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IXGH60N60C3D1

IXYS Corporation

IXGH60N60C3D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 380 W; Maximum Collector Current (IC): 75 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$9.762

Lifecycle Status

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8

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 148 parts In-Stock

1+ parts

$8.450

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$6.030

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$5.910

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148

$8.450

$6.030

$5.910

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Newark

USA . 510 parts In-Stock

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$15.180

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$9.280

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$8.500

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510

$15.180

$9.280

$8.500

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Verical

USA . 205 parts In-Stock

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$11.074

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$11.046

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205

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$11.074

$11.046

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TTI Europe

Germany . 30 parts In-Stock

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$7.093

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$7.093

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Nova Conductors

Japan . 200 parts In-Stock

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$8.385

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$8.385

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NAC Semi

USA . 180 parts In-Stock

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$15.450

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$14.260

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Vyrian

USA . 177 parts In-Stock

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IBS Electronics

USA . 60 parts In-Stock

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$18.934

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$18.639

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60

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$18.934

$18.639

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Distributors (Availability)

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Advanced Electronics

New Zealand . 450 parts In-Stock

1+ parts

$0.668

100+ parts

$0.608

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$0.548

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450

$0.668

$0.608

$0.548

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Andel Nordic

Denmark . 26 parts In-Stock

1+ parts

$1.740

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$1.670

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$1.670

26

$1.740

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$1.670

Ampacity Inc.

Singapore . 183 parts In-Stock

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$6.030

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$6.030

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Semicontronic

India . 183 parts In-Stock

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$6.030

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$5.879

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$5.849

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183

$6.030

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$5.849

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Aranea Global

USA . 50 parts In-Stock

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$8.217

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$7.889

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$8.217

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$7.889

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Continental Prestige Electronics

USA . 93 parts In-Stock

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$9.410

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$6.580

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93

$9.410

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Component Stockers USA

USA . 872 parts In-Stock

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$9.720

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$8.400

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$6.810

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872

$9.720

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Microchip USA

USA . 3,980 parts In-Stock

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$32.312

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iodParts Technologies Inc.

India . 13,888 parts In-Stock

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Argo Parts USA

USA . 3,669 parts In-Stock

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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Perfect Parts

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Authorized Procurement Solutions

USA . 60 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH60N60C3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Maximum Gate-Emitter Threshold Voltage:

5.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

198 ns

Nominal Turn On Time (ton):

54 ns

Maximum VCEsat:

2.5 V

Trade Compliance

IXGH60N60C3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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