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IGW50N60TXK

Infineon Technologies

IGW50N60TXK by Infineon Technologies

IGW50N60TXK by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 600V and a max collector current of 100A. It has a nominal turn-off time of 396ns and a turn-on time of 60ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations at up to 175°C.

Median Price

$3.666

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$3.666

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500

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Vyrian

USA . 332 parts In-Stock

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332

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Digiode

USA . 180 parts In-Stock

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180

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 1,616 parts In-Stock

1+ parts

$0.328

100+ parts

$0.315

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$0.302

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Argo Parts USA

USA . 2,602 parts In-Stock

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$3.666

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Continental Prestige Electronics

USA . 1,216 parts In-Stock

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$3.666

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$3.593

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Netroflash

USA . 100 parts In-Stock

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$3.666

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AZTECH Wire

Italy . 750 parts In-Stock

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$9.120

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$9.120

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Ampacity Inc.

Singapore . 187 parts In-Stock

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$31.050

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Corphita

USA . 486 parts In-Stock

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Overview

Unlock the power of efficient power control with the IGW50N60TXK Insulated Gate Bipolar Transistor by Infineon Technologies. Designed with high-quality materials and advanced technology, this N-CHANNEL transistor offers reliable performance and durability. Ideal for a wide range of applications, this single configuration transistor provides fast turn-off and turn-on times, making it perfect for power control tasks. Experience the value and benefits of Infineon's superior products with the IGW50N60TXK.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs generally have lower conduction losses and higher efficiency compared to P-Channel, making it suitable for power control applications.

Configuration: SINGLE

Simplifies the circuit design and allows for easier integration into systems.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance and efficiency.

Package Shape: RECTANGULAR

Easy to handle and mount in various setups, enhancing versatility in applications.

Terminal Form: THROUGH-HOLE

Enables easy soldering and secure connection to PCBs, ensuring reliable electrical connections.

Nominal Turn Off Time (toff): 396 ns

Fast turn-off time allows for efficient switching operation and reduces power losses.

No. of Terminals: 3

Simple 3-terminal setup simplifies the circuit design and integration process.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides convenient mounting options for various applications.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows for reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating enables the handling of higher voltages, suitable for power control applications.

Transistor Element Material: SILICON

Silicon material ensures high performance and reliability in power control applications.

Maximum Collector Current (IC): 100 A

High collector current rating allows for handling high power loads, suitable for power control applications.

Terminal Position: SINGLE

Single terminal position simplifies the connection process and ensures proper polarity.

Case Connection: COLLECTOR

Case connection at the collector provides easy access and connection to the main power node.

Nominal Turn On Time (ton): 60 ns

Fast turn-on time enables quick response and efficient operation in power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW50N60TXK attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Additional Features:

FAST SWITCHING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

396 ns

Nominal Turn On Time (ton):

60 ns

Trade Compliance

IGW50N60TXK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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