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IXGH30N120B3D1

IXYS Corporation

IXGH30N120B3D1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 3.5 V;

Median Price

$15.075

Lifecycle Status

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5

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1k+

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Mouser Electronics

USA . 251 parts In-Stock

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$14.900

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$8.540

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251

$14.900

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$8.540

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DigiKey

USA . 976 parts In-Stock

1+ parts

$15.250

100+ parts

$9.357

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$7.974

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976

$15.250

$9.357

$7.974

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Distrelec

Netherlands . 137 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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$7.847

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$7.847

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Vyrian

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78

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Aztec Data Supply Inc.

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Corohmni

South Africa . 149 parts In-Stock

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$0.847

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$0.847

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Andel Nordic

Denmark . 1,200 parts In-Stock

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$3.397

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$3.261

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$3.261

1,200

$3.397

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$3.261

$3.261

AZTECH Wire

Italy . 426 parts In-Stock

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$7.251

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Continental Prestige Electronics

USA . 6,611 parts In-Stock

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$7.847

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$7.690

6,611

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Ampacity Inc.

Singapore . 78 parts In-Stock

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78

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Semicontronic

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$8.853

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$8.808

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78

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Component Stockers USA

USA . 616 parts In-Stock

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$10.600

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616

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Microchip USA

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Argo Parts USA

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Glotronic Ltd.

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Allen Electronics Distributors

USA . 300 parts In-Stock

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Perfect Parts

USA . 27 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH30N120B3D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

380 ns

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

580 ns

Nominal Turn Off Time (toff):

331 ns

Nominal Turn On Time (ton):

53 ns

Maximum VCEsat:

3.5 V

Trade Compliance

IXGH30N120B3D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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