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NGP15N41CLG

Onsemi

NGP15N41CLG by Onsemi

NGP15N41CLG by Onsemi is an N-CHANNEL IGBT with built-in diode and resistor, ideal for automotive ignition applications. It features a max collector-emitter voltage of 440V, collector current of 15A, and power dissipation of 107W. With rise time of 7000ns and fall time of 15000ns, it operates at temperatures up to 175 °C.

Median Price

$1.440

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20 parts In-Stock

1+ parts

-

100+ parts

$1.440

1k+ parts

$1.200

10k+ parts

$1.070

20

-

$1.440

$1.200

$1.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,055 parts In-Stock

1+ parts

$1.121

100+ parts

-

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2,055

$1.121

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Vyrian

USA . 2,114 parts In-Stock

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2,114

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Distributors (Availability)

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Corphita

USA . 786 parts In-Stock

1+ parts

$1.062

100+ parts

-

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-

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786

$1.062

-

-

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Corohmni

South Africa . 283 parts In-Stock

1+ parts

$1.180

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-

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283

$1.180

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AZTECH Wire

Italy . 443 parts In-Stock

1+ parts

$16.390

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443

$16.390

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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SupplyDigital Components

Austria . 4,394 parts In-Stock

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4,394

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Problanco Electronics

Mexico . 4,332 parts In-Stock

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4,332

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TANS Electronics

Latvia . 3,713 parts In-Stock

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3,713

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Kulean Microsystems

USA . 2,290 parts In-Stock

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2,290

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UHIMA Technologies

Türkiye . 680 parts In-Stock

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680

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Overview

Revolutionize your automotive ignition systems with the NGP15N41CLG Insulated Gate Bipolar Transistor by Onsemi. Designed with precision and quality in mind, this N-CHANNEL transistor offers unrivaled performance and reliability. Its single configuration with built-in diode and resistor makes installation a breeze. Perfect for a wide range of automotive applications, this transistor ensures optimal efficiency and power distribution. Trust Onsemi for cutting-edge technology that delivers superior results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it suitable for automotive applications where high temperatures and vibrations may be present.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors generally have lower on-state resistance and higher switching speeds compared to P-CHANNEL transistors, improving overall performance.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce component count, making the transistor more efficient and cost-effective for automotive ignition systems.

Maximum Power Dissipation (Abs): 107 W

With a high power dissipation rating, this transistor can handle high current loads and operate effectively in demanding automotive environments.

Maximum Collector-Emitter Voltage: 440 V

The high voltage rating ensures compatibility with a wide range of automotive ignition systems and allows for safe operation under varying conditions.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) NGP15N41CLG attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

Maximum Fall Time (tf):

15000 ns

Maximum Gate-Emitter Threshold Voltage:

2.1 V

Maximum Gate-Emitter Voltage:

15 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

7000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

15500 ns

Nominal Turn On Time (ton):

5700 ns

Trade Compliance

NGP15N41CLG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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