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IKW25N120H3FKSA1

Infineon Technologies

IKW25N120H3FKSA1 by Infineon Technologies

IKW25N120H3FKSA1 by Infineon is an N-CHANNEL IGBT with 1200V VCE, 50A IC, and 397ns toff. Ideal for power control applications due to its single configuration with built-in diode. Package style is flange mount with through-hole terminals.

Median Price

$5.335

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 300 parts In-Stock

1+ parts

$5.260

100+ parts

$3.580

1k+ parts

$2.840

10k+ parts

-

300

$5.260

$3.580

$2.840

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Arrow

USA . 1,597 parts In-Stock

1+ parts

$5.410

100+ parts

$3.014

1k+ parts

-

10k+ parts

-

1,597

$5.410

$3.014

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Chip1Stop

Japan . 203 parts In-Stock

1+ parts

$5.850

100+ parts

$3.300

1k+ parts

-

10k+ parts

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203

$5.850

$3.300

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DigiKey

USA . 34 parts In-Stock

1+ parts

$5.930

100+ parts

$3.362

1k+ parts

$2.382

10k+ parts

$2.303

34

$5.930

$3.362

$2.382

$2.303

Newark

USA . 1,520 parts In-Stock

1+ parts

$6.000

100+ parts

$2.860

1k+ parts

$2.360

10k+ parts

-

1,520

$6.000

$2.860

$2.360

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Mouser Electronics

USA . 419 parts In-Stock

1+ parts

$6.950

100+ parts

$3.350

1k+ parts

$2.970

10k+ parts

$2.640

419

$6.950

$3.350

$2.970

$2.640

Element14

Singapore . 51 parts In-Stock

1+ parts

$9.880

100+ parts

$7.070

1k+ parts

$5.610

10k+ parts

-

51

$9.880

$7.070

$5.610

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Rochester

USA . 3,311 parts In-Stock

1+ parts

-

100+ parts

$2.310

1k+ parts

$2.070

10k+ parts

$1.940

3,311

-

$2.310

$2.070

$1.940

Verical

USA . 3,311 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.587

10k+ parts

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3,311

-

-

$2.587

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Avnet

USA . 126 parts In-Stock

1+ parts

-

100+ parts

$2.699

1k+ parts

$2.434

10k+ parts

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126

-

$2.699

$2.434

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RS (Exports)

UK . 104 parts In-Stock

1+ parts

-

100+ parts

$4.703

1k+ parts

$4.504

10k+ parts

-

104

-

$4.703

$4.504

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Future Electronics

Canada . 70 parts In-Stock

1+ parts

-

100+ parts

$4.020

1k+ parts

$3.910

10k+ parts

$3.810

70

-

$4.020

$3.910

$3.810

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 630 parts In-Stock

1+ parts

$2.888

100+ parts

-

1k+ parts

-

10k+ parts

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630

$2.888

-

-

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$5.081

100+ parts

-

1k+ parts

-

10k+ parts

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10

$5.081

-

-

-

TME

Poland . 63 parts In-Stock

1+ parts

$5.380

100+ parts

$3.370

1k+ parts

-

10k+ parts

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63

$5.380

$3.370

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-

Chip Stock

USA . 13,820 parts In-Stock

1+ parts

-

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13,820

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-

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Vyrian

USA . 2,633 parts In-Stock

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2,633

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NAC Semi

USA . 720 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.950

10k+ parts

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720

-

-

$4.950

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Zilex Electronics Inc.

Canada . 480 parts In-Stock

1+ parts

-

100+ parts

-

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480

-

-

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Rutronik

Germany . 210 parts In-Stock

1+ parts

-

100+ parts

$2.700

1k+ parts

$2.440

10k+ parts

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210

-

$2.700

$2.440

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Sensible Micro Corp

USA . 152 parts In-Stock

1+ parts

-

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152

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IBS Electronics

USA . 107 parts In-Stock

1+ parts

-

100+ parts

$5.610

1k+ parts

$3.618

10k+ parts

-

107

-

$5.610

$3.618

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 7,830 parts In-Stock

1+ parts

$0.330

100+ parts

-

1k+ parts

-

10k+ parts

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7,830

$0.330

-

-

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.659

100+ parts

$0.626

1k+ parts

$0.626

10k+ parts

-

2,000

$0.659

$0.626

$0.626

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Corohmni

South Africa . 277 parts In-Stock

1+ parts

$0.743

100+ parts

-

1k+ parts

-

10k+ parts

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277

$0.743

-

-

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Modulus Dynamics

Lithuania . 16,351 parts In-Stock

1+ parts

$1.277

100+ parts

$1.226

1k+ parts

$1.175

10k+ parts

-

16,351

$1.277

$1.226

$1.175

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Semicontronic

India . 3,056 parts In-Stock

1+ parts

$2.580

100+ parts

$2.516

1k+ parts

$2.503

10k+ parts

-

3,056

$2.580

$2.516

$2.503

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Ampacity Inc.

Singapore . 2,982 parts In-Stock

1+ parts

$2.580

100+ parts

-

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2,982

$2.580

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Corphita

USA . 74 parts In-Stock

1+ parts

$2.736

100+ parts

-

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74

$2.736

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Bastille Electronics

Australia . 50 parts In-Stock

1+ parts

$5.081

100+ parts

$4.827

1k+ parts

$4.586

10k+ parts

$4.522

50

$5.081

$4.827

$4.586

$4.522

Continental Prestige Electronics

USA . 887 parts In-Stock

1+ parts

$7.160

100+ parts

$4.210

1k+ parts

-

10k+ parts

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887

$7.160

$4.210

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Microchip USA

USA . 2,806 parts In-Stock

1+ parts

$22.260

100+ parts

-

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10k+ parts

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2,806

$22.260

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Robosynatics

Brazil . 14,814 parts In-Stock

1+ parts

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100+ parts

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14,814

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-

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Lucentia Tech

USA . 14,814 parts In-Stock

1+ parts

-

100+ parts

$1.288

1k+ parts

$1.261

10k+ parts

$1.261

14,814

-

$1.288

$1.261

$1.261

Formix International (Excess)

India . 7,760 parts In-Stock

1+ parts

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100+ parts

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7,760

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Infinite Electronics LLP (Excess)

. 7,385 parts In-Stock

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7,385

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Argo Parts USA

USA . 404 parts In-Stock

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404

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Eastek

USA . 240 parts In-Stock

1+ parts

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100+ parts

$6.770

1k+ parts

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240

-

$6.770

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iodParts Technologies Inc.

India . 215 parts In-Stock

1+ parts

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215

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Overview

Elevate your power control applications with the IKW25N120H3FKSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies guarantees top-notch quality and reliability. This insulated gate bipolar transistor (IGBT) offers seamless power control with its N-CHANNEL configuration and built-in diode, making it ideal for a wide range of applications. With a maximum collector-emitter voltage of 1200V and a nominal turn off time of 397ns, this IGBT ensures efficient performance and durability. Trust Infineon Technologies to deliver exceptional value and benefits with the IKW25N120H3FKSA1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this IGBT lightweight and cost-effective, without compromising on durability.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs offer better performance and efficiency compared to P-channel types, making this product a superior choice for power control applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and reduces the need for additional components, making this IGBT more convenient to use.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, this IGBT ensures reliable and efficient performance in controlling high power loads.

Package Shape: RECTANGULAR

The rectangular shape of this IGBT allows for easy mounting and placement in electronic circuits, making it user-friendly for installation.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides a secure and stable connection, ensuring consistent performance and reliability in power control applications.

No. of Elements: 1

With a single element design, this IGBT simplifies circuit design and reduces the risk of component failures, enhancing the overall reliability of the system.

Nominal Turn Off Time (toff): 397 ns

The fast turn-off time of 397 ns enables quick and precise control of power output, enhancing the efficiency and performance of the system.

No. of Terminals: 3

Having 3 terminals allows for a straightforward connection setup, reducing the chances of errors during installation and improving the overall usability of the IGBT.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides mechanical stability and heat dissipation, ensuring optimal performance and longevity of the IGBT.

Maximum Operating Temperature: 175 °C

With a maximum operating temperature of 175°C, this IGBT can withstand high temperatures, offering reliable operation in a wide range of environments.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage of 1200V allows this IGBT to handle high power loads and voltages, making it suitable for demanding power control applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability and performance, making this IGBT a durable and long-lasting choice for power control.

Maximum Collector Current (IC): 50 A

With a maximum collector current of 50A, this IGBT is capable of handling high current loads, making it suitable for a wide range of power control applications.

Terminal Finish: TIN

The tin terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable connections and long-term performance of the IGBT.

Terminal Position: SINGLE

The single terminal position simplifies installation and reduces the risk of wiring errors, making this IGBT easier to use for power control applications.

Nominal Turn On Time (ton): 61 ns

The fast turn-on time of 61 ns enables quick response and precise control of power output, enhancing the overall efficiency and performance of the system.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKW25N120H3FKSA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

397 ns

Nominal Turn On Time (ton):

61 ns

Trade Compliance

IKW25N120H3FKSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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