 1000V VCEsat, 309A IC, and 714W power dissipation. Ideal for POWER CONTROL applications due to its high voltage handling capacity and low saturation voltage. Suitable for complex configurations requiring precise control in industrial settings.
309 A
6.7 V
R-XUFM-P17
17
714 W
PIN/PEG
1121.94 ns
223.8 ns
NXH800A100L4Q2F2S2G
NXH800A100L4Q2F2S2G by Onsemi is an N-CHANNEL IGBT for POWER CONTROL applications. It features a Max VCEsat of 2.3V, Max Collector-Emitter Voltage of 1000V, and Max Collector Current of 309A. This COMPLEX transistor has a Nominal Turn Off Time of 1121.94ns and operates b/w -40 to 175 °C temperature range.
NGTB25N120SWG
NGTB25N120SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V, IC of 50A, and Ptot of 385W. Ideal for power control applications due to its built-in diode and fast turn-off time (toff) of 430ns. Operates in temperatures ranging from -55 °C to 175°C, making it suitable for various industrial uses.
385 W
430 ns
178 ns
NGTB40N120SWG
The Onsemi NGTB40N120SWG is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, turn-off time of 564ns, and power dissipation of 535W. The transistor operates b/w -55 to 175 °C and features a built-in diode in a RECTANGULAR package with THROUGH-HOLE terminals.
535 W
564 ns
154 ns
NGTB45N60S2WG
NGTB45N60S2WG by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.3V and Max IC of 90A. Ideal for POWER CONTROL applications, it has a Max VCE of 600V and can operate in temperatures ranging from -55 to 175 °C.
90 A
TO-247AD
300 W
232 ns
NGTB50N60S1WG
NGTB50N60S1WG by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2V and a max IC of 100A. It is used for power control applications, featuring a built-in diode and operating temperature range from -55 to 175 °C.
100 A
417 W
341 ns
NGTB75N60SWG
NGTB75N60SWG by Onsemi is an N-CHANNEL IGBT with VCEsat of 2V, IC of 100A, and Pdiss of 595W. Ideal for power control applications due to its single configuration with built-in diode. Operates b/w -55 °C to 175°C temperature range in a rectangular package style.
595 W
380 ns
150 ns
NGTB03N60R2DT4G
NGTB03N60R2DT4G by Onsemi is an N-CHANNEL IGBT with a max VCEsat of 2.1V and IC of 9A, ideal for power control applications. It features a built-in diode, small outline package style, and can operate at temperatures up to 175°C. This transistor has a turn-off time of 105ns and is designed for surface mount assembly with gull wing terminals.
9 A
7 V
49 W
105 ns
134 ns
NGTB15N60R2FG
NGTB15N60R2FG by Onsemi is an N-CHANNEL IGBT with 600V VCE, 24A IC, and 54W power dissipation. It operates up to 175 °C making it ideal for high-power applications in industrial machinery, renewable energy systems, and motor control.
24 A
54 W
NGTB15N120IHWG
NGTB15N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 385ns toff. It is used for power control applications due to its single configuration with built-in diode. The transistor's package style is flange mount with a plastic/epoxy body material.
30 A
385 ns
NGTG35N65FL2WG
The Onsemi NGTG35N65FL2WG is an N-CHANNEL IGBT with 650V VCE, 70A IC, and 231ns toff. Ideal for POWER CONTROL applications, it features a PLASTIC/EPOXY package, SINGLE configuration, and RECTANGULAR shape for FLANGE MOUNT installation.
70 A
231 ns
108 ns
NXH80T120L2Q0SG
Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 146 W; Maximum Collector Current (IC): 65 A; Maximum Gate-Emitter Voltage: 20 V; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
65 A
146 W
2.8 V
NXH80T120L2Q0PG
NXH80T120L2Q0PG by Onsemi is an IGBT with VCEsat of 2.8V, Pdiss of 146W, and VCEmax of 1200V. Ideal for high-power applications requiring a max IC of 65A and operating temperatures up to 150 °C.
NGTB20N120IHWG
NGTB20N120IHWG by Onsemi is an N-CHANNEL IGBT with 1200V max collector-emitter voltage and 40A max collector current. It has a built-in diode, 395ns turn off time, and is ideal for power control applications. Package style is flange mount with through-hole terminals.
40 A
395 ns
NGTB30N135IHR1WG
NGTB30N135IHR1WG by Onsemi is an N-CHANNEL IGBT with 1350V VCEsat, 60A IC, and 394W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -40 to 175 °C.
60 A
1350 V
394 W
443 ns
3 V
NGTB60N65FL2WG
NGTB60N65FL2WG by Onsemi is an N-CHANNEL IGBT with 650V VCEsat, 100A IC, and 595W power dissipation. Ideal for power control applications, it features a built-in diode and operates b/w -55 to 175 °C. The transistor has a turn-off time of 278ns and turn-on time of 168ns in a rectangular package with through-hole terminals.
278 ns
168 ns
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