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FP15R12W1T4B3BOMA1

Infineon Technologies

FP15R12W1T4B3BOMA1 by Infineon Technologies

Infineon Technologies' FP15R12W1T4B3BOMA1 is a N-CHANNEL IGBT with 6 elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1200V and nominal turn off time of 495ns. Ideal for power control applications, this UL approved transistor features a rectangular package style with flange mount.

Median Price

$33.910

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 24 parts In-Stock

1+ parts

$33.800

100+ parts

$27.400

1k+ parts

-

10k+ parts

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24

$33.800

$27.400

-

-

DigiKey

USA . 33 parts In-Stock

1+ parts

$33.910

100+ parts

$22.817

1k+ parts

$22.025

10k+ parts

-

33

$33.910

$22.817

$22.025

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Farnell

UK . 63 parts In-Stock

1+ parts

$34.730

100+ parts

$26.190

1k+ parts

-

10k+ parts

-

63

$34.730

$26.190

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-

Newark

USA . 1 parts In-Stock

1+ parts

$34.930

100+ parts

$23.230

1k+ parts

$22.690

10k+ parts

-

1

$34.930

$23.230

$22.690

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Element14

Singapore . 63 parts In-Stock

1+ parts

$62.090

100+ parts

$48.560

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-

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63

$62.090

$48.560

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Rochester

USA . 199 parts In-Stock

1+ parts

-

100+ parts

$21.560

1k+ parts

$19.290

10k+ parts

$18.150

199

-

$21.560

$19.290

$18.150

Verical

USA . 199 parts In-Stock

1+ parts

-

100+ parts

$26.950

1k+ parts

$24.113

10k+ parts

$22.688

199

-

$26.950

$24.113

$22.688

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 950 parts In-Stock

1+ parts

$25.830

100+ parts

-

1k+ parts

-

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950

$25.830

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-

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$34.714

100+ parts

-

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-

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100

$34.714

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-

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Vyrian

USA . 5,721 parts In-Stock

1+ parts

-

100+ parts

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5,721

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TME

Poland . 17 parts In-Stock

1+ parts

-

100+ parts

$28.090

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-

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17

-

$28.090

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 18,102 parts In-Stock

1+ parts

$0.804

100+ parts

$0.772

1k+ parts

$0.740

10k+ parts

-

18,102

$0.804

$0.772

$0.740

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AZTECH Wire

Italy . 791 parts In-Stock

1+ parts

$9.823

100+ parts

-

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791

$9.823

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Ampacity Inc.

Singapore . 93 parts In-Stock

1+ parts

$23.110

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93

$23.110

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Corphita

USA . 876 parts In-Stock

1+ parts

$24.471

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876

$24.471

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Continental Prestige Electronics

USA . 12 parts In-Stock

1+ parts

$32.700

100+ parts

$30.900

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-

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12

$32.700

$30.900

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Netroflash

USA . 50 parts In-Stock

1+ parts

$34.714

100+ parts

-

1k+ parts

$32.978

10k+ parts

$32.284

50

$34.714

-

$32.978

$32.284

Andel Nordic

Denmark . 209 parts In-Stock

1+ parts

$39.940

100+ parts

-

1k+ parts

$27.961

10k+ parts

$27.961

209

$39.940

-

$27.961

$27.961

Microchip USA

USA . 9,453 parts In-Stock

1+ parts

$109.227

100+ parts

-

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9,453

$109.227

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QUARKTWIN TECHNOLOGY LTD

USA . 16,017 parts In-Stock

1+ parts

-

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16,017

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Argo Parts USA

USA . 2,129 parts In-Stock

1+ parts

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2,129

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Overview

Unlock the power of cutting-edge technology with the FP15R12W1T4B3BOMA1 by Infineon Technologies. This high-quality Insulated Gate Bipolar Transistor offers unparalleled performance and reliability, making it the perfect choice for power control applications. With its N-CHANNEL configuration, 6 elements, built-in diode, and thermistor, this transistor provides exceptional value and benefits to customers. Whether you're looking to optimize efficiency or enhance safety, the FP15R12W1T4B3BOMA1 is designed to meet your needs with ease. Trust in Infineon Technologies for superior solutions that elevate your projects to new heights.

Feature Benefit Bullets

Polarity/Channel Type:

N-CHANNEL - Provides efficient power control and high performance in various electronic applications.

Configuration:

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR - Offers advanced functionality and versatility for complex power control systems.

Transistor Application:

POWER CONTROL - Ideal for managing power flow and ensuring optimal performance in electronic devices.

Package Shape:

RECTANGULAR - Allows for easy integration into circuit boards and compact design for space-saving solutions.

No. of Elements:

6 - Provides flexibility and enhanced power handling capabilities in demanding applications.

Nominal Turn Off Time (toff):

495 ns - Ensures quick response and efficient power switching for improved performance.

No. of Terminals:

20 - Facilitates easy connections and secure mounting for reliable operation.

Package Style (Meter):

FLANGE MOUNT - Enables sturdy installation and heat dissipation for enhanced durability.

Maximum Collector-Emitter Voltage:

1200 V - Offers high voltage handling capacity for robust power control.

Transistor Element Material:

SILICON - Provides high reliability and stable operation in diverse environmental conditions.

Maximum Collector Current (IC):

28 A - Supports high current flow and efficient power management in demanding applications.

Terminal Position:

UPPER - Facilitates convenient wiring and secure connections in electronic circuits.

Case Connection:

ISOLATED - Ensures electrical insulation and protection for safe and reliable operation.

Nominal Turn On Time (ton):

120 ns - Enables fast power switching and precise control for optimized performance.

Reference Standard:

UL APPROVED - Meets rigorous safety and performance standards for reliable operation and peace of mind.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FP15R12W1T4B3BOMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JESD-30 Code:

R-XUFM-X20

No. of Elements:

6

No. of Terminals:

20

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Reference Standard:

UL APPROVED

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

495 ns

Nominal Turn On Time (ton):

120 ns

Trade Compliance

FP15R12W1T4B3BOMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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