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IGW50N60TP

Infineon Technologies

IGW50N60TP by Infineon Technologies

IGW50N60TP by Infineon Technologies is an N-CHANNEL IGBT transistor with a max VCEsat of 1.8V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 332ns and ton of 55ns. This transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for various industrial power systems.

Median Price

$8.760

Lifecycle Status

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Chip1Stop

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Digiode

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Vyrian

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Modulus Dynamics

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$0.558

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$0.535

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AZTECH Wire

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Corphita

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Overview

Unleash the power of Infineon Technologies with the IGW50N60TP Insulated Gate Bipolar Transistor. This high-quality N-channel transistor offers unparalleled performance in power control applications, boasting a maximum collector-emitter voltage of 600V and a maximum collector current of 80A. With a quick turn-on time of 55ns and low VCEsat of 1.8V, this transistor ensures efficiency and reliability in your designs. Trust in Infineon's expertise and innovation to take your projects to the next level with the IGW50N60TP.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and can withstand high temperatures, making it suitable for power control applications.

Configuration: SINGLE

Having a single configuration simplifies the setup and minimizes the chances of errors in the circuit design.

Maximum VCEsat: 1.8 V

Low VCEsat value indicates lower power loss and better efficiency in power control operations.

Nominal Turn Off Time (toff): 332 ns

Quick turn off time allows for faster switching which is crucial in power control applications to minimize switching losses.

Maximum Power Dissipation (Abs): 319.2 W

High power dissipation capability ensures the transistor can handle high power loads without overheating.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, this IGBT can operate in harsh environments without compromising performance.

Maximum Collector-Emitter Voltage: 600 V

High maximum voltage rating ensures the IGBT can handle high voltage applications with ease.

Maximum Collector Current (IC): 80 A

High collector current rating allows the device to handle large current loads without issues.

Maximum Gate-Emitter Threshold Voltage: 5.7 V

Low gate-emitter threshold voltage provides efficient gate control and reduces power losses during switching.

Nominal Turn On Time (ton): 55 ns

Quick turn on time allows for faster response in power control applications, increasing efficiency.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW50N60TP attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

5.7 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

332 ns

Nominal Turn On Time (ton):

55 ns

Maximum VCEsat:

1.8 V

Trade Compliance

IGW50N60TP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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