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IXDR35N60BD1

Littelfuse

IXDR35N60BD1 by Littelfuse

IXDR35N60BD1 by Littelfuse is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 38A max collector current, and 390ns turn off time. Ideal for power control applications due to its single configuration with built-in diode and isolated case connection.

Median Price

$12.317

Lifecycle Status

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Nova Conductors

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$2.868

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Ozdisan Elektronik

Türkiye . 67 parts In-Stock

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$12.317

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Vyrian

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NAC Semi

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$20.510

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Continental Prestige Electronics

USA . 3,746 parts In-Stock

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$2.868

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$2.811

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Argo Parts USA

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966

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Netroflash

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Component Stockers USA

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$6.820

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Semicontronic

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$7.050

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$6.874

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$6.838

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AZTECH Wire

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$11.425

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Overview

Enhance your power control applications with the IXDR35N60BD1 by Littelfuse. As a leading manufacturer in the industry, Littelfuse delivers top-quality Insulated Gate Bipolar Transistors (IGBT) designed for reliability and performance. With a single configuration and built-in diode, this product offers seamless integration and efficient power control. Whether you're looking to optimize industrial machinery or enhance renewable energy systems, the IXDR35N60BD1 provides value, benefits, and advantages that will elevate your projects to new heights. Experience the difference with Littelfuse.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower ON-state resistance, higher switching speed, and better efficiency compared to P-channel IGBTs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient commutation and ensures smooth operation.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, making it a suitable choice for high-power devices.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into different systems.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections for the device.

Nominal Turn Off Time (toff): 390 ns

Fast turn-off time helps in controlling power flow and minimizing losses during switching.

No. of Terminals: 3

Simple three-terminal design makes it easy to interface with external circuits.

Package Style (Meter): IN-LINE

In-line package style ensures easy installation and connection with other components.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, making it suitable for industrial applications.

Maximum Collector-Emitter Voltage: 600 V

High voltage rating allows for handling of large voltage levels, making it suitable for power control applications.

Transistor Element Material: SILICON

Silicon material ensures high efficiency and reliability in power control applications.

Maximum Collector Current (IC): 38 A

High collector current rating allows for handling of large currents, making it suitable for high-power applications.

Terminal Finish: TIN SILVER COPPER

High-quality terminal finish ensures good conductivity and durability of connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection with external circuits.

Case Connection: ISOLATED

Isolated case connection ensures safety and protection against electrical hazards.

Nominal Turn On Time (ton): 75 ns

Fast turn-on time helps in achieving quick response and efficient power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDR35N60BD1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

HIGH SPEED

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

390 ns

Nominal Turn On Time (ton):

75 ns

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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