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IXDR30N120D1

Littelfuse

IXDR30N120D1 by Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; Transistor Element Material: SILICON;

Median Price

$10.630

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 37 parts In-Stock

1+ parts

$8.110

100+ parts

$5.370

1k+ parts

$4.790

10k+ parts

-

37

$8.110

$5.370

$4.790

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Newark

USA . 37 parts In-Stock

1+ parts

$10.630

100+ parts

$7.870

1k+ parts

$6.590

10k+ parts

-

37

$10.630

$7.870

$6.590

-

Element14

Singapore . 37 parts In-Stock

1+ parts

$14.420

100+ parts

$10.300

1k+ parts

-

10k+ parts

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37

$14.420

$10.300

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-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 900 parts In-Stock

1+ parts

-

100+ parts

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900

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 8,613 parts In-Stock

1+ parts

$36.232

100+ parts

-

1k+ parts

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10k+ parts

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8,613

$36.232

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Ampacity Inc.

Singapore . 1,484 parts In-Stock

1+ parts

$60.050

100+ parts

-

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10k+ parts

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1,484

$60.050

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

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100+ parts

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2,000

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-

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Continental Prestige Electronics

USA . 1,693 parts In-Stock

1+ parts

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1,693

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Perfect Parts

USA . 1,120 parts In-Stock

1+ parts

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1,120

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

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Argo Parts USA

USA . 543 parts In-Stock

1+ parts

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543

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IXDR30N120D1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Littelfuse

Specs

Additional Features:

HIGH SPEED SWITCHING, LOW SWITCHING LOSS, FAST RECOVERY

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

570 ns

Nominal Turn On Time (ton):

170 ns

Trade Compliance

IXDR30N120D1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Littelfuse

Littelfuse is a diversified industrial technology manufacturing company empowering a sustainable, connected, and safer world. Across more than 20 countries, and with approximately 18,000 global associates, we partner with customers to design and deliver innovative, reliable solutions. Serving over 100,000 end customers, our products are found in a variety of industrial, transportation, and electronics end markets—everywhere, every day. Headquartered in Chicago, Illinois, United States, Littelfuse was founded in 1927.

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