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SK15DGDL126ET

Semikron International

SK15DGDL126ET by Semikron International

SK15DGDL126ET by Semikron International is an N-CHANNEL IGBT with 1200V VCEsat, 22A IC, and 475ns toff. Ideal for POWER CONTROL applications due to its complex configuration and SILICON material. Package style is FLANGE MOUNT with 23 terminals and operates up to 150°C.

Median Price

$135.840

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Nova Conductors

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AZTECH Wire

Italy . 341 parts In-Stock

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Continental Prestige Electronics

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$86.171

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Argo Parts USA

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Overview

Unleash the power of cutting-edge technology with the SK15DGDL126ET by Semikron International. As a leading manufacturer in the industry, Semikron International ensures top-quality products that deliver superior performance and reliability. Ideal for power control applications, this Insulated Gate Bipolar Transistor offers unmatched value and benefits. With a maximum VCEsat of 2.1V and a maximum collector-emitter voltage of 1200V, this complex N-channel transistor provides efficient power management. Experience seamless operation and enhanced functionality with the SK15DGDL126ET - your ultimate solution for all power control needs.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-CHANNEL IGBTs are known for their higher efficiency and reliability compared to P-CHANNEL IGBTs, making this product a good choice for power control applications.

Maximum VCEsat: 2.1 V

A low VCEsat value indicates lower power losses during operation, resulting in higher efficiency and better performance for power control applications.

Maximum Collector-Emitter Voltage: 1200 V

With a high maximum collector-emitter voltage, this IGBT can handle high voltage levels, making it suitable for power control applications requiring high voltage handling capabilities.

Maximum Collector Current (IC): 22 A

This IGBT has a high maximum collector current rating, allowing it to handle higher current levels, making it suitable for power control applications requiring high current handling capabilities.

Nominal Turn Off Time (toff): 475 ns

The low turn-off time of this IGBT indicates fast switching speeds, which is beneficial for applications requiring quick response times and efficient power control.

Maximum Gate-Emitter Voltage: 20 V

The maximum gate-emitter voltage of 20 V ensures reliable and safe operation of the IGBT, making it suitable for power control applications where stable gate control is essential.

Reference Standard: IEC-60747-1; UL RECOGNIZED

Compliance with industry standards such as IEC-60747-1 and UL recognition ensures that the product meets quality and safety requirements, making it a reliable choice for power control applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) SK15DGDL126ET attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Semikron International

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X23

JESD-609 Code:

e3/e4

No. of Elements:

7

No. of Terminals:

23

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Reference Standard:

IEC-60747-1; UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN/SILVER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

475 ns

Nominal Turn On Time (ton):

50 ns

Maximum VCEsat:

2.1 V

Trade Compliance

SK15DGDL126ET Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Semikron International

Semikron Danfoss is a family-owned business, merged by SEMIKRON and Danfoss Silicon Power in 2022. In a world that is going electric, Semikron Danfoss technologies are more relevant than ever. With our innovative solutions for automotive, industrial and renewable applications we help the world utilize energy more efficiently and sustainable and thus to significantly reduce overall CO2 emissions – one of the biggest challenges the world faces today. Our power electronics product offerings include semiconductor devices, power modules, stacks and systems. We take care of our employees and create value for our customers by investing significantly in innovation, technology, capacity, and service to deliver best-in-industry performance and for a sustainable future.

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