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SKW30N60FKSA1

Infineon Technologies

SKW30N60FKSA1 by Infineon Technologies

SKW30N60FKSA1 by Infineon is an N-CHANNEL IGBT with 600V VCE, 41A IC, and 78ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance up to 150°C.

Median Price

$5.975

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$5.975

1k+ parts

$5.350

10k+ parts

$5.025

6,000

-

$5.975

$5.350

$5.025

Rochester

USA . 6,000 parts In-Stock

1+ parts

-

100+ parts

$4.780

1k+ parts

$4.280

10k+ parts

$4.020

6,000

-

$4.780

$4.280

$4.020

Arrow

USA . 180 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$6.200

10k+ parts

-

180

-

-

$6.200

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 248 parts In-Stock

1+ parts

$5.064

100+ parts

-

1k+ parts

-

10k+ parts

-

248

$5.064

-

-

-

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$7.490

100+ parts

-

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-

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50

$7.490

-

-

-

Vyrian

USA . 8,587 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

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8,587

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 135 parts In-Stock

1+ parts

$0.680

100+ parts

-

1k+ parts

-

10k+ parts

-

135

$0.680

-

-

-

Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$1.332

100+ parts

$1.265

1k+ parts

$1.265

10k+ parts

-

450

$1.332

$1.265

$1.265

-

Corohmni

South Africa . 75 parts In-Stock

1+ parts

$1.753

100+ parts

-

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-

10k+ parts

-

75

$1.753

-

-

-

Modulus Dynamics

Lithuania . 867 parts In-Stock

1+ parts

$1.943

100+ parts

$1.865

1k+ parts

$1.788

10k+ parts

-

867

$1.943

$1.865

$1.788

-

Ampacity Inc.

Singapore . 180 parts In-Stock

1+ parts

$4.530

100+ parts

-

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-

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180

$4.530

-

-

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Semicontronic

India . 180 parts In-Stock

1+ parts

$4.530

100+ parts

$4.417

1k+ parts

$4.394

10k+ parts

-

180

$4.530

$4.417

$4.394

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Corphita

USA . 701 parts In-Stock

1+ parts

$4.797

100+ parts

-

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701

$4.797

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Continental Prestige Electronics

USA . 4,422 parts In-Stock

1+ parts

$7.490

100+ parts

-

1k+ parts

-

10k+ parts

$7.340

4,422

$7.490

-

-

$7.340

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$7.490

100+ parts

$7.116

1k+ parts

-

10k+ parts

$6.666

300

$7.490

$7.116

-

$6.666

AZTECH Wire

Italy . 386 parts In-Stock

1+ parts

$11.334

100+ parts

-

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386

$11.334

-

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Microchip USA

USA . 301 parts In-Stock

1+ parts

$20.988

100+ parts

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301

$20.988

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Argo Parts USA

USA . 2,678 parts In-Stock

1+ parts

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2,678

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Perfect Parts

USA . 1,075 parts In-Stock

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1,075

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Component Stockers USA

USA . 267 parts In-Stock

1+ parts

-

100+ parts

$6.110

1k+ parts

-

10k+ parts

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267

-

$6.110

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-

Overview

Unlock the power of efficient power control with the SKW30N60FKSA1 from Infineon Technologies. This Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and reliability, thanks to its manufacturer's reputation for excellence. Perfect for applications requiring reliable power control, this single configuration transistor with a built-in diode provides superior performance. With a maximum operating temperature of 150°C and a collector-emitter voltage of 600V, this transistor ensures optimal efficiency in a wide range of scenarios. Elevate your projects with the SKW30N60FKSA1 and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the components inside, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: N-CHANNEL

Enhances the efficiency and performance of the transistor in power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and provides added functionality with the built-in diode, making it a versatile choice for power control applications.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimized performance in managing power flow.

Package Shape: RECTANGULAR

Compact rectangular shape allows for efficient placement and mounting in various systems.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and soldering on circuit boards, making it user-friendly for assembly.

Maximum Operating Temperature: 150 °C

Can operate effectively in high temperature environments, providing reliable performance even in challenging conditions.

Maximum Collector-Emitter Voltage: 600 V

Offers high voltage tolerance, making it suitable for applications requiring high voltage switching.

Maximum Collector Current (IC): 41 A

Has a high collector current rating, enabling it to handle significant power loads.

Nominal Turn On Time (ton): 78 ns

Fast turn-on time allows for quick switching and response, improving overall efficiency in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SKW30N60FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

391 ns

Nominal Turn On Time (ton):

78 ns

Trade Compliance

SKW30N60FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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