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7MBR150VR120-50

Fuji Electric

7MBR150VR120-50 by Fuji Electric

Fuji Electric's 7MBR150VR120-50 is an N-CHANNEL IGBT with 150A IC, 1200V VCE, and 885W power dissipation. Ideal for POWER CONTROL applications due to its fast ton of 390ns and low VCEsat of 2.95V, making it suitable for high-power systems requiring efficient switching capabilities.

Median Price

$243.147

Lifecycle Status

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4

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1k+

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Forefront Electronics and Design

USA . 1 parts In-Stock

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$196.000

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Ozdisan Elektronik

Türkiye . 94 parts In-Stock

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$290.294

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Vyrian

USA . 4,110 parts In-Stock

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Nova Conductors

Japan . 68 parts In-Stock

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AZTECH Wire

Italy . 200 parts In-Stock

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$16.475

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Continental Prestige Electronics

USA . 5,451 parts In-Stock

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Argo Parts USA

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Perfect Parts

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GreenTree Electronics

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Bastille Electronics

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Overview

Discover the power of the 7MBR150VR120-50 by Fuji Electric, a top-quality Insulated Gate Bipolar Transistor that delivers unrivaled performance in power control applications. With a maximum collector current of 150A and a collector-emitter voltage of 1200V, this complex N-CHANNEL transistor offers superior reliability and efficiency. From industrial machinery to renewable energy systems, this product is designed to meet the demands of various applications, ensuring optimal performance and durability. Experience the value and benefits of Fuji Electric's cutting-edge technology with the 7MBR150VR120-50.

Feature Benefit Bullets

Polarity or Channel Type

N-channel IGBTs are known for their high efficiency and fast switching speed, making them suitable for power control applications.

Configuration

Complex configuration enhances the performance and efficiency of the IGBT, making it suitable for various power control applications.

Maximum Power Dissipation (Abs)

High power dissipation capability allows the IGBT to handle large power loads effectively without overheating.

Maximum Collector-Emitter Voltage

High maximum voltage rating makes this IGBT suitable for high power applications where voltage spikes may occur.

Maximum Collector Current (IC)

High collector current rating allows the IGBT to handle large current loads, making it suitable for power control applications.

Nominal Turn Off Time (toff)

Fast turn-off time ensures efficient switching and control of power, enhancing overall performance.

Nominal Turn On Time (ton)

Fast turn-on time ensures quick responsiveness and efficient power control, making this IGBT ideal for high-speed applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) 7MBR150VR120-50 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Fuji Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X21

No. of Elements:

7

No. of Terminals:

21

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

530 ns

Nominal Turn On Time (ton):

390 ns

Maximum VCEsat:

2.95 V

Trade Compliance

7MBR150VR120-50 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Fuji Electric

Fuji Electric has been supporting industrial and social infrastructure by extensively developing power semiconductor and power electronics solutions as core technologies. In addition, we are now working to realize a responsible and sustainable society through our energy and environment business by offering renewable energy solutions, as well as power stabilization, energy saving, and automation solutions, in order to help achieve the worldwide goal of a decarbonized society. Fuji Electric’s strength is its ability to independently develop and manufacture power semiconductors as key energy-saving devices. We utilize these devices in our power electronics equipment and offer customers comprehensive engineering services that integrate these products. By leveraging our strengths, we are contributing to the realization of the worldwide goal of a decarbonized society.

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