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IXGH30N120C3H1

IXYS Corporation

IXGH30N120C3H1 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 48 A; Case Connection: COLLECTOR;

Median Price

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Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 500 parts In-Stock

1+ parts

$6.795

100+ parts

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1k+ parts

$6.523

10k+ parts

$6.523

500

$6.795

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$6.523

$6.523

Microchip USA

USA . 344 parts In-Stock

1+ parts

$26.207

100+ parts

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10k+ parts

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344

$26.207

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Component Stockers USA

USA . 1,582 parts In-Stock

1+ parts

$88.690

100+ parts

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1k+ parts

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10k+ parts

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1,582

$88.690

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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100+ parts

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1k+ parts

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2,500

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Perfect Parts

USA . 241 parts In-Stock

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100+ parts

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241

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXGH30N120C3H1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

415 ns

Nominal Turn On Time (ton):

60 ns

Trade Compliance

IXGH30N120C3H1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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